Zobrazeno 1 - 10
of 67
pro vyhledávání: '"M.P. Villar"'
Publikováno v:
Diamond and Related Materials. 134:109802
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::511c366ee56060a06ecbf4526ee10dc2
https://doi.org/10.1016/j.diamond.2023.109802
https://doi.org/10.1016/j.diamond.2023.109802
Akademický článek
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Akademický článek
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Autor:
M.P. Villar, Tokuyuki Teraji, Jose Carlos Piñero, Daniel Araujo, Alexandre Fiori, David Eon, Aboulaye Traore, Pierre Muret, Julien Pernot
Publikováno v:
Applied Surface Science
Applied Surface Science, Elsevier, 2017, 395, pp.200-207. ⟨10.1016/j.apsusc.2016.04.166⟩
Applied Surface Science, Elsevier, 2017, 395, pp.200-207. ⟨10.1016/j.apsusc.2016.04.166⟩
Electrical and nano-structural properties of Zr and WC-based Schottky power diodes are compared and used for investigating oxide-related effects at the diamond/metal interface. Differences in Schottky barrier heights and ideality factors of both stru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f92396d213b80ec4389fdb7538d3f640
https://doi.org/10.1016/j.apsusc.2016.04.166
https://doi.org/10.1016/j.apsusc.2016.04.166
Publikováno v:
Appl. Phys. Lett. 118, 052108 (2021)
Doping diamond layers for electronic applications has become straightforward during the last two decades. However, dislocation generation in diamond during the microwave plasma enhanced chemical vapor deposition growth process is still not fully unde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e1cdcf4743c271373776db923eb3ee4b
https://doi.org/10.1063/5.0031476
https://doi.org/10.1063/5.0031476
Publikováno v:
physica status solidi (a). 213:2570-2574
Selective diamond growth on etched diamond substrates allows the development of 3D-type device geometries, which can make possible higher capacity, higher surface for contacts and benefits from better properties versus growth orientation. Such struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89c5e0029c11a12e9aef324236c7ab7e
https://doi.org/10.1002/pssa.201600182
https://doi.org/10.1002/pssa.201600182
Autor:
Alexandre Fiori, Etienne Bustarret, M. P. Alegre, Fernando Lloret, Daniel Araujo, M.P. Villar, Jose Carlos Piñero
Publikováno v:
Applied Surface Science
Applied Surface Science, Elsevier, 2018, 461, pp.221-226. ⟨10.1016/j.apsusc.2018.07.097⟩
Applied Surface Science, Elsevier, 2018, 461, pp.221-226. ⟨10.1016/j.apsusc.2018.07.097⟩
Ultimate spatial resolution in boron δ-doped homoepitaxial diamond interfaces has been achieved by diffraction contrast technique in Transmission Electron Microscopy. The combination of two reflections with the Howie-Whelan equations allows profilin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::95cb7657f5b37f9dfe74d641b5d15eb7
https://hal.archives-ouvertes.fr/hal-02019750
https://hal.archives-ouvertes.fr/hal-02019750
Autor:
Fernando Lloret, Daniel Araujo, J.M. González-Leal, David Eon, M.P. Villar, Etienne Bustarret, M. P. Alegre
Publikováno v:
physica status solidi (a). 212:2468-2473
Heavy boron-doping layer in diamond can be responsible for the generation of extended defects during the growth processes (Blank et al., Diam. Relat. Mater. 17, 1840 (2008) [1]). As claimed recently (Alegre et al., Appl. Phys. Lett. 105, 173103 (2014
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85336d6643800c866f3adcaba12f2384
https://doi.org/10.1002/pssa.201532175
https://doi.org/10.1002/pssa.201532175
Publikováno v:
Materials Science Forum
Si nanowires (NWs) samples have been converted to silicon carbide (SiC) NWs at different conditions of substrate temperature in an ultra-high vacuum using a molecular beam epitaxy (MBE) set-up. Auger electron spectroscopy (AES) and reflection high-en
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ea969ba49749b97275c740aa6fa4010c
https://doi.org/10.4028/www.scientific.net/msf.821-823.965
https://doi.org/10.4028/www.scientific.net/msf.821-823.965
Autor:
M.P. Villar, Jose Carlos Piñero, Gauthier Chicot, Aboulaye Traore, Daniel Araujo, M. P. Alegre, Aurélien Maréchal, Pierre Muret, Julien Pernot
Publikováno v:
physica status solidi (a). 211:2367-2371
Metal and oxide distribution in diamond metal–oxide–semiconductor (MOS) structures are characterized using several transmission electron microscopy (TEM) modes at nanometric scale. To understand their electrical behavior, oxygen distribution usin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60571f215af5075a680d4621bf441569
https://doi.org/10.1002/pssa.201431178
https://doi.org/10.1002/pssa.201431178