Zobrazeno 1 - 10
of 91
pro vyhledávání: '"M.D. Giles"'
Autor:
W.C. Dietrich, V.T. Rajan, M.E. Law, R.H. Wang, G.R. Chin, P.K. Mozumder, M.D. Giles, M.S. Karasick, L.R. Nackman, D.M.H. Walker, A.S. Wong, Duane S. Boning
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 13:82-95
This work describes the Semiconductor Wafer Representation (SWR) for representing and manipulating wafer state during process and device simulation. The goal of the SWR is to provide an object-oriented interface to a collection of functions designed
Publikováno v:
2006 International Conference on Simulation of Semiconductor Processes and Devices.
In recent years a lot of attention has been given to engineering the stress state in ULSI devices to enhance device performance. As a result the stress conditions inside state-of-the-art devices are significantly more complex than simple hydrostatic
Publikováno v:
1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095).
We present a high speed adaptive tetrahedral mesh refinement method based on the recursive multi-tree algorithm. To our knowledge, this is the first refinement algorithm that is able to improve the quality of the original mesh. In this paper, the met
Autor:
P.K. Mozumder, D. Bonning, N. Khalil, W.C. Dietrich, R. Cottle, R. Tremain, A.S. Wong, M.D. Giles, D.M.H. Walker, R. Harris, Sani R. Nassif, D. Schroeder, V.T. Rajan, M.E. Law, M.S. Karasick, L.R. Nackman, S. Duvall, G.R. Chin, R.H. Wang, M.J. McLennan
Publikováno v:
NUPAD IV. Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits.
Publikováno v:
NUPAD IV. Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits.
Autor:
M.D. Giles
Publikováno v:
2005 International Conference On Simulation of Semiconductor Processes and Devices.
TCAD process and device modeling has become an essential component of advanced technology development, delivering physical insight into processes and device operation and enabling development and optimization of technology flows. This paper highlight
Autor:
Chung Yang, M.D. Giles
Publikováno v:
Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V.
This paper describes the design and implementation of a flexible architecture for representing general, mesh-based fields in one, two, and three dimensions. Representation of fields is one component of Semiconductor Wafer Representation (SWR) for TCA
Autor:
A.D. Lilak, M.E. Law, K.S. Jones, M.D. Giles, E. Andideh, M.-J. Caturla, T. Diaz de la Rubia, null Jing Zhu, S. Theiss
Publikováno v:
International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).
A physically-based continuum diffusion/clustering model has been applied to the simulation of transient activation/reactivation of ion implanted boron. This work is aimed at the optimization and development of post-implant thermal cycles for minimal
Publikováno v:
International Electron Devices Meeting. IEDM Technical Digest.
Boron doped structures are difficult to model due to transient enhanced diffusion (TED) and defect driven clustering. The purpose of this work is to develop a new model which predicts both the defect enhanced diffusion and the defect enhanced cluster
Autor:
Thomas Lenosky, T. Diaz de la Rubia, M.-J. Caturla, Babak Sadigh, Silva K. Theiss, M.D. Giles, Majeed Foad
Publikováno v:
2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502).
We present a kinetic Monte Carlo model for boron diffusion, clustering and activation in ion implanted silicon. The input to the model is based on a combination of experimental data and ab initio calculations. The model shows that boron diffusion and