Zobrazeno 1 - 10
of 88
pro vyhledávání: '"M.E. Mack"'
Autor:
M.E. Mack
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 237:235-239
Gas cluster ion beams (GCIB) represent a powerful new tool for wafer processing. This paper will review the development status of GCIB equipment as pertains to semiconductor applications.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecd5acb8d59dc2ec9b814987e0a215a8
https://doi.org/10.1016/j.nimb.2004.12.139
https://doi.org/10.1016/j.nimb.2004.12.139
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 96:22-29
The control of wafer charging in high current implantation is the key to maintaining high yeild as gate oxide thicknesses decrease. The effectiveness of different charge neutralization techniques and different Faraday configurations have been evaluat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e14d7d1007c1d69239788afe87ae59b8
https://doi.org/10.1016/0168-583x(94)00447-1
https://doi.org/10.1016/0168-583x(94)00447-1
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 96:80-86
Optical elements at potential represent a serious concern for particle generation in ion implanters. Conditioning of acceleration columns is a well known phenomenon in accelerators but less well known is the fact that the microdischarging, which acco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ff312e1db5df422fbb1778126b4c765
https://doi.org/10.1016/0168-583x(94)00458-7
https://doi.org/10.1016/0168-583x(94)00458-7
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 55:61-65
The generation of an ion beam and its impact into photoresist-masked wafers will have an adverse effect on the vacuum of an ion implanter. This is particularly significant when doping with boron using BF 3 or BCl 3 as the source feed material. As wel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1efe56f3a0b441d014dbf31297a9d6ff
https://doi.org/10.1016/0168-583x(91)96136-9
https://doi.org/10.1016/0168-583x(91)96136-9
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 55:434-438
The current ion beam performance of the Genus G-1500 MeV ion implanter is described in this paper. Substantial improvements of beam currents have been realized by modification of the hot-cathode PIG source used on the ion implanter. Approximately 250
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97a9ab7d8ff22b634bf19d51e77c1516
https://doi.org/10.1016/0168-583x(91)96207-2
https://doi.org/10.1016/0168-583x(91)96207-2
Publikováno v:
Proceedings of 11th International Conference on Ion Implantation Technology.
Electrostatic wafer platens (ESPs) for ion implant systems offer enormous benefits in manufacturing productivity. This paper describes and compares the performance of the standard clamp in current use in more than 50 user sites with a new cooled plat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aaa0bf04108f8b58e22428898957d2a6
https://doi.org/10.1109/iit.1996.586283
https://doi.org/10.1109/iit.1996.586283
Publikováno v:
Proceedings of 11th International Conference on Ion Implantation Technology.
In this paper two-dimensional numerical modeling has been used to simulate the differences between electron and plasma flood systems in the physics of charging. In addition, the affects of the design of the Faraday system on the effectiveness of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21b4e0e6ce02bdeeb8107e23c5dbe89e
https://doi.org/10.1109/iit.1996.586122
https://doi.org/10.1109/iit.1996.586122
Autor:
E. Harrington, K. Regan, J. Bachand, J. Hautala, A. Freytsis, M. Gwinn, N. Hofmeester, M.E. Mack
Publikováno v:
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on.
Gas cluster ion beams (GCIB) are finding many applications for surface smoothing and etching of a variety of materials including semiconductors. Epion has developed commercial processing equipment, which makes possible practical application of GCIB b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::670771267b7245d91e274720337f75c3
https://doi.org/10.1109/iit.2002.1258094
https://doi.org/10.1109/iit.2002.1258094
Publikováno v:
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on.
The design of gas cluster ion beam (GCIB) equipment is complicated by a number of issues unique to such beams. Ion charge and mass are typically not known but instead follow rather broad distributions. Space charge becomes important at much lower cur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbaac52f1bd3f0c644804fa4bc4acca1
https://doi.org/10.1109/iit.2002.1258093
https://doi.org/10.1109/iit.2002.1258093
