Zobrazeno 1 - 10
of 72
pro vyhledávání: '"M.I. Toacsan"'
Autor:
A. Ioachim, M.I. Toacsan, M.G. Banciu, L. Nedelcu, C.A. Dutu, H.V. Alexandru, S. Antohe, E. Andronescu, S. Jinga, P. Nita
Publikováno v:
Thin Solid Films. 698:137898
Autor:
M.I. Toacsan, L. Nedelcu, C.R. Luculescu, Marian Gabriel Banciu, F. Gherendi, A.M. Vlaicu, M. Nistor, N.B. Mandache, A. Ioachim
Publikováno v:
Thin Solid Films. 522:112-116
Ba(Zn1/3Ta2/3)O3 (BZT) thin films were grown on Pt-coated Si substrates at 500 °C substrate temperatures by pulsed electron beam deposition method and post-annealed at 600 and 650 °C for 1 h. The X-ray diffraction patterns indicate that the as-grow
Autor:
A. Ioachim, C. Berbecaru, Iuliana Pasuk, M.I. Toacsan, Marian Gabriel Banciu, Horia V. Alexandru, L. Nedelcu
Publikováno v:
Thin Solid Films. 519:5811-5815
Ferroelectric ceramics Ba0.6Sr0.4TiO3 (BST 40) were prepared, by solid-state reaction in the temperature range 1210–1450 °C. Maximum values of the ceramic densities were around 94% of their theoretical value. X-ray diffraction techniques (XRD) and
Publikováno v:
Journal of Alloys and Compounds. 509:477-481
Ba(Zn 1/3 Ta 2/3 )O 3 (BZT) dielectric resonators were prepared by solid-state reaction. The starting materials were BaCO 3 , ZnO, and Ta 2 O 5 powders with high purity. The double calcined BZT pellets were sintered in air at temperatures of 1575, 16
Autor:
S. D. Stoica, L. Nedelcu, E. Morîntale, A. Ioachim, Aurelian Catalin Galca, Maria Dinescu, M.I. Toacsan, N.D. Scarisoreanu
Publikováno v:
Applied Surface Science. 256:6526-6530
Single-phase Ba(Mg 1/3 Ta 2/3 )O 3 thin films were prepared by radiofrequency plasma beam assisted pulsed laser deposition (RF-PLD) starting from a bulk ceramic target synthesized by solid state reaction. Atomic force microscopy, X-ray diffraction an
Publikováno v:
Ferroelectrics. 391:33-41
Ba 1−x Sr x TiO 3 solid solutions with x = 0.4, 0.5, 0.6 and 0.75 were prepared by solid state reaction at 1260°C. The complex dielectric constant dispersion was investigated in the frequency range 1Hz ÷ 10 MHz for temperatures between –100°C
Autor:
E. Andronescu, S. Jinga, A. Ioachim, C. Berbecaru, G. Voicu, L. Nedelcu, Marian Gabriel Banciu, Horia V. Alexandru, M.I. Toacsan
Publikováno v:
Annals of the New York Academy of Sciences. 1161:549-553
The Ba(Zn(1/3)Ta(2/3))O(3) (BZT) ceramic samples were prepared by solid-state reaction and sintered in the range 1550-1650 degrees C for 2 h. Several methods--X-ray diffraction (XRD) and scanning electron microscopy (SEM)--were used for structural an
Autor:
C. Berbecaru, A. Ioachim, Alin Velea, Horia V. Alexandru, M.I. Toacsan, L. Nedelcu, Corneliu Porosnicu
Publikováno v:
Thin Solid Films. 516:8210-8214
Ceramics (Ba1 − xSrx)TiO3, (BST) with x = 0.25; 0.35; 0.40; 0.50; 0.60; 0.75; 0.90 were prepared by sintering method from BaCO3, SrCO3 and TiO2 of high purity (99.98%). The solid-state reaction was employed to obtain pure and doped BST ceramic samp
Autor:
Valentin Ion, L. Nedelcu, Maria Dinescu, Iuliana Pasuk, A. Ioachim, M.I. Toacsan, N. Scarisoreanu, M. G. Banciu, M. Buda
Publikováno v:
Applied Physics A. 93:675-679
Ba0.6Sr0.4TiO3 (BST) bulk ceramic synthesized by solid state reaction was used as target for thin films grown by pulsed laser deposition (PLD) and radiofrequency beam assisted PLD (RF-PLD). The X-ray diffraction patterns indicate that the films exhib
Autor:
Horia V. Alexandru, A. Ioachim, Stefan Antohe, Ecaterina Andronescu, M.I. Toacsan, C.A. Dutu, S. Jinga, Marian Gabriel Banciu, L. Nedelcu, P. Nita
Publikováno v:
Thin Solid Films. 516:1558-1562
High dielectric materials have gained an important position in microwave electronics by reducing the size and cost of components for a wide range of applications from mobile telephony to spatial communications. Ba(Zn 1/3 Ta 2/3 )O 3 (BZT) is an A(B'B