Zobrazeno 1 - 10
of 67
pro vyhledávání: '"M.G. Adlerstein"'
Autor:
M.G. Adlerstein, J.M. Gering
Publikováno v:
IEEE Transactions on Electron Devices. 47:434-439
A physical model for observed current gain degradation in GaAs heterojunction bipolar transistors (HBT's) is suggested in terms of a parameterized mathematical description of accumulating junction damage. The model and measurement suggest a positive
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e39e2b4960209c379fdba2f8f8f30090
https://doi.org/10.1109/16.822291
https://doi.org/10.1109/16.822291
Autor:
M.G. Adlerstein
Publikováno v:
IEEE Transactions on Electron Devices. 45:1653-1655
A simple analytical model is derived for thermoelectronic stability in heterojunction bipolar transistors (HBT's). An expression is presented for the value of emitter ballast resistor needed to stabilize the transistor. The result leads to a stabilit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a167ca68cf4f8964446ab39f7f656d8
https://doi.org/10.1109/16.704359
https://doi.org/10.1109/16.704359
Autor:
M.G. Adlerstein, S.L.G. Chu
Publikováno v:
MTT-S International Microwave Symposium Digest.
Gallium arsenide double-drift Read IMPATT diodes are under development for use at 40 GHz. Such diodes have offered higher efficiency and average power than silicon diodes. The advantage may be ascribed to both the intrinsic properties of GaAs and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9f2732566c1cf55cb2087e4d3628bd2
https://doi.org/10.1109/mwsym.1984.1131881
https://doi.org/10.1109/mwsym.1984.1131881
Autor:
M.G. Adlerstein, J.W. McClymonds
Publikováno v:
MTT-S International Microwave Symposium Digest.
High performance double-drift Read GaAs IMPATT diodes have yielded power levels of 4 W CW with 20 percent efficiency at 20 GHz with a junction temperature less than 250° C. In this paper we describe the profile, chip and thermal design of such diode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a554a9248b0ae2d41205d0cbab1a83d8
https://doi.org/10.1109/mwsym.1982.1130640
https://doi.org/10.1109/mwsym.1982.1130640
Autor:
M.P. Zaitlin, M.G. Adlerstein
Publikováno v:
IEEE Transactions on Electron Devices. 38:1553-1554
A method for the measurement of the thermal resistance of heterojunction bipolar transistors (HBTs) has been developed. The measurement technique is described and its application is illustrated. Results for single-emitter HBTs are explained with the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::859f0e536b498e59470970a1d0849af9
https://doi.org/10.1109/16.81653
https://doi.org/10.1109/16.81653
Approximate formulas for the thermal resistance of IMPATT diodes compared with computer calculations
Autor:
M.G. Adlerstein, L.H. Holway
Publikováno v:
IEEE Transactions on Electron Devices. 24:156-159
Two analytical formulas, which allow the thermal resistance to be calculated approximately for layered heat sinks with finite radii, are presented. They are shown to agree closely with finite-difference computer solutions of the steady-state heat equ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::495dd81232dffa13e81ac62f295e6b01
https://doi.org/10.1109/t-ed.1977.18696
https://doi.org/10.1109/t-ed.1977.18696
Publikováno v:
IEEE Transactions on Electron Devices. 25:1151-1156
We have designed, fabricated, and evaluated gallium arsenide Read IMPATT diodes for K a -band (36-38 GHz)operation. The devices were packaged units intended for manufacturability and high yield. Oscillator output power as high as 710-mW CW was obtain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79adfd342a5c31cf7672e986b4497e9d
https://doi.org/10.1109/t-ed.1978.19240
https://doi.org/10.1109/t-ed.1978.19240
Publikováno v:
IEEE Transactions on Electron Devices. 28:808-811
Microwave admittance measurements in a high power GaAs double-drift Read diode are fitted to an analytical solution to the Read equation. The data can be explained within experimental error by the classical expression for intrinsic avalanche time \ta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::338098a229f5a311dee6698c0f3c70ec
https://doi.org/10.1109/t-ed.1981.20435
https://doi.org/10.1109/t-ed.1981.20435
Publikováno v:
IEEE Transactions on Electron Devices. 30:179-182
A new method is given for determining the electrical series resistance of an IMPATT diode. The measurement is based on observation of the oscillation threshold bias current for a diode in a standard circuit. The method is applied to GaAs diodes near
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::893d97ac08068725b1a66b553e65eedf
https://doi.org/10.1109/t-ed.1983.21092
https://doi.org/10.1109/t-ed.1983.21092
Autor:
M.G. Adlerstein, J. Fines
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 37:571-579
A 35-GHz solid-state injection-locked oscillator giving 38 W peak power with 30% duty cycle is described. The power source utilizes a total of ten GaAs IMPATT (impact avalanche and transit time) diodes grouped in two stages. The performance of the so
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3dc4394c24698d5c532745c06cb3c75
https://doi.org/10.1109/22.21630
https://doi.org/10.1109/22.21630