Zobrazeno 1 - 10
of 37
pro vyhledávání: '"M.E. Gueunier"'
Publikováno v:
Journal of Non-Crystalline Solids. :477-480
We report on proton irradiation of microcrystalline silicon with 2 MeV protons and find a drop in the mobility–lifetime product related to an increase in the density of gap states as revealed by modulated photocurrent experiments. The dark conducti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff3859512776743b3bb1786bb03e717d
https://doi.org/10.1016/j.jnoncrysol.2004.03.023
https://doi.org/10.1016/j.jnoncrysol.2004.03.023
Publikováno v:
Journal of Non-Crystalline Solids. :390-399
The modulated photocurrent (MPC) technique is reviewed, emphasizing both the widely used high frequency regime and the newly developed low frequency regime in order to characterize localized bandgap states. The matching of the density of states recon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bb31229a7f57dbc19ee40a95c003e22
https://doi.org/10.1016/j.jnoncrysol.2004.03.005
https://doi.org/10.1016/j.jnoncrysol.2004.03.005
Publikováno v:
The European Physical Journal Applied Physics. 26:75-85
It has been demonstrated that the Modulated Photo Current (MPC) technique is a very good tool to probe the density of states (DOS) in the band gap of semiconductors. In this technique two regimes have been underlined: the low frequency or recombinati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::848f3d163b3ec8d24471ac857741ca48
https://doi.org/10.1051/epjap:2004025
https://doi.org/10.1051/epjap:2004025
Publikováno v:
Thin Solid Films. 427:247-251
Polymorphous silicon–germanium (pm-SiGe:H) thin films with Ge contents varying from 1 to 35% were fabricated by plasma enhanced chemical vapour deposition in a high pressure range (1350 mtorr) and under high hydrogen dilution. The electrical and op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ca654f2f5f55150c093dae4e9085502
https://doi.org/10.1016/s0040-6090(02)01196-3
https://doi.org/10.1016/s0040-6090(02)01196-3
Autor:
R. Meaudre, M.E Gueunier, Jean-Paul Kleider, B. Canut, Rudolf Brüggemann, P. Roca i Cabarrocas, S. Lebib
Publikováno v:
Journal of Applied Physics. 92:4959-4967
Hydrogenated polymorphous silicon–germanium samples with Ge content x up to 0.35 have been deposited in a plasma-enhanced chemical vapor deposition system from silane and germane precursors highly diluted in hydrogen and in a high pressure range. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::312c679586280680c89aac9cdf3cf8f0
https://doi.org/10.1063/1.1508429
https://doi.org/10.1063/1.1508429
Publikováno v:
Journal of Non-Crystalline Solids. :1179-1183
Transport properties of microcrystalline silicon (μc-Si:H) films prepared by hot-wire/catalytic chemical vapor deposition (HWCVD) have been investigated by steady-state photocarrier grating (SSPG) and conductivity measurements. Improved diffusion le
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b7fff438d1ade73e7e7c55625c19d07
https://doi.org/10.1016/s0022-3093(01)01085-7
https://doi.org/10.1016/s0022-3093(01)01085-7
Autor:
K.V. Koughia, V.P. Afanasjev, Alexander S. Gudovskikh, E. I. Terukov, M.E Gueunier, Jean-Paul Kleider, A. P. Sazanov
Publikováno v:
Journal of Non-Crystalline Solids. :1070-1074
Multilayered a-Si:H/nc-Si films were deposited using intermediate annealing in a hydrogen plasma of the successively grown thin a-Si:H layers. Results of transmission electron microscopy studies testify that the films have a layered structure with al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8508b9edeff630c4bd73ff191f31540
https://doi.org/10.1016/s0022-3093(01)01073-0
https://doi.org/10.1016/s0022-3093(01)01073-0
Autor:
Yu. K. Undalov, E. I. Terukov, R. Meaudre, K.V. Koughia, M.E Gueunier, Jean-Paul Kleider, V. Kh. Kudoyarova
Publikováno v:
Journal of Non-Crystalline Solids. :699-703
Erbium-doped amorphous silicon films have been deposited using magnetron-assisted silane decomposition (MASD) technique. The increase of partial concentration of O 2 in the gas phase above 6.5 mol% during the deposition enhances the intensity of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e14c47f5e5232eeaa84a24aaa0ac5c12
https://doi.org/10.1016/s0022-3093(01)01210-8
https://doi.org/10.1016/s0022-3093(01)01210-8
Autor:
D. Roy, M.E. Gueunier, R. Meaudre, Christophe Longeaud, O Saadane, Raphaël Butté, M. Meaudre, S. Vignoli
We have studied the density of states and the structural properties of a new class of material. called hydrogenated polymorphous silicon, prepared by decomposition of a mixture of silane and hydrogen in a radio frequency powered plasma enhanced chemi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b6f155cf65eaf171925a14a57651633b
https://infoscience.epfl.ch/record/152743
https://infoscience.epfl.ch/record/152743
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