Zobrazeno 1 - 10
of 71
pro vyhledávání: '"M.J. Kao"'
Publikováno v:
Gynecologic Oncology. 159:315-316
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::853d2079b1cf3989e9a458ab6a53c8c2
https://doi.org/10.1016/j.ygyno.2020.05.570
https://doi.org/10.1016/j.ygyno.2020.05.570
Autor:
B. Stelter, N. Vu, Stephanie M. McGregor, Alain Cagaanan, D.S. Huang, Paul Weisman, Ahmed Al-Niaimi, M.J. Kao
Publikováno v:
Gynecologic Oncology. 158:e14
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b05bc29bada1b0a856646abe4a434d7
https://doi.org/10.1016/j.ygyno.2020.04.032
https://doi.org/10.1016/j.ygyno.2020.04.032
Publikováno v:
Gynecologic Oncology. 154:177-178
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2cae7bf2f58934b13a517e78cbbf1b2
https://doi.org/10.1016/j.ygyno.2019.04.412
https://doi.org/10.1016/j.ygyno.2019.04.412
Publikováno v:
Gynecologic Oncology. 154:116-117
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f48419925d3f4327f22ed3400a53a26
https://doi.org/10.1016/j.ygyno.2019.04.278
https://doi.org/10.1016/j.ygyno.2019.04.278
Publikováno v:
Journal of Magnetism and Magnetic Materials. 282:373-379
A novel Magnetoresistive random access memory (MRAM) cell with Pillar write word line (PWWL) was proposed. Besides the magnetic field induced by bottom write word line, an additional magnetic field is superimposed into the memory cell from current fl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d91053d68e092645ad99355c2716976
https://doi.org/10.1016/j.jmmm.2004.04.087
https://doi.org/10.1016/j.jmmm.2004.04.087
Publikováno v:
Materials Chemistry and Physics. 61:266-269
Improved delta-doped (δ-doped) InGaAs/GaAs field-effect transistors by grading both sides of the InGaAs channel are grown by metal-organic chemical vapor deposition. With the In composition linearly varied from x = 0.18 at the GaAs/InGaAs heterointe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88ed6842addfcba19c70fa19a4544b53
https://doi.org/10.1016/s0254-0584(99)00146-7
https://doi.org/10.1016/s0254-0584(99)00146-7
Publikováno v:
Journal of Magnetism and Magnetic Materials. 304:e297-e299
The thermal stability and the spin transportation phenomenon at room temperature and 140 ° C of a series of magnetic tunneling junctions with the structure of bottom electrode/PtMn/Pinned layer/ AlO x /CoFe/NiFe/top electrode have been investigated.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e0d88d5cbe6dd0e0650da3abfc3b59e
https://doi.org/10.1016/j.jmmm.2006.02.062
https://doi.org/10.1016/j.jmmm.2006.02.062
Publikováno v:
Solid-State Electronics. 38:433-436
Depletion-MIS-like GaAs/In 0.25 Ga 0.75 As/GaAs delta-doped heterostructure field effect transistors (HFETs) have been successfully grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). Hall mobilities as high as 5600 (22000) and 3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7622a722745f63494d9e77816b2f347
https://doi.org/10.1016/0038-1101(94)e0078-s
https://doi.org/10.1016/0038-1101(94)e0078-s
Autor:
T.C. Wang, J.T. Yeh, Y.C. Chen, S.H. Chiou, C. Huang, M.J. Kao, W.H. Wang, M.J. Chen, T.H. Yu, L.L. Chein, M.Y. Liu, N.T. Shih, D.S. Chao, M.-J. Tsai, F. Chen, D. Huang, T.C. Hsiao, L.S. Tu, C. Lee, C.W. Chen, R. Yen, W.S. Chen
Publikováno v:
2007 IEEE International Electron Devices Meeting.
A cross-spacer phase change memory (PCM) cell with ultra-small lithography-independent contact area for reduced writing current has been successfully demonstrated. By crossing the spacer sidewalls of phase change and heater material, a small contact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::052e650f72600d5c52c9fa7be6af9a77
https://doi.org/10.1109/iedm.2007.4418935
https://doi.org/10.1109/iedm.2007.4418935
Autor:
Min-Hung Lee, D.S. Chao, W.S. Chen, M.H. Tseng, W.H. Wang, M.J. Tsai, Y.C. Chen, C.M. Lee, Y. Chuo, M.J. Kao, H.H. Hsu
Publikováno v:
2006 International Symposium on VLSI Technology, Systems, and Applications.
Novel interfacial layer structure was proposed with adjustable resistance ratio and more uniform data distribution capabilities. The reduction of writing power can also be expected with further optimizing the materials and corresponding thicknesses.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a07b2c9dd6ca88c8d9887a859dd12ba8
https://doi.org/10.1109/vtsa.2006.251057
https://doi.org/10.1109/vtsa.2006.251057