Zobrazeno 1 - 10
of 37
pro vyhledávání: '"M.L. Ke"'
Autor:
A. Boyd, M.L. Ke, Olek P. Kowalski, B.C. Qiu, Xuefeng Liu, R.M. De La Rue, Craig James Hamilton, Stewart D. McDougall, John H. Marsh, Y.H. Qian, B.D. Allan, A.C. Bryce
Publikováno v:
Optical Materials. 14:193-196
The design and operation of long wavelength ridge waveguide distributed Bragg reflector lasers in both InGaAs–InGaAlAs and InGaAs–InGaAsP materials with deeply dry-etched surface gratings are presented. To our knowledge, quantum well intermixing
Autor:
A.C. Bryce, Bocang Qiu, Olek P. Kowalski, M.L. Ke, Craig James Hamilton, F. Camacho, John H. Marsh, Stewart D. McDougall, R.M. De La Rue
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 4:636-646
A novel technique for quantum-well intermixing is demonstrated, which has proven a reliable means for obtaining postgrowth shifts in the band edge of a wide range of III-V material systems. The technique relies upon the generation of point defects vi
Autor:
A.C. Bryce, J. Davidson, P. Dawson, I. Gontijo, J.S. Aitchison, M.L. Ke, Nigel P. Johnson, Gerald S. Buller, Amr S. Helmy, John H. Marsh
Publikováno v:
Heriot-Watt University
A study of the parameters of the process of impurity-free vacancy disordering (IFVD) of GaAs-AlGaAs quantum-well structures is presented. The study includes photoluminescence excitation measurements which show that the as-grown barrier/well interface
Autor:
Xuefeng Liu, M.L. Ke, H.K. Lee, A.C. Bryce, J.S. Aitchison, John H. Marsh, B.C. Qiu, C.B. Button
Publikováno v:
IEEE Photonics Technology Letters. 13:1292-1294
In this letter, we report the fabrication of 2 /spl times/ 2 crosspoint switches, which monolithically integrate passive waveguides, electro-absorption modulators and optical amplifiers onto one chip using sputtered SiO/sub 2/ quantum-well intermixin
Publikováno v:
IEEE Photonics Technology Letters. 12:1141-1143
A useful development of the sputtered SiO/sub 2/ intermixing technique is reported, which uses a single stage of sputtered SiO/sub 2/ deposition and annealing to achieve precise tuning of the bandgap energy in the InGaAs-AlInGaAs material system. The
Publikováno v:
Applied Physics Letters. 73:3393-3395
Spin-on silica capping has been demonstrated to be an effective dielectric encapsulant layer for quantum well (QW) intermixing at temperatures significantly lower than for conventionally deposited silica. A blueshift of up to 125 meV was observed in
Publikováno v:
Journal of Applied Physics. 84:2855-2857
We report photoluminescence and photoluminescence excitation (PLE) investigations of intermixed GaAs/AlGaAs double quantum wells. The PLE spectra provide energy information about many different transitions, from which the band profile can be more rel
Autor:
A.C. Bryce, John H. Marsh, Stewart D. McDougall, B.C. Qiu, Craig James Hamilton, Olek P. Kowalski, M.L. Ke
Publikováno v:
Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129).
Sputtering a thin layer of SiO/sub 2/ (/spl ap/200 nm) followed by high temperature annealing has recently been found to be very promising in promoting quantum well intermixing. The intermixing is thought to be due to point defects generated by the s
Publikováno v:
Scopus-Elsevier
We report a novel method of fabricating a compact, monolithically integrated AlInGaAs Mach-Zehnder asymmetric interferometer for use as a 40 Gbit/s demultiplexer. Instead of regrowth, the plasma process damage induced quantum well intermixing was use
Publikováno v:
LEOS 2000. 2000 IEEE Annual Meeting Conference Proceedings. 13th Annual Meeting. IEEE Lasers and Electro-Optics Society 2000 Annual Meeting (Cat. No.00CH37080).
Here, for the first time, we report the application of this novel technique to a dual wavelength ridge waveguide laser array and an integrated 2x2 cross point optical switch in InGaAs-AlInGaAs material. In the fabrication, a cap layer of 200 nm of PE