Zobrazeno 1 - 10 of 44 pro vyhledávání: '"M.G. Nakhodkin"'
2
Взаємодiя кисню та гадолiнiю з Si(100)-2 × 1. Утворення системи з роботою виходу 1 еВ
Autor: M.I. Fedorchenko, M.G. Nakhodkin
Publikováno v: Ukrainian Journal of Physics; Vol. 60 No. 2 (2015); 97
Український фізичний журнал; Том 60 № 2 (2015); 97
Changes in the electronic properties of the Si(100) surface, when a multilayer structure of oxidized Gd atoms is created on it, have been studied, by using the electron spectroscopy methods. It is shown that, after a number of adsorption cycles of Gd
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::11421fce3eab5471f2ad960793fff015
https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019268
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3
Дослiдження наноструктурованої поверхнi Si(001)-c(8 × 8) методом скануючої тунельної мiкроскопiї
Autor: S.P. Kulyk, A. Goriachko, M.G. Nakhodkin, P.V. Melnik
Publikováno v: Ukrainian Journal of Physics; Vol. 60 No. 2 (2015); 148
Український фізичний журнал; Том 60 № 2 (2015); 148
The rarely observed Si(001)-c(8 × 8) reconstruction is a unique nanostructured state of the Si(001) surface. It was obtained through the sample contamination with trace amounts of Cu below the electron spectroscopy detection limit. As our detailed S
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1cf6604c2747d69c45a2716ed08e5551
https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019274
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4
Дослiдження нових особливостей поверхнi Ge(111) зi спiвiснуючими реконструкцiями с(2 × 8) та 2 × 2 методом сканувальної тунельної мiкроскопiї
Autor: P.V. Melnik, M.G. Nakhodkin, A. Goriachko
Publikováno v: Ukrainian Journal of Physics; Vol. 60 No. 11 (2015); 1132
Український фізичний журнал; Том 60 № 11 (2015); 1132
The c(2×8) ground state reconstruction of the Ge(111) surface can be easily disrupted by the 2×2 reconstruction, since both of them are rather close to each other in terms of the surface free energy. Both structures are comprehensively studied in t
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2a6727af5274a375a09794414ee1a96b
https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019150
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5
Фотоелeктронна емiсiя катода Si–Gd–O
Autor: M.I. Fedorchenko, M.G. Nakhodkin
Publikováno v: Ukrainian Journal of Physics; Vol. 61 No. 3 (2016); 248
Український фізичний журнал; Том 61 № 3 (2016); 248
Electronic and emission properties of photocathodes fabricated on the basis of multilayered structures of oxidized Gd atoms deposited on the Si(100) surface and additionally covered with fresh layers of Gd atoms have been studied as functions of the
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::616098434b2f1d7f32561337e7d9b3e2
https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019106
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6
A Suggestion of the Graphene/Ge(111) Structure Based on Ultra-High Vacuum Scanning Tunneling Microscopy Investigation
Autor: P.V. Melnik, M.G. Nakhodkin, A. Goriachko
Publikováno v: Ukrainian Journal of Physics; Vol. 61 No. 1 (2016); 75
Український фізичний журнал; Том 61 № 1 (2016); 75
We report on the 5.5√3 × 5.5√3 − R30 ∘ overlayer superstructure observed by the scanning tunneling microscopy on the Ge(111) surface. It shows pronounced effects of the local density of states leading to the strong dependence of STM images o
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ec4436839086f3ed524e5a6a9bae7507
https://doi.org/10.15407/ujpe61.01.0075
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8
Bismuth Growth on Ge(111): Evolution of Morphological Changes From Nanocrystals to Films
Autor: A. Shchyrba, A. Goriachko, M.G. Nakhodkin, P.V. Melnik
Publikováno v: Ukrainian Journal of Physics; Vol. 59 No. 8 (2014); 805
Український фізичний журнал; Том 59 № 8 (2014); 805
The growth of ultra-thin bismuth films up to 15 atomic layers on the atomically clean Ge(111)-c(2×8) substrate at 300 K is investigated before and after the annealing at 450 K by means of ultra-high vacuum scanning tunneling microscopy. The whole ra
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b1c4c7abef199601cd1ee3bc23c89bd4
https://doi.org/10.15407/ujpe59.08.0805
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9
Surface Stresses at the Initial Steps of the GexSi1-x/Si(001) Surface Oxidation
Autor: M.G. Nakhodkin, A.A. Grynchuk, I.P. Koval
Publikováno v: Ukrainian Journal of Physics; Vol. 59 No. 2 (2014); 148
Український фізичний журнал; Том 59 № 2 (2014); 148
Elastic stresses arising at the clean GexSi1−x/Si(001) surface, as well as at the initial stages of its oxidation, are considered qualitatively by analyzing the changes of unit cell dimensions occurring owing to the ad-dimer formation or the atomic
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e40a0ad91c79afec75fdb50c2d679eef
https://doi.org/10.15407/ujpe59.02.0148
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10
Hexagonal C and BN superstructures on Ru(0001) and Ge(111)
Autor: M.G. Nakhodkin, A. Goriachko, Alexei Zakharov, Herbert Over, P.V. Melnik
Publikováno v: Materialwissenschaft und Werkstofftechnik. 44:129-135
A brief overview of hexagonal superstructures with a periodicity of similar to 3 nm formed on Ru(0001) and Ge(111) by graphene or hexagonal boron nitride with a thickness of just a single atomic layer is given. A periodic height corrugation of such l
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ea02a900d04ca0bd1eb323730bb91b3c
https://doi.org/10.1002/mawe.201300108
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