Zobrazeno 1 - 10
of 132
pro vyhledávání: '"M.I. Elinson"'
Publikováno v:
Neural Processing Letters. 12:215-223
The positive role of parametric noise in neural systems is shown. In analogy with transistor effect the weak input signals control the intensive response of nonlinear neurons to parametric noise. As a result gigantic amplification of input signals ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::331d434768a0dd4c3f108d73e897dcf1
https://doi.org/10.1023/a:1026578116767
https://doi.org/10.1023/a:1026578116767
Autor:
V. G. Baru, A. P. Chernushich, V. A. Jitov, L. Yu. Zaharov, P. Harris, G. V. Stepanov, M.I. Elinson, S. Bayliss, V. I. Pokalyakin
Publikováno v:
Microelectronic Engineering. 36:111-114
Visible photo- and electroluminescence was found at room temperature in two types of nanocomposite layers SiN x (Si). The first type of layers was obtained by annealing a-Si films in nitrogen at 900–950°C. The second type of layers was obtained by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bd96794f06502fef54c7f8311396e3f
https://doi.org/10.1016/s0167-9317(97)00027-0
https://doi.org/10.1016/s0167-9317(97)00027-0
Publikováno v:
Physics Letters A. 201:229-233
We investigate nonlinear periodic structures in a coherent state of Wannier-Mott excitons sustained by resonant optical pumping in semiconductors. The structures appear after finite amplitude disturbances, when the initial homogeneous state is stable
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bec90610d8fd79ae04f4f9739e44becf
https://doi.org/10.1016/0375-9601(95)00203-f
https://doi.org/10.1016/0375-9601(95)00203-f
Publikováno v:
Proceedings of 1994 IEEE International Conference on Neural Networks (ICNN'94).
Transformation of neural networks containing threshold adders into media of oscillator elements and using of such media for image processing are studied. This paper develops our works devoted to connections between active media and neural networks. >
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1011e53542cf1240b5916c6ac66719db
https://doi.org/10.1109/icnn.1994.374971
https://doi.org/10.1109/icnn.1994.374971
Autor:
A.S. Cohen, W.H. Johnson, P.I. Perov, M.I. Elinson, M.G. Evtikhov, Yu. N. Orlov, Yu.I. Balkarey
Publikováno v:
1998 IEEE International Joint Conference on Neural Networks Proceedings. IEEE World Congress on Computational Intelligence (Cat. No.98CH36227).
A new architecture for a neural network with associative properties is proposed. Elements of each stored image receive a special mark following local connection training. "All to all" connections are replaced with connections to a special "central ge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f26f01d32d7c09d55b78b719a749cdbe
https://doi.org/10.1109/ijcnn.1998.685896
https://doi.org/10.1109/ijcnn.1998.685896
Publikováno v:
The Second International Symposium on Neuroinformatics and Neurocomputers.
We proposed and investigated numerically the new digital time-pulse neural network with global feedback. The basic elements of the network are 1D unidirected autowave channels. The finite velocity of pulse propagation along the channels allows us to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d95022ff9cd59f872bb1ddf10a034d00
https://doi.org/10.1109/isninc.1995.480840
https://doi.org/10.1109/isninc.1995.480840
Publikováno v:
Russian Microelectronics. 29:217-218
The feasibility of creating a semiconductor-semimetal-semiconductor transistor with fast electron transit through its base is considered.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0deb2d08ad47f37b26780cf1a049b876
https://doi.org/10.1007/bf02773269
https://doi.org/10.1007/bf02773269
Autor:
Bernatskii, D. P.1 (AUTHOR), Pavlov, V. G.1 (AUTHOR) vpavlov@ms.ioffe.ru
Publikováno v:
Technical Physics. Dec2023, Vol. 68 Issue 12, p545-548. 4p.
Publikováno v:
Thin Solid Films. 34:279-282
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94b9c9c32ca466b1595930f985879b6f
https://doi.org/10.1016/0040-6090(76)90476-4
https://doi.org/10.1016/0040-6090(76)90476-4
Publikováno v:
physica status solidi (b). 69:145-152
A quantitative study is made of the band structure in Bi by tunnel spectroscopy of size-quantized films. The positions of quantum energy levels are determined for a wide range of film thickness (700 to 3200 A). On the basis of the two-band model the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdb487f21960882b412ae8dea3324f66
https://doi.org/10.1002/pssb.2220690116
https://doi.org/10.1002/pssb.2220690116