Zobrazeno 1 - 10
of 33
pro vyhledávání: '"M.H.F. Overwijk"'
Autor:
D Reefman, M.H.F Overwijk
Publikováno v:
Micron. 31:325-331
In the present paper, we investigate the performance of maximum-entropy deconvolution, in removing the instrumental response function from electron energy-loss spectra. To this end we make use of spectra acquired from the carbon K-edge in graphite fo
Publikováno v:
Ultramicroscopy. 77:1-11
A new method for off-axis holography is presented with a beam splitter crystal in the illumination system of the electron microscope and a biprism in the selected area aperture plane. The method allows high resolution off-axis holography, up to the i
Publikováno v:
Ultramicroscopy. 67:163-170
Due to the influence of three-fold astigmatism, the spatial resolution obtained on many modern high-resolution transmission electron microscopes is often not better than 0.2 nm. Although beam tilt can mask the effect of three-fold astigmatism when im
Publikováno v:
Ultramicroscopy. 64:249-264
Phase-retrieval methods in high-resolution transmission electron microscopy allow one to determine the wave function at the exit-plane of the object (the exit-plane wave function). Viable methods for the retrieval of the exit-plane wave function are
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 96:257-260
We compare the gettering efficiency of C, O and He implantation into Cz-grown silicon. After the getter implantation, with a projected range of 1.2 μm, we introduce a controlled amount of either Fe or Cu through low-energy implantation. Subsequently
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 91:322-326
The incorporation of Nd ions in SrTiO 3 can be studied conveniently by means of the photoluminescence spectrum originating from the Nd 3+ ion. We have used Nd 3+ spectra obtained at liquid-helium temperatures, to study the annealing behavior of ion i
Autor:
M.H.F. Overwijk, F. C. van den Heuvel
Publikováno v:
Journal of Applied Physics. 74:1762-1769
A time‐dependent model for focused‐ion‐beam‐induced deposition is presented which explicitly takes the scanning strategy of the beam during deposition into account. The model differentiates between the contribution of the beam center and that
Publikováno v:
Microelectronic Engineering. 21:209-212
The modification or repair of integrated circuits by means of focused-ion-beam-induced deposition occasionally fails due to interruptions in the deposited metal line at steps on the surface. In this paper we study the parameters which determine the q
Autor:
M.H.F. Overwijk, F.C. van den Heuvel
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :1324-1327
A time-dependent model for focused-ion-beam-induced metal deposition is presented which describes the competition between gas adsorption and ion-assisted gas removal, and the competition between metal deposition and sputtering. The model contains all
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :1185-1188
Optical spectroscopy is employed to study the incorporation of Nd implanted in SrTiO 3 . The photoluminescence of the Nd 3+ ion enables us to monitor the reconstruction of the host lattice. We have implanted 1 mol% Nd in SrTiO 3 , and studied the pho