Zobrazeno 1 - 10
of 60
pro vyhledávání: '"M.G. Ramm"'
Autor:
A.O. Avdeev, A.A. Wolfson, A.V. Vasiliev, S. S. Nagalyuk, E. N. Mokhov, D. P. Litvin, Yu. Makarov, Heikki Helava, M.G. Ramm
Publikováno v:
Materials Science Forum. :95-98
AlN bulk crystals were grown by the sublimation “sandwich method” on the SiC substrates. Two types of containers were used: (i) Ta container with a surface layer of TaC created by the special annealing in contact with carbon, (ii) TaC container c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10d5ef84f4862865f2da2af381f79749
https://doi.org/10.4028/www.scientific.net/msf.740-742.95
https://doi.org/10.4028/www.scientific.net/msf.740-742.95
Autor:
O.V. Avdeev, M.G. Ramm, N. Mokhov, S. S. Nagalyuk, T.Yu. Chemekova, Yu.N. Makarov, Heikki Helava
Publikováno v:
Materials Science Forum. :1183-1186
AlN substrates are produced by Physical Vapor Transport (PVT) growth of AlN bulk single crystals followed by post growth processing of the crystals (calibration, slicing, lapping, and polishing). The AlN substrates are suitable for epitaxial growth.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::477dabbc3981cf8c11b1794c02d18c69
https://doi.org/10.4028/www.scientific.net/msf.645-648.1183
https://doi.org/10.4028/www.scientific.net/msf.645-648.1183
Autor:
E. N. Mokhov, Heikki Helava, Yu.N. Makarov, A.S. Segal, Boris M. Epelbaum, Matthias Bickermann, J.-M. Mäki, G. Huminic, O.V. Avdeev, S. Davis, T.Yu. Chemekova, M.G. Ramm, Filip Tuomisto
Publikováno v:
Journal of Crystal Growth. 310:3998-4001
A1. Characterization A1. Point defects A2. Growth from vapor B1. Nitrides B2. Semiconducting aluminum compounds abstract We have applied positron annihilation spectroscopy to study in-grown vacancy defects in bulk aluminium nitride (AlN) crystals gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09615f1e7779570755163ce9b9f5b62b
https://doi.org/10.1016/j.jcrysgro.2008.06.013
https://doi.org/10.1016/j.jcrysgro.2008.06.013
Autor:
T.Yu. Chemekova, Yu. A. Vodakov, O.V. Avdeev, I. S. Barash, Heikki Helava, Yu.N. Makarov, G. Huminic, S. Davis, S. S. Nagalyuk, E. N. Mokhov, D. S. Bazarevskiy, A.S. Segal, Alexandr Dmitrievich Roenkov, M.G. Ramm
Publikováno v:
Journal of Crystal Growth. 310:881-886
The current status of sublimation growth of aluminum nitride (AlN) bulk crystals is discussed. Growth of AlN single-crystal layers on silicon carbide (SiC) seeds in pre-carbonized tantalum crucibles in graphite equipment and of AlN bulk crystals on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ded8a013e92e8a4f6cbfc8ef8f65de5f
https://doi.org/10.1016/j.jcrysgro.2007.11.059
https://doi.org/10.1016/j.jcrysgro.2007.11.059
Autor:
T.Yu. Chemekova, Yu.N. Makarov, O.V. Avdeev, I. S. Barash, Alexandr Dmitrievich Roenkov, M.G. Ramm, E. N. Mokhov, A.S. Segal, Heikki Helava, A.A. Wolfson
Publikováno v:
Journal of Crystal Growth. 281:93-100
AlN single crystals of 0.5 in diameter and up to 10–12 mm long have been grown by sublimation/recondensation in pre-treated tantalum crucibles. Growth of 45 mm diameter and 4 mm long polycrystalline AlN boules has also been demonstrated. After high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9846b6e03f02550bb19c130380c7a72a
https://doi.org/10.1016/j.jcrysgro.2005.03.016
https://doi.org/10.1016/j.jcrysgro.2005.03.016
Autor:
Yu.N. Makarov, Heikki Helava, S.N. Smirnov, E. N. Mokhov, D. S. Bazarevskiy, A.S. Segal, M.G. Ramm
Publikováno v:
Materials Science Forum. :1545-1548
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::163b850e22d8d47112a7062a2772ec9f
https://doi.org/10.4028/www.scientific.net/msf.457-460.1545
https://doi.org/10.4028/www.scientific.net/msf.457-460.1545
Autor:
Alexandr Dmitrievich Roenkov, Yu. A. Vodakov, Yu.N. Makarov, J.S. Barash, S. Yu. Karpov, I.D. Matukov, Heikki Helava, Ramm, E. N. Mokhov, M.G. Ramm, D.Kh. Ofengeim, D.S. Kalinin, M.V. Bogdanov
Publikováno v:
Materials Science Forum. :63-66
In this paper, we suggest a model of facet formation during bulk SiC growth by Physical Vapor Transport (PVT). The model considers the step-flow growth, with the step density dependent on the local orientation of the crystallization front with respec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aeab11153c75548979e7f0243b45ab39
https://doi.org/10.4028/www.scientific.net/msf.457-460.63
https://doi.org/10.4028/www.scientific.net/msf.457-460.63
Autor:
Heikki Helava, D.Kh. Ofengeim, E. N. Mokhov, Yu.N. Makarov, I.D. Matukov, Yu. A. Vodakov, M.V. Bogdanov, J.S. Barash, M.G. Ramm, D.S. Kalinin, Alexandr Dmitrievich Roenkov, M. S. Ramm, S. Yu. Karpov
Publikováno v:
Journal of Crystal Growth. 266:313-319
Control of the crystallization front profile is of great importance for various aspects of bulk SiC crystal growth by physical vapor transport. The structural defect density, doping uniformity, and polytype stability are largely dependent on the prof
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83c013a9da69e99824f903a0f3b70813
https://doi.org/10.1016/j.jcrysgro.2004.02.060
https://doi.org/10.1016/j.jcrysgro.2004.02.060
Autor:
Yu.N. Makarov, Yu. A. Vodakov, A.S. Segal, M.G. Ramm, Alexandr Dmitrievich Roenkov, S. Yu. Karpov, E. N. Mokhov
Publikováno v:
Journal of Crystal Growth. 211:68-72
A novel model of bulk AlN crystal growth by the sublimation technique is developed. The model takes into account both di!usive and convective transport of gaseous Al and N 2 , and the kinetic limitation of nitrogen adsorption/desorption on AlN surfac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4945918c3b927b0c60c1d77a54d17c68
https://doi.org/10.1016/s0022-0248(99)00844-1
https://doi.org/10.1016/s0022-0248(99)00844-1
Autor:
S. Yu. Karpov, Alexandr Dmitrievich Roenkov, M.G. Ramm, M. S. Ramm, A.V. Kulik, Yu. A. Vodakov, Yu.N. Makarov, E. N. Mokhov, I. A. Zhmakin
Publikováno v:
Journal of Crystal Growth. 211:347-351
Sublimation growth of SiC bulk crystals in tantalum container is studied both experimentally and theoretically. The model of heterogeneous processes occurred on the side wall of the tantalum container proposed recently in Ramm et al. (Mat. Sci. Eng.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::833fb55e5130e6e7c7f0d5a238163c68
https://doi.org/10.1016/s0022-0248(99)00787-3
https://doi.org/10.1016/s0022-0248(99)00787-3