Zobrazeno 1 - 10
of 47
pro vyhledávání: '"M.H. Somerville"'
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 8:283-288
We have studied the electrical degradation of RF-power PHEMTs by means of in situ 2-D light-emission measurements. Electroluminescence originates in the recombination of holes that have been generated by impact ionization. The local light intensity,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::252efced71b7e1323fffdab944a87b4e
https://doi.org/10.1109/tdmr.2008.920304
https://doi.org/10.1109/tdmr.2008.920304
Publikováno v:
IEEE Transactions on Electron Devices. 47:922-930
We present a new model for the the kink effect in InAlAs/InGaAs HEMTs. The model suggests that the kink is due to a threshold voltage shift which arises from a hole pile-up in the extrinsic source and an ensuing charging of the surface and/or the buf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6588d786fc1acbc2620b0171b5ad9bd9
https://doi.org/10.1109/16.841222
https://doi.org/10.1109/16.841222
Publikováno v:
IEEE Transactions on Electron Devices. 47:1560-1565
We have developed a methodology to diagnose the physical mechanisms limiting the manufacturing uniformity of millimeter-wave power InAlAs/InGaAs HEMT's on InP. A statistical analysis was carried out on dc figures of merit obtained from a large number
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e04c186db4e6fd92d2c40d42f3d34b6
https://doi.org/10.1109/16.853031
https://doi.org/10.1109/16.853031
Publikováno v:
IEEE Transactions on Electron Devices. 46:1087-1093
We have carried out a systematic study of on-state breakdown in a sample set of InAlAs/InGaAs HEMT's using a new gate current extraction technique in conjunction with sidegate and temperature-dependent measurements. We find that as the device is turn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ed507fa04102256086fdf14bbeed6051
https://doi.org/10.1109/16.766868
https://doi.org/10.1109/16.766868
Autor:
J.A. del Alamo, M.H. Somerville
Publikováno v:
IEEE Journal of Solid-State Circuits. 34:1204-1211
In spite of their outstanding transport characteristics, InP high-electron mobility transistors (HEMTs) deliver lower output power than GaAs pseudomorphic HEMTs (PHEMTs) throughout most of the millimeter-wave regime. However, the superior power-added
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62570d21589dfe560a3e8b1cf175e618
https://doi.org/10.1109/4.782077
https://doi.org/10.1109/4.782077
Publikováno v:
IEEE Transactions on Electron Devices. 45:9-13
Conventional techniques to extract channel mobility, /spl mu/, and sheet carrier concentration, n/sub s/, in heterostructure field-effect transistors (HFETs) do not account for the distributed nature of the device. This can result in substantial erro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9129a81a0d702aac2eab32e1d29ddc40
https://doi.org/10.1109/16.658805
https://doi.org/10.1109/16.658805
Autor:
Christopher W. Leitz, H. Badawi, T. A. Langdo, Zhiyuan Cheng, I. Lauer, Mayank T. Bulsara, Anthony J. Lochtefeld, D.A. Antoniadis, M.H. Somerville, Matthew T. Currie, G. Braithwaite, J.G. Fiorenza
Publikováno v:
IEEE Electron Device Letters. 25:83-85
Strained silicon-on-insulator (SSOI) is a new material system that combines the carrier transport advantages of strained Si with the reduced parasitic capacitance and improved MOSFET scalability of thin-film SOI. We demonstrate fabrication of highly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1263e98792dad59159b7f3ad8f00e66
https://doi.org/10.1109/led.2003.822686
https://doi.org/10.1109/led.2003.822686
Publikováno v:
IEEE Electron Device Letters. 22:565-567
We present a new technique for determining the dominant breakdown mechanism in InAlAs-InGaAs high-electron mobility transistors. By exploiting both the temperature dependence and the bias dependence of different physical mechanisms, we are able to di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e45bfed40e0ecbdef376a4f12571eed7
https://doi.org/10.1109/55.974578
https://doi.org/10.1109/55.974578
Publikováno v:
IEEE Electron Device Letters. 19:405-407
We present a new simple three-terminal technique for measuring the on-state breakdown voltage in HEMTs. The gate current extraction technique involves grounding the source, and extracting a constant current from the gate. The drain current is then ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2934da341d8d1fda82ff8fa58e67858a
https://doi.org/10.1109/55.728894
https://doi.org/10.1109/55.728894
Publikováno v:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
We have studied the electrical degradation of RF power PHEMTs by means of light-emission measurements performed during bias-stress experiments. We show that electrical degradation can proceed in a highly non-uniform manner across the width of the dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0f0ab0fadfd3c82b790e31a09da8d2e
https://doi.org/10.1109/iedm.2005.1609471
https://doi.org/10.1109/iedm.2005.1609471