Zobrazeno 1 - 10
of 33
pro vyhledávání: '"M.C. Vecchi"'
Publikováno v:
Sensors and Actuators A: Physical. 178:1-9
This paper describes a computationally efficient numerical model to study effects determining the offset of five-contact vertical Hall sensors (VHS). It applies a two-dimensional finite element model implemented in COMSOL Multiphysics and allows to t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e74d3f3eb8ae0c1418bfd4c475a7688
https://doi.org/10.1016/j.sna.2012.01.024
https://doi.org/10.1016/j.sna.2012.01.024
Publikováno v:
Sensors Update. 4:109-137
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7413e461e3a4f424dfefbbbe6c850adf
https://doi.org/10.1002/1616-8984(199808)4:1<109::aid-seup109>3.0.co
https://doi.org/10.1002/1616-8984(199808)4:1<109::aid-seup109>3.0.co
Autor:
Massimo Rudan, M.C. Vecchi
Publikováno v:
IEEE Transactions on Electron Devices. 45:230-238
The Spherical-Harmonics solution of the Boltzmann Transport Equation (BTE) in silicon is generalized to the full-band case for both electrons and holes. The relevant scattering mechanisms, including impact ionization, are modeled consistently. Compar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddb0a5af93863f9f785bb0ac3f4e8d23
https://doi.org/10.1109/16.658836
https://doi.org/10.1109/16.658836
Publikováno v:
IEEE Transactions on Electron Devices. 45:2010-2017
The full-band spherical-harmonics solution of the Boltzmann transport equation in silicon is achieved for both the conduction and valence band. The relevant scattering mechanisms (impact ionization, acoustic and optical phonons, ionized impurities) a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cefce8d96a3fc20eb36028b27633b146
https://doi.org/10.1109/16.711368
https://doi.org/10.1109/16.711368
Publikováno v:
2013 IEEE SENSORS.
We present a novel CMOS-integrated, vertical Hall sensor (VHS) with optimized symmetry for the measurement of in-plane magnetic field components. Due to the junction field effect, conventional five-contact VHS (5CVHS) suffer from considerable offsets
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82fdb02e14ca24924ba6bc99678abac0
https://doi.org/10.1109/icsens.2013.6688286
https://doi.org/10.1109/icsens.2013.6688286
Autor:
M.C. Vecchi, Luis G. Reyna
Publikováno v:
Solid-State Electronics. 37:1705-1716
Two systems of generalized equations are derived by applying the method of moments to an approximation of the Boltzmann transport equation for semiconductors, valid for general band structure. The equations of one of the resulting models are examined
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac493228e9ef5f091fcb5cfc6ed664c1
https://doi.org/10.1016/0038-1101(94)90217-8
https://doi.org/10.1016/0038-1101(94)90217-8
Autor:
A. Stricker, Giorgio Baccarani, F. Illien, M. Valdinoci, M.C. Vecchi, L. Zullino, D. Ventura, Massimo Rudan
Publikováno v:
Scopus-Elsevier
In this work, electron impact-ionization in silicon is investigated both theoretically and experimentally in the temperature range between 25 and 400/spl deg/C. A new compact model for the impact-ionization coefficient is proposed, which nicely fits
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9acc36f614750ae0424e2120f386e521
https://doi.org/10.1109/sispad.1999.799251
https://doi.org/10.1109/sispad.1999.799251
Publikováno v:
Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V.
Band-structure effects are incorporated in the framework of the Spherical-Harmonic Expansion (SHE) approximation of the Boltzmann Transport Equation (BTE) for electrons in silicon. The density of states (DOS) and the group velocity (GV) are modeled a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7e77ea43d58835bf470d054a6f2c3b9
https://doi.org/10.1109/nupad.1994.343492
https://doi.org/10.1109/nupad.1994.343492
Publikováno v:
1997 21st International Conference on Microelectronics. Proceedings.
We present here a comprehensive system for submicron-device simulation based on the hydrodynamic (HD) model and the expansion of the Boltzmann equation (BTE) in spherical harmonics (SHE). In the typical operating regime of semiconductor devices, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3518570d89a2df465c71f2db3158a3eb
https://doi.org/10.1109/icmel.1997.625177
https://doi.org/10.1109/icmel.1997.625177
Publikováno v:
Simulation of Semiconductor Processes and Devices 1998 ISBN: 9783709174159
In a spherical-harmonics expansion formulation of the semi-classical Boltzmann transport equation (bte) the influence of surface-scattering mechanisms on mobility are investigated, accounting for both global and local scattering mechanisms, with refe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c72e84ab12da28e9f21b71712e7f149
https://doi.org/10.1007/978-3-7091-6827-1_79
https://doi.org/10.1007/978-3-7091-6827-1_79
