Zobrazeno 1 - 10
of 115
pro vyhledávání: '"M.H. Pilkuhn"'
Autor:
G. Lehr, G. W. Smith, R. Krüger, M.H. Pilkuhn, Heinz Schweizer, G. Mayer, F. E. Prins, E. M. Fröhlich, E. Lach
Publikováno v:
Superlattices and Microstructures. 12:419-428
The realization and physical investigation of wire and dot structures will be reported. Fabrication requirements for low dimensional semiconductor structures will be discussed for masked implantation enhanced intermixing technique (MIEI) and for dry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09ffc07601160dd094519302cfff8c3b
https://doi.org/10.1016/0749-6036(92)90294-f
https://doi.org/10.1016/0749-6036(92)90294-f
Autor:
M.H. Pilkuhn
Publikováno v:
1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting. IEEE Lasers and Electro-Optics Society 1999 Annual Meeting (Cat. No.99CH37009).
The impressive development of semiconductor lasers started in 1962 with simple homojunction structures, exhibiting very large threshold currents, and only at low temperatures and under pulsed operation. Even the report of CW operation at 77 K generat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::639a0fb7bded5fda933f14246a6f8a7a
https://doi.org/10.1109/leos.1999.813447
https://doi.org/10.1109/leos.1999.813447
Autor:
M.H. Pilkuhn
Publikováno v:
Proceedings. VLSI and Computer Peripherals. COMPEURO 89.
Summary form only given. For any practical realization of molecular electronics, peripheral devices for addressing these molecular systems are absolutely essential; they represent a challenge similar to that of molecular electronics itself and should
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9253d29a990abb5809a1f71394a7a0c0
https://doi.org/10.1109/cmpeur.1989.93349
https://doi.org/10.1109/cmpeur.1989.93349
Autor:
M.H. Pilkuhn
Publikováno v:
Proceedings of 4th International Conference on Solid-State and IC Technology.
Future technologies in information science will rely on structures with decreasing size and on systems with increasing complexity. The physical and technological limits of semiconductor nanostructures point to the use of molecules and atoms in inform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f66c7f0e4ee74006e0f1e1dd14f00bd9
https://doi.org/10.1109/icsict.1995.499260
https://doi.org/10.1109/icsict.1995.499260
Publikováno v:
IEEE Journal of Quantum Electronics. 17:284-288
The liquid-phase epitaxy and device fabrication of p-n and p-i-n Ga 1-x Al x Sb avalanche photodiodes is described. Breakdown voltages up to 95 V and dark currents of 10-4A/cm2have been obtained. With p-i-n diodes we have measured the impact ionizati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d356d2bdfefeedd93ac90c7311988a90
https://doi.org/10.1109/jqe.1981.1071068
https://doi.org/10.1109/jqe.1981.1071068
Autor:
S. Subbanna, H. Schweizer, E. Zielinski, G. Griffiths, M.H. Pilkuhn, S. Hausser, H. Kroemer, R. Stuber
Publikováno v:
IEEE Journal of Quantum Electronics. 23:977-982
The material system GaSb/AlSb is discussed with respect to laser applications. Optical gain measurements reveal that in GaSb/AlSb multiquantum well heterostructures, energy-dependent resonant loss mechanisms such as intervalence band absorption and A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a48f82f906a0ba29a891204c5e197803
https://doi.org/10.1109/jqe.1987.1073451
https://doi.org/10.1109/jqe.1987.1073451
Autor:
D. Munz, M.H. Pilkuhn
Publikováno v:
Solid State Communications. 36:205-209
A new electronic resonant Raman effect in CdS is reported. Resonance enhancement at the I1 and I2 bound excitons is observed in differently doped (Cl, J, Li) samples. The energy, intensity dependency and Zeeman splitting suggest an electronic Raman e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb98886b2235c2e0542ba00433957e4c
https://doi.org/10.1016/0038-1098(80)90261-6
https://doi.org/10.1016/0038-1098(80)90261-6
Publikováno v:
IEEE Journal of Quantum Electronics. 23:969-976
Important laser parameters of GaAs/AlGaAs MQWH's were measured by means of optical gain spectroscopy. Unsaturated optical net gain spectra are carefully analyzed using a model for band-to-band transitions including momentum conservation and an energy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f10860fb2093fbd6f45d4e8b0b943090
https://doi.org/10.1109/jqe.1987.1073463
https://doi.org/10.1109/jqe.1987.1073463
Publikováno v:
IEEE Journal of Quantum Electronics. 19:913-916
GaInAs(P)/InP and GaAlSb(As)/GaSb are interesting material systems for long wavelength optical fiber communication. However lasers fabricated from these materials exhibit a substantially higher temperature dependence of the threshold current than GaA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed0be314293e51bf2ed8d1c56cdf801e
https://doi.org/10.1109/jqe.1983.1071951
https://doi.org/10.1109/jqe.1983.1071951
Publikováno v:
Solid State Communications. 19:841-844
We report the first transmission experiments with tunable i.r. Laser light through an electron-hole plasma in high purity GaAs. Negative absorption (gain) is observed at energies below the chemical potential, and positive absorption above. The experi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::498950777f17610f527b59ee4d7a5d7e
https://doi.org/10.1016/0038-1098(76)90667-0
https://doi.org/10.1016/0038-1098(76)90667-0