Zobrazeno 1 - 10
of 31
pro vyhledávání: '"M.M. Sanfacon"'
Autor:
F. T. J. Smith, Nasser H. Karam, M. Leonard, A. Mastrovito, Nadia A. El-Masry, M.M. Sanfacon, R. Sudharsanan
Publikováno v:
Journal of Electronic Materials. 24:483-489
Results of large-area (up to 1000 cm2/run) Cd1-xZnxTe heteroepitaxy on both GaAs and GaAs/Si substrates by metalorganic chemical vapor deposition (MOCVD) are presented. Cd1-xZnxTe (x = 0-0.1) films exhibited specular surface morphology, 1% thickness
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd27e05532d47a176e42618e2e146f3c
https://doi.org/10.1007/bf02657951
https://doi.org/10.1007/bf02657951
Publikováno v:
Journal of Electronic Materials. 21:335-340
Using a moderate-sized LP-MOCVD production reactor, we have demonstrated the growth of Bragg reflector structures that reflect nearly 100% of the light at the design wave-length of 850 nm. The designs studied consist of alternating layers of Al0.10Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07329b3d1efa74dbcd4eab53440eba42
https://doi.org/10.1007/bf02660463
https://doi.org/10.1007/bf02660463
Autor:
S.P. Tobin, M.M. Sanfacon
Publikováno v:
IEEE Transactions on Electron Devices. 37:450-454
The control of the thickness and composition of the GaAs cap and AlGaAs window layers is essential to the fabrication of high-efficiency AlGaAs/GaAs heteroface solar cells. The use of optical reflectance spectroscopy for the analysis of these structu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::453814ab1ebb271450ab2c4afb5fec47
https://doi.org/10.1109/16.46382
https://doi.org/10.1109/16.46382
Autor:
E.D. Gagnon, M.P. Young, L.M. Geoffroy, Michael R. Melloch, S.M. Vernon, M.M. Sanfacon, Mark Lundstrom, G.B. Lush, M. P. Patkar
Publikováno v:
Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9).
The authors have performed basic characterization studies of thin-film GaAs n/p and p/n solar cells made by epitaxial lift-off. They find that the internal quantum efficiency is enhanced by as much as 71% in these cells after lift-off due to the pres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::739553371bf47748e8a62197720be101
https://doi.org/10.1109/pvsc.1993.346923
https://doi.org/10.1109/pvsc.1993.346923
Publikováno v:
The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991.
The achievement of cell inefficiencies of 21.3% ( approximately 200X, AM1.5D) for a GaAs-on-Si solar cell, and 27.6% ( approximately 200X, AM1.5D) for a GaAs homoepitaxial solar cell is reported. The value of 21.3% represents the highest efficiency r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a7cbf47615136cd28a25c241b9783c4
https://doi.org/10.1109/pvsc.1991.169237
https://doi.org/10.1109/pvsc.1991.169237
Publikováno v:
The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991.
The use of epitaxial multilayer dielectric mirrors (Bragg reflectors) as back-surface reflectors in thin-film GaAs solar cells on GaAs and silicon substrates is investigated. Al/sub 0.3/Ga/sub 0.9/As/Al/sub 0.85/Ga/sub 0.15/As Bragg reflectors were g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7d1b87317020663f5e688da161a9377
https://doi.org/10.1109/pvsc.1991.169199
https://doi.org/10.1109/pvsc.1991.169199
Publikováno v:
The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991.
GaAs/Ge two-junction tandems up to 23.4% efficient at 9 AM0 suns were made. This efficiency is a record for a monolithic, two-terminal GaAs/Ge tandem cell, and also exceeds the best efficiency reported (23%) for a single-junction GaAs concentrator at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3f21ff5dae34ec92212ec717e0b1409
https://doi.org/10.1109/pvsc.1991.169185
https://doi.org/10.1109/pvsc.1991.169185
Publikováno v:
IEEE Conference on Photovoltaic Specialists.
The development of GaAs solar cells having a 1-sun, AM1.5 efficiency of 24.8% and a concentrator having an AM1.5 efficiency of 28.7% at 200 suns (both independently measured) is described. Corresponding AM0 efficiencies are 21.7 and 24.5%. These are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd3d6bf06dc4be49744be8e9cebca802
https://doi.org/10.1109/pvsc.1990.111610
https://doi.org/10.1109/pvsc.1990.111610
Publikováno v:
Solar Cells. 24:103-115
Efficiencies of 23.7% and 23.6% (1 sun, air mass (AM) 1.5 global) have been achieved for GaAs p-n heteroface cells with areas of 0.25 cm2 and 4.1 cm2 respectively. GaAs concentrator cells with efficiencies of 25.4% (207 suns, AM 1.5 direct) have also
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3473fd6864fc0c5d0c1e0d78ab2cfd04
https://doi.org/10.1016/0379-6787(88)90040-3
https://doi.org/10.1016/0379-6787(88)90040-3
Autor:
S.P. Tobin, C. Bajgar, S.J. Wojtczuk, C.J. Keavney, T.M. Dixon, S.M. Vernon, M.M. Sanfacon, J.T. Daly
Publikováno v:
Solar Cells. 27:107-120
This paper reports the experimental results from several technical approaches aimed at achieving highly efficient solar cells for terrestrial and space-power applications. Efficiencies of up to 28.7% (200X, AM1.5) and 24.8% (1X, AM1.5) have been achi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5f2d34dd1e0db0b8b84a04e9656581e
https://doi.org/10.1016/0379-6787(89)90021-5
https://doi.org/10.1016/0379-6787(89)90021-5