Zobrazeno 1 - 10
of 42
pro vyhledávání: '"M.N. Semeria"'
Publikováno v:
Thin Solid Films. :106-109
Gas immersion laser doping (GILD) is a very attractive technique to realize the ultra-shallow and highly doped junctions required by the International Technology Roadmap for Semiconductors (ITRS) for future CMOS technologies. In the present work, gas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b759b2ee7df4e61115fa464cf6409dbf
https://doi.org/10.1016/j.tsf.2003.11.151
https://doi.org/10.1016/j.tsf.2003.11.151
Autor:
D. Zahorski, Dominique Débarre, T. Sarnet, J. Venturini, J. Boulmer, C. Laviron, M.N. Semeria, M. Hernandez, G. Kerrien
Publikováno v:
Journal de Physique IV (Proceedings). 108:71-74
Cette etude concerne les techniques de recuit laser (LTP) et de dopage laser direct (GILD) de jonctions ultra-minces, necessaires a la fabrication des composants microelectroniques du futur (generations CMOS sub 0,1 μm). Des jonctions de 20 a 80 nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8be892e322a710dbea78d977b9a03893
https://doi.org/10.1051/jp4:20030599
https://doi.org/10.1051/jp4:20030599
Autor:
Dominique Débarre, D. Zahorski, G. Kerrien, J.-L. Santailler, C. Laviron, D. Camel, J. Boulmer, M.N. Semeria, J. Venturini, M. Hernandez, T. Sarnet
Publikováno v:
Applied Surface Science. :345-351
In the last few years, laser thermal processing (LTP) has become a potential solution for sub-0.1 μm technology requirements, as focused by the international technology roadmap for semiconductors (ITRS). This paper presents a numerical simulation of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d80445a0faded0525c6cfc9a213cc0b
https://doi.org/10.1016/s0169-4332(02)01395-8
https://doi.org/10.1016/s0169-4332(02)01395-8
Autor:
C. Busseret, M.N. Semeria, Eric Gautier, Abdelkader Souifi, S Monfray, N. Buffet, Thierry Baron
Publikováno v:
Materials Science and Engineering: C. 19:237-241
Nanocrystal-based devices are possible candidates for future electronics. In this context, we have studied the electronic properties of Si nanocrystals (nc-Si) embedded in a SiO 2 matrix. This work is devoted to the characterization of nc-Si by means
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a1b94a1e3374b432566797496c0c19f
https://doi.org/10.1016/s0928-4931(01)00482-9
https://doi.org/10.1016/s0928-4931(01)00482-9
Autor:
F. Martin, Gérard Guillot, J. Gautier, Abdelkader Souifi, C. Busseret, Thierry Baron, M.N. Semeria
Publikováno v:
Superlattices and Microstructures. 28:493-500
Charging and discharging phenomena from silicon nanocrystals have been studied by means of capacitance–voltage characteristics on P-type metal-oxide-semiconductor (P-MOS) capacitors with embedded self-assembled silicon quantum dots. The dots have a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ca16a356a4682f33377670c3ca8df0d
https://doi.org/10.1006/spmi.2000.0953
https://doi.org/10.1006/spmi.2000.0953
Autor:
Dominique Débarre, M. Hernandez, J. Boulmer, T. Sarnet, D. Zahorski, C. Laviron, G. Kerrien, D. Camel, J. Venturini, J.-L. Santailler, M.N. Semeria
Publikováno v:
MRS Proceedings. 765
According to the International Technology Roadmap for Semiconductors (ITRS), the doping technology requirements for the MOSFET source and drain regions of the future CMOS generations lead to a major challenge. A critical point of this evolution is th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b848c52857f28ba7c08d53db0f1fca9d
https://doi.org/10.1557/proc-765-d7.3
https://doi.org/10.1557/proc-765-d7.3
Autor:
J. Boulmer, D. Zahorski, Dominique Débarre, M.N. Semeria, M. Hernandez, C. Laviron, M. Stehle, G. Kerrien
Publikováno v:
Extended Abstracts of the Second International Workshop on Junction Technology. IWJT. (IEEE Cat.No.01EX541C).
Formation of ultra shallow junction will need laser annealing process in an imminent future. The VEL 15 laser source from SOPRA allows to anneal in a single shot a complete die with /spl plusmn/3.5% uniformity, and with enough energy to melt silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5035ab59b785ec7e2bd37e5ca35b5267
https://doi.org/10.1109/iwjt.2001.993835
https://doi.org/10.1109/iwjt.2001.993835
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