Zobrazeno 1 - 10
of 49
pro vyhledávání: '"M.J.J. Theunissen"'
Publikováno v:
Solid-State Electronics. 41:1083-1087
Large-area silicon p - i - n photodetectors with an epitaxial thickness ranging from 10–20 μm were fabricated. The photodiode bandwidth, responsivity, capacitance and dark current were characterized as a function of the epilayer thickness. The det
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 14:2645-2650
The depth resolution attainable in secondary ion mass spectroscopy (SIMS) depth profiling is shown to be greatly enhanced by the use of a floating ion gun, which is capable of delivering high primary ion currents (ca. 100 nA) at impact energies down
Autor:
D.E.W. Vandenhoudt, J.M.L. van Rooij-Mulder, Dirk J. Gravesteijn, M.J.J. Theunissen, C. W. T. Bulle‐Lieuwma, G. F. A. van de Walle
Publikováno v:
Journal of Crystal Growth. 118:125-134
The characteristic shape of voids in UHV-deposited amorphous Si layers is investigated by TEM analysis. This shape is determined by the deposition temperature and by subsequent UHV annealing leading to densified layers. Amorphous layers with voids sh
Publikováno v:
Materials Science and Engineering: B. 5:151-156
The recombination lifetime of free carriers in silicon wafers can be determined by measuring the reflected microwave power from the sample following a pulsed optical excitation of free carriers. The total recombination process in semiconductor wafers
Publikováno v:
IEEE SOS/SOI Technology Conference.
Summary form only given. Recent state-of-the-art graphite strip heater ZMR wafers were examined by nondestructive diagnostic tools especially suited for the characterization of very thin Si films. In particular, glancing angle reflection X-ray topogr
Publikováno v:
Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
Plasma-Enhanced CVD (PECVD) and Low-Pressure CVD (LPCVD) silicon-carbon emitters have been fabricated in the same transistor layout together with the best conventional implanted polysilicon emitters. In this way the first direct comparison of DC-tran
Autor:
M.J.J. Theunissen, Cornelis Eustatius Timmering, Doede Terpstra, Raymond J. E. Hueting, W.B. de Boer, Armand Pruijmboom, Jan W. Slotboom, J.J.E.W. Hageraats
Publikováno v:
Proceedings of International Electron Devices Meeting.
A silicon bipolar technology is presented that incorporates a selectively epitaxially grown base in a double-polysilicon transistor. Si-bases as well as Si-SiGe-multilayer bases are applied. Both result in excellent device performance, with cut-off a
Publikováno v:
MRS Proceedings. 568
At the current pace of semiconductor technology development, transistor dimensions in advanced IC products will approach the range of a few tens of nanometers within the next decade. This presents a major challenge for our understanding of defects an
Autor:
M.J.J. Theunissen, A. De Kock, D.E.W. Vandenhoudt, C. W. T. Bulle‐Lieuwma, A.H. Goemans, J. Haisma
Publikováno v:
Journal of The Electrochemical Society. 137:3975-3977
Publikováno v:
MRS Proceedings. 387
Device-quality epi material can be grown at temperatures ranging from 600 to 800°C in commercially available production reactors. The exceptionally steep transitions of Ge, B and, to a lesser extent, P, are characteristics of Si and strained SiGe ep