Zobrazeno 1 - 10
of 31
pro vyhledávání: '"M.P. Zaitlin"'
Publikováno v:
Journal of Crystal Growth. :1-7
In the last decade pseudomorphic high electron mobility transistors (PHEMTs) have gone from a laboratory curiosity with unique low-noise performance to a high-volume commercial product for a variety of power and low-noise applications. At Raytheon Mi
Autor:
M.P. Zaitlin, M.G. Adlerstein
Publikováno v:
IEEE Transactions on Electron Devices. 38:1553-1554
A method for the measurement of the thermal resistance of heterojunction bipolar transistors (HBTs) has been developed. The measurement technique is described and its application is illustrated. Results for single-emitter HBTs are explained with the
Autor:
M.P. Zaitlin
Publikováno v:
Solid State Communications. 41:317-320
The discontinuity in the heat capacity of a clean NS bilayer is calculated using solutions to the Bugoliubov equation. For a superconductor thickness of a coherence length or less Δ C is proportional to the square of the fractional volume of superco
Autor:
M.P. Zaitlin
Publikováno v:
Physical Review B. 18:3305-3312
The thermal conductivity of Pb-Cd lamellar eutectic composites was measured as a function of the applied magnetic field from 1 to 8 K. The directions of heat flow and magnetic field were parallel to each other and to the lamellae. For samples of larg
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 36:1902-1907
A 14 to 37-GHz monolithic microwave integrated-circuit (MMIC) distributed-power amplifier is described that has three FETs (field-effect transistors) of varying periphery, all capacitively coupled to the gate line. The capacitor is inserted between t
Autor:
M.P. Zaitlin
Publikováno v:
IEEE Transactions on Electron Devices. 33:1635-1639
A simple numerical technique for calculating reverse breakdown voltage in GaAs MESFET's is described. The breakdown voltage is determined from an integral over the ionization rate and requires only a small amount of computing time, allowing a variety
Autor:
M.P. Zaitlin, P. Lamarre
Publikováno v:
IEEE Transactions on Electron Devices. 35:2422-2424
The technique uses a double layer of standard polymethyl methacrylate (PMMA) electron resist and a sensitive copolymer of PMMA. With this technique, the width of the recess (and hence the gate edge to n/sup +/ layer distance d/sub c/) can be controll
Autor:
M.P. Zaitlin
The ac magnetic susceptibility of the Nb-Th eutectic composites in a dc magnetic field showed the existence of a mixed state in the thorium matrix material even in large fields of several kilogauss. This mixed state persisted until nearly the field a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6369ba15ad1ad80dbcae883cc37078fc
https://doi.org/10.2172/6518157
https://doi.org/10.2172/6518157
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