Zobrazeno 1 - 10
of 60
pro vyhledávání: '"M.G. Simeone"'
Publikováno v:
Materials Science Forum. 203:231-236
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::644a6bcb8161ebab9478fb68b1af918d
https://doi.org/10.4028/www.scientific.net/msf.203.231
https://doi.org/10.4028/www.scientific.net/msf.203.231
Autor:
Saulius Kaciulis, M.G. Simeone, B. Jusserand, L.G. Quagliano, G. Mattogno, N. Tomassini, M.R. Bruni, N. Gambacorti
Publikováno v:
Journal of crystal growth 150 (1995): 123–127. doi:10.1016/0022-0248(94)00953-8
info:cnr-pdr/source/autori:M.R. Bruni, N. Gambacorti, S. Kaciulis, G. Mattogno, M.G. Simeone, L.G. Quagliano, N. Tomassini, B. Juserand/titolo:Role of the substrate deoxidation process in the growth of strained InAs%2FInP heterostructures/doi:10.1016%2F0022-0248(94)00953-8/rivista:Journal of crystal growth/anno:1995/pagina_da:123/pagina_a:127/intervallo_pagine:123–127/volume:150
info:cnr-pdr/source/autori:M.R. Bruni, N. Gambacorti, S. Kaciulis, G. Mattogno, M.G. Simeone, L.G. Quagliano, N. Tomassini, B. Juserand/titolo:Role of the substrate deoxidation process in the growth of strained InAs%2FInP heterostructures/doi:10.1016%2F0022-0248(94)00953-8/rivista:Journal of crystal growth/anno:1995/pagina_da:123/pagina_a:127/intervallo_pagine:123–127/volume:150
We have investigated the role of the arsenic flux used during the substrate deoxidation process in the MBE (molecular beam epitaxy) growth of strained InAs/InP heterostructures. Two different experiments were performed: (i) thermal cleaning of the In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ee037342863a64cbced441e478a0c0de
https://doi.org/10.1016/0022-0248(95)80193-g
https://doi.org/10.1016/0022-0248(95)80193-g
Autor:
Marina Berti, Claudio Ferrari, M.R. Bruni, Giancarlo Salviati, M.G. Simeone, P. Franzosi, Laura Lazzarini, A. V. Drigo, Filippo Romanato, M. Mazzer
Publikováno v:
Materials Science and Engineering: B. 28:510-514
Strain release and distribution in double InGaAs/GaAs heterostructure buffer layers were studied. A higher misfit dislocation density at the inner interface between the InGaAs layer and the substrate was found in all the samples. This corresponded to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f5d132b8d2c01ca22f411551d3af68e1
https://doi.org/10.1016/0921-5107(94)90117-1
https://doi.org/10.1016/0921-5107(94)90117-1
Publikováno v:
Materials Science and Engineering: B. 28:228-231
Highly strained InAs/InP heterostructures and In x Ga 1−x As/InAs single quantum wells on InP(100) substrates were grown by molecular beam epitaxy. The fabricated heterostructures were investigated by means of the selected-area X-ray photoelectron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::712691b474fd41833a6af62fa5014c92
https://doi.org/10.1016/0921-5107(94)90053-1
https://doi.org/10.1016/0921-5107(94)90053-1
Autor:
Mario Capizzi, M.G. Simeone, M.R. Bruni, Krikor B. Ozanyan, T Worren, Faustino Martelli, A. Frova, Antonio Polimeni
Publikováno v:
ResearcherID
Exciton confinement in the GaAs barriers of InGaAs/GaAs multiple-quantum-well structures is demonstrated by luminescence self-absorption and photoluminescence excitation spectroscopies. The confinement energy and absorption linewidth depend on the ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::28f284be78d67a5972df6d0b74aee844
https://doi.org/10.1016/0038-1101(94)90265-8
https://doi.org/10.1016/0038-1101(94)90265-8
Autor:
M.G. Simeone, C. E. Norman, Laura Lazzarini, M.R. Bruni, Faustino Martelli, Lucia Nasi, Giancarlo Salviati, Claudio Ferrari
Publikováno v:
Scopus-Elsevier
Strain-induced dislocations have been studied in low and medium mismatched (001) oriented In x Ga 1-x As/GaAs superlattice heterostructures. Their optical quality, composition, residual strain, dislocation nature, and location have been studied by x-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7bbaba3ac1258d9a077a24af8ff540cb
https://doi.org/10.1149/1.2220836
https://doi.org/10.1149/1.2220836
Autor:
Stefano Turchini, Lucilla Alagna, M. G. Proietti, M.R. Bruni, T. Prosperi, Jorge M. Garcia, Faustino Martelli, M.G. Simeone
Publikováno v:
Journal of Crystal Growth. 127:592-595
Extended X-ray absorption fine structure in the glancing angle geometry has been used to study the strain accommodation in quantum well structures of In x Ga 1-x As/GaAs (x
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5699bac1ea27ece2d72c9a59b6a301e
https://doi.org/10.1016/0022-0248(93)90690-x
https://doi.org/10.1016/0022-0248(93)90690-x
Publikováno v:
Journal of Crystal Growth. 126:144-150
A series of InxGa1−xAs/GaAs strained single quantum wells (SQWs) grown by the molecular beam epitaxy (MBE) technique, with well thickness ranging from 80 to 200 A, In content 0.05 < x < 0.257 and a 400 A thick GaAs cap has been characterized by the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::422b4890947beb3eb7d55aaf8dcb689e
https://doi.org/10.1016/0022-0248(93)90235-o
https://doi.org/10.1016/0022-0248(93)90235-o
Publikováno v:
Fall 1997 Materials Research Society Meeting, MRS '97, SYMPOSIUM H: Metallic Magnetic Oxides, pp. 137–142, Boston, USA, December 1-4, 1997
info:cnr-pdr/source/autori:R. Marcelli, G. Padeletti, N. Gambacorti, M.G. Simeone, and D. Fiorani/congresso_nome:Fall 1997 Materials Research Society Meeting, MRS '97, SYMPOSIUM H: Metallic Magnetic Oxides/congresso_luogo:Boston, USA/congresso_data:December 1-4, 1997/anno:1997/pagina_da:137/pagina_a:142/intervallo_pagine:137–142
Scopus-Elsevier
info:cnr-pdr/source/autori:R. Marcelli, G. Padeletti, N. Gambacorti, M.G. Simeone, and D. Fiorani/congresso_nome:Fall 1997 Materials Research Society Meeting, MRS '97, SYMPOSIUM H: Metallic Magnetic Oxides/congresso_luogo:Boston, USA/congresso_data:December 1-4, 1997/anno:1997/pagina_da:137/pagina_a:142/intervallo_pagine:137–142
Scopus-Elsevier
The growth technique, the micromorphological and microstructural characterization by means of atomic force microscopy (AFM) and secondary ions mass spectrometry (SIMS) as well as the magnetic properties of a novel class of magnetic multilayers, based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d5e2472340be6390d5fde0d2076bb6a3
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8049355
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8049355
Publikováno v:
Materials science forum 203 (1996): 231–236.
info:cnr-pdr/source/autori:M.R. Bruni, N. Gambacorti, S. Kaciulis, G. Mattogno, M.G. Simeone, S. Viticoli/titolo:Investigation of interface abruptness in strained InAs%2FIn0.53Ga0.47As quantum wells/doi:/rivista:Materials science forum/anno:1996/pagina_da:231/pagina_a:236/intervallo_pagine:231–236/volume:203
info:cnr-pdr/source/autori:M.R. Bruni, N. Gambacorti, S. Kaciulis, G. Mattogno, M.G. Simeone, S. Viticoli/titolo:Investigation of interface abruptness in strained InAs%2FIn0.53Ga0.47As quantum wells/doi:/rivista:Materials science forum/anno:1996/pagina_da:231/pagina_a:236/intervallo_pagine:231–236/volume:203
Highly strained In0.53Ga0.47As/InAs/In0.53Ga0.47As heterostructures were grown on InP (100) substrates by using molecular beam epitaxy. The samples have been investigated by means of the selected-area X-ray spectroscopy and secondary ion mass spectro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::2af2fd512efa6f77d01b7efa54138e8b
http://www.cnr.it/prodotto/i/212767
http://www.cnr.it/prodotto/i/212767