Resonant Cavity Enhanced Ge Photodetectors for 1550 nm Operation on Reflecting Si Substrates

Autor: Jifeng Liu, Douglas D. Cannon, Bruno Ghyselen, Lionel C. Kimerling, O.I. Dosunmu, M.S. Unlu, M.K. Emsley

Publikováno v: IEEE Journal of Selected Topics in Quantum Electronics. 10:694-701

We have fabricated and characterized the first resonant cavity-enhanced germanium photodetectors on double silicon-on-insulator substrates (Ge-DSOI) for operation around the 1550-nm communication wavelength and have demonstrated over four-fold improv

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::05460fbbcef8d2e1e663212f30d4c540
https://doi.org/10.1109/jstqe.2004.833900

GaN-based lasers on SiC: influence of mirror reflectivity on L–I characteristics

Autor: Gokhan Ulu, S.-S. Schad, Stefan Bader, Hans-Juergen Lugauer, Markus Kamp, M.S. Unlu, Volker Härle, V. Schwegler, M.K. Emsley, Andreas Weimar, M. Scherer, Alfred Lell, Frank Kühn, Berthold Hahn

Publikováno v: Journal of Crystal Growth. 230:512-516

The influence of the mirror reflectivity on the L–I characteristics of GaN-based lasers has been studied. A cleaved, Al-coated fiber is used as an external micro-mirror to control the reflectance of the end facets allowing for a continuous adjustme

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bc291e1422607ac225b601eba0f4d295
https://doi.org/10.1016/s0022-0248(01)01299-4

Resonant-cavity-enhanced single-photon avalanche diodes on double silicon-on-insulator substrates

Autor: Massimo Ghioni, Ivan Rech, M.K. Emsley, M. Selim Ünlü, Giacomo Armellini, Piera Maccagnani

Publikováno v: Journal of modern optics
56 (2009): 309–316. doi:10.1080/09500340802272332
info:cnr-pdr/source/autori:Massimo Ghioni, Giacomo Armellini, Piera Maccagnani, Ivan Rech, Matthew K. Emsley, M. Selim Ünlü/titolo:Resonant-cavity-enhanced single-photon avalanche diodes on double silicon-on-insulator substrates/doi:10.1080%2F09500340802272332/rivista:Journal of modern optics (Print)/anno:2009/pagina_da:309/pagina_a:316/intervallo_pagine:309–316/volume:56

We report the first resonant-cavity-enhanced single photon avalanche diode (RCE SPAD) fabricated on a reflecting silicon-on-insulator (SOI) substrate. The substrate incorporates a two period distributed Bragg reflector fabricated using a commercially

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7f5238ee3e6ab3566877a464c65408df
https://publications.cnr.it/doc/171657

Design and Integration of All-Silicon Fiber-Optic Receivers for Multi-Gigabit Chip-to-Chip Links

Autor: Yusuf Leblebici, Armin Tajalli, P. Muller, M.S. Unlu, Mojtaba Atarodi, M.K. Emsley

Publikováno v: 2006 Proceedings of the 32nd European Solid-State Circuits Conference.

This paper presents a top-down approach to the design of all-silicon CMOS-based fully integrated optical receivers. From the system-level requirements, we determine the optimum block-level specifications, based on which the individual building blocks

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c9f31638467b0ce19815fe78c3248e27
https://doi.org/10.1109/esscir.2006.307494

High speed resonant cavity enhanced Ge photodetectors on reflecting Si substrates for 1550 nm operation

Autor: Lionel C. Kimerling, M.S. Unlu, Douglas D. Cannon, O.I. Dosunmu, M.K. Emsley

Publikováno v: The 17th Annual Meeting of the IEEELasers and Electro-Optics Society, 2004. LEOS 2004..

We have fabricated high-speed resonant cavity enhanced Ge-on-SOI photodetectors, demonstrating 3 dB bandwidths of more than 12 GHz at 3 V reverse bias and a peak quantum efficiency of 59% at the resonant wavelength of 1540 nm.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::aa5ded8c2832d73994666991f68c1d54
https://doi.org/10.1109/leos.2004.1363154