Zobrazeno 1 - 10
of 27
pro vyhledávání: '"M.C. Frassanito"'
Autor:
A. Savini, M. Fusella, M. Esposito, V. Ardu, G. Benecchi, A. Bergantin, G.R. Borzi, S. Bresciani, E. Cagni, C. Carbonini, M. Casati, S. Clemente, R. Consorti, S. Cora, E. DeMartin, R. ElGawhary, M.D. Falco, D. Fedele, C. Fiandra, M.C. Frassanito, C. Garibaldi, G. Gasperi, F.R. Giglioli, G. Guidi, I. Ielo, V. Landoni, S. Magi, T. Malatesta, C. Marino, L. Masi, E. Moretti, S. Naccarato, B. Nardiello, R. Nigro, G. Pastore, M. Presello, V. Ravaglia, S. Russo, L. Strigari, S. Strolin, C. Talamonti, A. Vaiano, S. Vigorito, E. Villaggi, M. Stasi, P. Mancosu
Publikováno v:
Physica Medica. 56:163-164
Purpose Currently, most of the multicenter analyses on treatment planning rely on the extraction of selected data from the DVH of each plan. A grouped analysis can be biased due to different algorithms implemented in different TPSs used to generate t
Autor:
Anna Gallone, M.C. Frassanito, Antonia Mallardi, Vito Capozzi, Gerardo Palazzo, P. F. Biagi, Giuseppe Perna
Publikováno v:
Journal of luminescence 129 (2009): 44–49.
info:cnr-pdr/source/autori:Perna, G.; Frassanito, M. C.; Palazzo, G.; Gallone, A.; Mallardi, A.; Biagi, P. F.; Capozzi, V./titolo:Fluorescence spectroscopy of synthetic melanin in solution/doi:/rivista:Journal of luminescence/anno:2009/pagina_da:44/pagina_a:49/intervallo_pagine:44–49/volume:129
info:cnr-pdr/source/autori:Perna, G.; Frassanito, M. C.; Palazzo, G.; Gallone, A.; Mallardi, A.; Biagi, P. F.; Capozzi, V./titolo:Fluorescence spectroscopy of synthetic melanin in solution/doi:/rivista:Journal of luminescence/anno:2009/pagina_da:44/pagina_a:49/intervallo_pagine:44–49/volume:129
We report a detailed investigation of fluorescence properties of synthetic eumelanin pigment in solution. A complete set of fluorescence spectra in the near-UV and visible range is analysed. Excitation spectra at a few selected emission energies are
Autor:
Mauro Lomascolo, Pomarico Anna Angela, B. Potì, Adriana Passaseo, Maria Teresa Todaro, M. De Vittorio, M.C. Frassanito, R. Cingolani
Publikováno v:
physica status solidi (c). 1:589-593
In this work we have studied the role of excitons in two different low barrier metal–semiconductor–metal (MSM) GaN-based UV photodetectors at high temperature. The active material of the two MSM devices consists of bulk GaN grown by metal organic
Autor:
M.C. Frassanito, Domenico Boffoli, Claudia Piccoli, Nazzareno Capitanio, Vito Capozzi, Antonio Tabilio
Publikováno v:
Journal of microscopy. 229(Pt 3)
Summary The aim of this study was to characterize the local distribution and organization of the plasma membrane NADPH-oxidase (NOX) in human haematopoietic stem cell (HSC) by means of the fluorescence scanning near-field optical microscopy approach.
Autor:
Mauro Lomascolo, R. Cingolani, B. Potì, Pomarico Anna Angela, M.C. Frassanito, Maria Teresa Todaro, Adriana Passaseo, M. De Vittorio
Publikováno v:
Sensors and actuators. A, Physical
113 (2004): 329–333. doi:10.1016/j.sna.2004.04.016
info:cnr-pdr/source/autori:De Vittorio M, Poti B, Todaro MT, Frassanito MC, Pomarico A, Passaseo A, Lomascolo M, Cingolani R/titolo:High temperature characterization of GaN-based photodetectors/doi:10.1016%2Fj.sna.2004.04.016/rivista:Sensors and actuators. A, Physical (Print)/anno:2004/pagina_da:329/pagina_a:333/intervallo_pagine:329–333/volume:113
113 (2004): 329–333. doi:10.1016/j.sna.2004.04.016
info:cnr-pdr/source/autori:De Vittorio M, Poti B, Todaro MT, Frassanito MC, Pomarico A, Passaseo A, Lomascolo M, Cingolani R/titolo:High temperature characterization of GaN-based photodetectors/doi:10.1016%2Fj.sna.2004.04.016/rivista:Sensors and actuators. A, Physical (Print)/anno:2004/pagina_da:329/pagina_a:333/intervallo_pagine:329–333/volume:113
In this work we report on the high temperature characterization of two different interdigitated metal–semiconductor–metal (MSM) GaN-based photodetectors. The active material of the two MSM devices consists of bulk GaN grown by metal organic chemi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::93908696f5e451dfede6270b4c9b2d2a
https://hdl.handle.net/11587/300458
https://hdl.handle.net/11587/300458
Autor:
a) M. De Vittorio, B. Pot??, M.T. Todaro, M.C. Frassanito, A. Pomarico, A. Passaseo, R. Cingolani b) M. Lomascolo, c) M.T. Todaro
Publikováno v:
Sensors and actuators. A, Physical
113 (2004): 329–333.
info:cnr-pdr/source/autori:a) M. De Vittorio, B. Pot??, M.T. Todaro, M.C. Frassanito, A. Pomarico, A. Passaseo, R. Cingolani b) M. Lomascolo, c) M.T. Todaro/titolo:High temperature characterization of GaN based photodetector/doi:/rivista:Sensors and actuators. A, Physical (Print)/anno:2004/pagina_da:329/pagina_a:333/intervallo_pagine:329–333/volume:113
113 (2004): 329–333.
info:cnr-pdr/source/autori:a) M. De Vittorio, B. Pot??, M.T. Todaro, M.C. Frassanito, A. Pomarico, A. Passaseo, R. Cingolani b) M. Lomascolo, c) M.T. Todaro/titolo:High temperature characterization of GaN based photodetector/doi:/rivista:Sensors and actuators. A, Physical (Print)/anno:2004/pagina_da:329/pagina_a:333/intervallo_pagine:329–333/volume:113
In this work we report on the high temperature characterization of two different interdigitated metal-semiconductor-metal (MSM) GaN-based photodetectors. The active material of the two MSM devices consists of bulk GaN grown by metal organic chemical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::5b071983b64e0072a524e62f655ad837
https://publications.cnr.it/doc/269533
https://publications.cnr.it/doc/269533
Autor:
M.C. Frassanito, Mauro Lomascolo, Adriana Passaseo, M. De Vittorio, B. Potì, Maria Teresa Todaro, Pomarico Anna Angela, R. Cingolani
Publikováno v:
Electronics Letters 39 (2003): 1747–1749.
info:cnr-pdr/source/autori:Poti B., Todaro M. T., Frassanito M. C., Pomarico A., Passaseo A., Lomascolo M., Cingolani R., De Vittorio M./titolo:High responsivity GaN-based UV detectors/doi:/rivista:Electronics Letters/anno:2003/pagina_da:1747/pagina_a:1749/intervallo_pagine:1747–1749/volume:39
info:cnr-pdr/source/autori:Poti B., Todaro M. T., Frassanito M. C., Pomarico A., Passaseo A., Lomascolo M., Cingolani R., De Vittorio M./titolo:High responsivity GaN-based UV detectors/doi:/rivista:Electronics Letters/anno:2003/pagina_da:1747/pagina_a:1749/intervallo_pagine:1747–1749/volume:39
The high temperature. characterisation of low barrier metal-semiconductor-metal (MSM) GaN-bulk photodetectors is reported. A very high DC responsivity of 6.7 x 10(6) A/W at room temperature and of 1.4 x 10(6) A/W at 450 K was achieved at the waveleng
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d13fc39e93f7ef2e9571af5c053b4b0d
https://hdl.handle.net/11587/107224
https://hdl.handle.net/11587/107224
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