Zobrazeno 1 - 10
of 68
pro vyhledávání: '"M.O. Vassell"'
The small-signal response of 1.5 mu m multiple-quantum-well lasers in a two-band-model approximation
Autor:
J. Lee, M.O. Vassell
Publikováno v:
IEEE Journal of Quantum Electronics. 28:624-634
The variation of the small-signal response of 1.5 mu m unstrained multiple quantum-well lasers with the number of wells (N/sub W/) is studied theoretically in a two-band-model (TB) approximation. The quasi-Fermi energies, together with gain and spont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f4ea8986a6eaafc51fa62f591607324
https://doi.org/10.1109/3.124986
https://doi.org/10.1109/3.124986
Publikováno v:
LEOS '92 Conference Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4c785d5e1ea4ea8954dcb94a0fcdac1
https://doi.org/10.1109/leos.1992.693827
https://doi.org/10.1109/leos.1992.693827
Autor:
J. Lee, M.O. Vassell
Publikováno v:
IEEE Photonics Technology Letters. 4:1222-1224
The variations of energy-band-diagrams with forward bias voltages for step separate-confinement-heterostructure single quantum-well lasers are investigated by numerically solving the semiconductor device equations with two band parameters described b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6e65ea534fd13ee0278be3b0820c126
https://doi.org/10.1109/68.166949
https://doi.org/10.1109/68.166949
Autor:
M.O. Vassell, A.K. Ganguly
Publikováno v:
IEEE Transactions on Electron Devices. 18:66-69
A closed form expression is obtained for the electric field distribution that results when a voltage is impressed on a system of surface wave interdigital electrodes. The conventional assumptions of weak piezoelectric coupling and of electrodes long
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68a798c9a3ae7b3d29bb5a641ce1db3f
https://doi.org/10.1109/t-ed.1971.17145
https://doi.org/10.1109/t-ed.1971.17145
Autor:
E.M. Conwell, M.O. Vassell
Publikováno v:
IEEE Transactions on Electron Devices. :22-27
Use of the drifted Maxwellian distribution is shown to be unjustified for GaAs samples in which the Gunn effect is usually observed, because the carrier concentration is much too low for electron-electron collisions to predominate. It is pointed out
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e52371327b4630652a4f732c70e1812
https://doi.org/10.1109/t-ed.1966.15630
https://doi.org/10.1109/t-ed.1966.15630
Autor:
E.M. Conwell, M.O. Vassell
Publikováno v:
Physics Letters A. 25:302-303
Incorporation of nonparabolicity of the (100) valley into our calculations of drift velocity versus field in GaAs has raised the beginning of the negative differential mobility region from 2.1 to 2.9 kV/cm and the valley field from 10 to 12 kV/cm for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc2e84398be43b5481f9873ae29c78f1
https://doi.org/10.1016/0375-9601(67)90662-7
https://doi.org/10.1016/0375-9601(67)90662-7
Autor:
L.L. Hope, M.O. Vassell
Publikováno v:
Physics Letters A. 31:256-257
The amplification, compression, and steepening of a light pulse due to stimulated two-photon emission has been calculated. For reasonable parameter values significant pulse compression is predicted, but the singular behavior reported by Letokhov is n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::157087593cb2c06b8d7840a471a340e1
https://doi.org/10.1016/0375-9601(70)90959-x
https://doi.org/10.1016/0375-9601(70)90959-x
Autor:
E.M. Conwell, M.O. Vassell
Publikováno v:
IEEE Transactions on Electron Devices. 12:503-503
Distributions functions for fields of 2400 and 6000 V/cm in GaAs are obtained by solving the Boltzmann equation. Different values of the coupling constant for intervalley scattering are found to give quite different distributions.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e546a0b2d305c8e4f4ffcce3d316d8be
https://doi.org/10.1109/t-ed.1965.15543
https://doi.org/10.1109/t-ed.1965.15543
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