Zobrazeno 1 - 10
of 36
pro vyhledávání: '"M.I. Grace"'
Publikováno v:
MTT-S International Microwave Symposium Digest.
A solid-state C-band transmitter was developed for the Microwave Landing System. The key component of the transmitter is a solid-state power amplifier using GaAs Read-profile IMPATT diodes to obtain operating output levels approaching 20 Watts. The t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d200220790e36584404a48f1b81fe7fb
https://doi.org/10.1109/mwsym.1976.1123739
https://doi.org/10.1109/mwsym.1976.1123739
Autor:
A.G. Franco, M. Cohn, E.W. Sard, E. Wantuch, J. J. Taub, M.B. Chasek, Leo Young, C.E. Fay, H.B. Smith, T. Mukaihata, J.A. Kaiser, J. H. Richmond, E.B. Roberts, E. M. Jones, A. F. Eikenberg, W.H. Eggimann, B.L. Humphreys, R. E. Collin, P. Das, G. Persky, S. Okwit, J.H. Little, E. Kramer, M.I. Grace, J.B. Davies, R.Q. Maines, G. L. Matthaei, N.M. Kroll, K.L. Kotzebue, J.C. Hoover, S.R. Seshadri, B. R. Nag, W.H. Pepper, R.F. Koontz, J. Shefer, I. Kaufman, F. Keywell, Fang-Shang Chen, E.M. Rutz, M.F. Bottjer, W.H. Steier, B.L. Walsh
Publikováno v:
IRE Transactions on Microwave Theory and Techniques. 10:614-619
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68272e081697f25f5d4814e46371620a
https://doi.org/10.1109/tmtt.1962.1125579
https://doi.org/10.1109/tmtt.1962.1125579
Autor:
M.I. Grace
Publikováno v:
Proceedings of the IEEE. 56:771-773
The theory and performance of an electronically tunable transit-time oscillator are presented. The ferromagnetic resonance properties of a YIG toroid were used to magnetically tune the frequency of oscillation over a 3000-MHz frequency range with a m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8218cbac6cc9acfa65fbac077b65f46a
https://doi.org/10.1109/proc.1968.6391
https://doi.org/10.1109/proc.1968.6391
Autor:
M.I. Grace, H.T. Minden
Publikováno v:
1965 International Electron Devices Meeting.
We have observed microwave oscillations in reverse biased silicon planar epitaxial diodes. The p-i-n structure was not unlike that suggested by Read, but the diodes were operated well beyond breakdown in the manner described by Johnston et al. The os
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea933f7f6539dc142b3d55bf1e864ddb
https://doi.org/10.1109/iedm.1965.187513
https://doi.org/10.1109/iedm.1965.187513
Autor:
M.I. Grace, D.E. Sawyer
Publikováno v:
1965 International Electron Devices Meeting.
Measurements on a degenerate UHF photoparametric amplifier using an optical signal modulated at 690 Mc has confirmed the 3 dB noise figure predicted. The silicon photoparametric diode served as both the photodetector and varactor and was novel in sev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e6d8a0d4e22fadcc0e5106f7fb11a1c5
https://doi.org/10.1109/iedm.1965.187578
https://doi.org/10.1109/iedm.1965.187578
Publikováno v:
IEEE Transactions on Electron Devices. 23:1107-1108
A TRAPATT diode has been fabricated using a variation of silicon planar technology. Its design combines the advantages of the surface stability of the planar process with low parasitic capacitance usually associated only with mesa devices. Since shal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53f5a4960987607fcad1a623666b8db7
https://doi.org/10.1109/t-ed.1976.18548
https://doi.org/10.1109/t-ed.1976.18548
Autor:
M.I. Grace
Publikováno v:
Proceedings of the IEEE. 54:1570-1571
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04973a2e68eb5dc6713d9f5d765a5434
https://doi.org/10.1109/proc.1966.5187
https://doi.org/10.1109/proc.1966.5187
Autor:
M.I. Grace, G. Gibbons
Publikováno v:
Proceedings of the IEEE. 58:512-513
High-efficiency pulsed microwave amplification and oscillation have been obtained at X-band using punch-through silicon p-n junction diodes mounted in a ridged waveguide. Peak powers of 20 W at 30 percent efficiency were measured at 8.6 GHz.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d21c7a87ca5e5b218d07e94b46634e4
https://doi.org/10.1109/proc.1970.7683
https://doi.org/10.1109/proc.1970.7683
Autor:
M.I. Grace
Publikováno v:
Proceedings of the IEEE. 55:713-714
A pulsed avalanche transit-time diode oscillator has been phase locked to a low-level CW signal. The phase locking reduces the incidental FM on the phase to a negligible amount, and pulse-to-pulse coherence is achieved.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1383cd7810b0b74dffe0192156711bbd
https://doi.org/10.1109/proc.1967.5657
https://doi.org/10.1109/proc.1967.5657
Publikováno v:
Proceedings of the IEEE. 60:1443-1444
Silicon TRAPATT diodes have been operated at over 40-percent efficiency in X band. This improved efficiency has been associated with steep doping gradients at the epitaxial layer substrate interface and low parasitic series resistances of the high-pe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4b9a31becc1c41e31a5d1aad31f869c
https://doi.org/10.1109/proc.1972.8921
https://doi.org/10.1109/proc.1972.8921