Zobrazeno 1 - 10
of 166
pro vyhledávání: '"M.O. Ruault"'
Autor:
Sandrine Miro, E. Bordas, M.O. Ruault, S. Pellegrino, Yves Serruys, S. Vaubaillon, S. Henry, P. Trocellier, O. Kaïtasov
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
14th International Conference on Radiation Effects in Insulators (REI-14)
14th International Conference on Radiation Effects in Insulators (REI-14), Aug 2007, Caen, France. pp.3178-3181, ⟨10.1016/j.nimb.2008.03.224⟩
14th International Conference on Radiation Effects in Insulators (REI-14)
14th International Conference on Radiation Effects in Insulators (REI-14), Aug 2007, Caen, France. pp.3178-3181, ⟨10.1016/j.nimb.2008.03.224⟩
Multiple ion beam facilities have been used for nearly 30 years to simulate the irradiation effects of neutrons on relevant nuclear materials. Simultaneous ion beam irradiation allow the study of structural damage and foreign atoms accumulation in a
Autor:
M.O. Ruault, P. Trocelier, S. Pellegrino, Nicolas Chauvin, Yves Serruys, Franck Fortuna, H. Flocard, S. Henry, P. Pariset, O. Kaïtasov
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 261:34-39
JANNuS (Joint Accelerators for Nano-Science and Nuclear Simulation) will be a unique user facility in Europe dedicated to material modification by ion beam implantation and irradiation. The main originality of the project is that it will be possible
Autor:
C.L. Liu, E. Ntsoenzok, Marie France Barthe, P. Desgardin, S. Ashok, A. Vengurlekar, Daniel Alquier, M.O. Ruault
Publikováno v:
Solid State Phenomena. :307-312
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 184:383-390
In fluoroapatite, the α-annealing is a crystal recovery process due to the electronic energy loss of α-particles emitted by radionuclides. This effect, which can be accompanied by a thermal recovery, is accounting for the crystalline state of natur
Publikováno v:
Semiconductors. 35:1182-1186
Twenty-five kiloelectronvolt Si+ ions with doses of (1–4)×1016 cm−2 and 13-keV N+ ions with doses of (0.2–2)×1016 cm−2 were implanted into SiO2 layers, which were then annealed at 900–1100°C to form luminescent silicon nanoprecipitates.
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 178:327-330
The experimentally observed kinetics of CoSi2 precipitate nucleation in Si during Co implantation are compared with the predictions of an analytical model that includes the coupling between absorption/desorption of impurity atoms at the precipitate s
Publikováno v:
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2011, 84, pp.144118. ⟨10.1103/PhysRevB.84.144118⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2011, 84, pp.144118. ⟨10.1103/PhysRevB.84.144118⟩
We report a synergy effect on the microstructural development of silicon specimens as a result of dual-beam high temperature irradiation/implantation. In situ transmission electron microscopy experiments using two different experimental setups have b
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Nuclear Instruments and Methods in Physics Research B
International Conference on Ion Beam Modification of Materials 8
International Conference on Ion Beam Modification of Materials 8, Sep 1992, Heidelberg, Germany. pp.386-389
Nuclear Instruments and Methods in Physics Research B
International Conference on Ion Beam Modification of Materials 8
International Conference on Ion Beam Modification of Materials 8, Sep 1992, Heidelberg, Germany. pp.386-389
Phase modifications induced at low temperature (T ≤ 40 K) in Al3Ti by ion irradiation were investigated by in situ transmission electron microscopy (TEM). Irradiation with heavy ions induces a complete amorphization at a dose of approximately 1 dpa
Autor:
Sophie Collin, F. Fotuna, M.O. Ruault, Erwan Oliviero, Esidor Ntsoenzok, O. Kaïtasov, B. Décamps
Publikováno v:
Microporous and Mesoporous Materials
Microporous and Mesoporous Materials, Elsevier, 2010, 132, pp.163-173. ⟨10.1016/j.micromeso.2010.02.015⟩
Microporous and Mesoporous Materials, Elsevier, 2010, 132, pp.163-173. ⟨10.1016/j.micromeso.2010.02.015⟩
Thermally grown amorphous SiO2 was implanted at room temperature with heavy noble gases Kr and Xe in order to create cavities in the oxide and increase its porosity. The implantation energies were chosen in order to have the same implantation depth f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7c1b20ff61483a609999a54ef61e68d1
http://hal.in2p3.fr/in2p3-00660814
http://hal.in2p3.fr/in2p3-00660814
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 1992, 63, pp.41-46
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 1992, 63, pp.41-46
Phosphorus implantation was performed on single-crystal samples of [111] CdTe at incident energies of 50, 100 and 200 keV, with fluences up to 4×1016 P cm 2 . All implants were done at room temperature with current densities below 0.2 μA/cm2. In or