Zobrazeno 1 - 6
of 6
pro vyhledávání: '"M.F. DeHerrera"'
Publikováno v:
Journal of Crystal Growth. :281-285
We have demonstrated how to use the 44 wavelength ellipsometer for in-situ closed-loop feedback control of a molecular beam epitaxy in order to grow reproducible AlAs GaAs Fabry—Perot cavities. Sample-to-sample reproducibility of the Fabry—Perot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::395420f6103a2cdbbb9a1194674d8c9b
https://doi.org/10.1016/s0022-0248(96)01233-x
https://doi.org/10.1016/s0022-0248(96)01233-x
Autor:
M.F. DeHerrera, Armando A. Rodriguez
Publikováno v:
Technology-Based Re-Engineering Engineering Education Proceedings of Frontiers in Education FIE'96 26th Annual Conference.
This educational research endeavor describes the development of a Windows/C++ PC environment designed to visualize and evaluate the performance of a Twin Lift Helicopter System (TWS) under automatic control. The TLHS consists of two Sikorsky UH-60A B
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e58c8850ffa167c1dad25f04fb370f61
https://doi.org/10.1109/fie.1996.573074
https://doi.org/10.1109/fie.1996.573074
Publikováno v:
Technology-Based Re-Engineering Engineering Education Proceedings of Frontiers in Education FIE'96 26th Annual Conference.
This educational research endeavor describes the development of a MATLAB/Windows/C++ PC environment designed to teach fundamental concepts from classical systems and controls. Interactive computer-aided-lessons (ICALs) form the heart of the environme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbf9a519b89fc2a889b222cfe9e60b63
https://doi.org/10.1109/fie.1996.573031
https://doi.org/10.1109/fie.1996.573031
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 16:1484
We have compiled the optical constants database for InxGa1−xAs which covers the composition range from 0.51 to 0.55 and the temperature range from 400 to 525 °C. The InP substrate temperature was monitored by diffusive reflectance spectroscopy dur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f3414086f1d9578fc60ac73ef2ebe36
https://doi.org/10.1116/1.589971
https://doi.org/10.1116/1.589971
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