Zobrazeno 1 - 10
of 24
pro vyhledávání: '"M.M. Shwarts"'
Publikováno v:
Silicon. 11:1011-1015
Purpose of the work is to study a nature of the excess tunnel current in heavily doped silicon p − n junction diodes with lengthy compensation region in the p − n junction. In such the diodes, formation of the system of electron and hole “lakes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dc9e9ff488d4f45e145d40763842560
https://doi.org/10.1007/s12633-018-9923-z
https://doi.org/10.1007/s12633-018-9923-z
Publikováno v:
Cryogenics. 50:417-420
Time-resolved measurements have been performed of periodic oscillations in the voltage drop across a silicon diode which is fed by stabilized direct current (the situation for temperature measurement) in the region of instability connected with low-t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f58187777a9ea9843d748a118afb820f
https://doi.org/10.1016/j.cryogenics.2010.04.002
https://doi.org/10.1016/j.cryogenics.2010.04.002
Publikováno v:
Sensors and Actuators A: Physical. :271-279
We present a new type of silicon diode temperature sensors (DTSs) with high radiation resistance up to the dose of gamma irradiation ∼107 rad. Investigations of electrophysical and metrological characteristics of DTSs have been carried out in the r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c6bb26e0af6a8a2415ca4898433cb75
https://doi.org/10.1016/s0924-4247(01)00874-3
https://doi.org/10.1016/s0924-4247(01)00874-3
Publikováno v:
Proceedings SENSOR 2011.
At low temperatures, usual diode temperature sensors on the base of silicon are strongly subjected to influence of magnetic fields that excludes possibility their use under these conditions [1]. The reason is a freezing-out of free carriers in the di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c87c7f634ee4d178fac79d142c7c58fc
https://doi.org/10.5162/sensor11/sp3.1
https://doi.org/10.5162/sensor11/sp3.1
At the liquid helium temperature and under application of magnetic fields up to 9.4 T, a voltage drop across a silicon diode with metallic conductivity of the emitter and base has been measured under passing a constant forward current through the dio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::334be57ed3ef1f46f1be884056960c86
http://dspace.nbuv.gov.ua/handle/123456789/117628
http://dspace.nbuv.gov.ua/handle/123456789/117628
Publikováno v:
2008 International Conference on Advanced Semiconductor Devices and Microsystems.
In this work, we present the results of development of element base for advanced cryogenic silicon diode temperature sensors (DTSs). In these sensors, influence of the switching effects on sensor characteristics is absent, that allows solving the pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::763c655e5c583c3c10bff6a6b93e140c
https://doi.org/10.1109/asdam.2008.4743327
https://doi.org/10.1109/asdam.2008.4743327
Measurements of temperature dependences of excess tunnel current in heavily doped silicon p-n junction diodes at fixed values of the forward bias are carried out in liquid helium temperature region. In some voltage interval, these dependences are des
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d9414fa276ab3843397aa3807971829a
http://dspace.nbuv.gov.ua/handle/123456789/120652
http://dspace.nbuv.gov.ua/handle/123456789/120652
Publikováno v:
AIP Conference Proceedings.
We present a new type of diode temperature sensor (DTS) developed on the basis of heavily doped n+‐p and p++‐n+ silicon structures for use in extreme environments. These DTSs are advanced devices with minimized influence of self‐heating and noi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1a5d6dca776c885a2976d2ab72b589b
https://doi.org/10.1063/1.1627281
https://doi.org/10.1063/1.1627281
Publikováno v:
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386).
Original results are presented on the development of new stable and reproducible silicon diode temperature sensors (DTSs), characterized by high interchangeability, with the temperature response curve controlled by the current. For these sensors, in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ca6ab84ac681e13c008c94e04de333d
https://doi.org/10.1109/asdam.2000.889518
https://doi.org/10.1109/asdam.2000.889518
Publikováno v:
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386).
A new type of the silicon cryogenic diode temperature sensors (DTSs) with advanced technical characteristics has been developed on the base of highly doped n/sup ++/-p/sup +/ structures. For expansion of opportunities of the practical applications of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4010b8dc2805eb25be929cb5b4e7aad0
https://doi.org/10.1109/asdam.2000.889543
https://doi.org/10.1109/asdam.2000.889543