Zobrazeno 1 - 10
of 43
pro vyhledávání: '"M.C. Calvet"'
Autor:
M.C. Calvet, J.P. David, L. Bonora, Pascal Fouillat, Hugh J. Barnaby, Ph. Cazenave, P. Calvel, Ronald D. Schrimpf, Andre Touboul, X. Montagner
Publikováno v:
IEEE Transactions on Nuclear Science. 45:2577-2583
A gate controlled lateral PNP bipolar device has been designed in a commercial BiCMOS process to investigate its sensitivity to radiation-induced degradation. New experimental and simulated results concerning total dose effects are presented. The imp
Autor:
Pascal Fouillat, P. Calvel, M.C. Calvet, X. Montagner, Ronald D. Schrimpf, A. Touboui, R. Briand, Kenneth F. Galloway
Publikováno v:
IEEE Transactions on Nuclear Science. 45:1431-1437
A method to predict low dose rate degradation of bipolar transistors using high dose-rate, high temperature irradiation is evaluated, based on an analysis of four new rad-parameters that are introduced in the BJT SPICE model. This improved BJT model
Autor:
P. Calvel, Andre Touboul, R. Briand, Pascal Fouillat, Ronald D. Schrimpf, X. Montagner, M.C. Calvet, Kenneth F. Galloway
Publikováno v:
IEEE Transactions on Nuclear Science. 44:1922-1929
The effects of total dose on the SPICE model of bipolar junction transistors are investigated. The limitations of the standard Gummel-Poon model for simulating the radiation-induced excess base current are analyzed, and a new model based on an empiri
Autor:
Kenneth F. Galloway, P. Calvel, Kenneth A. LaBel, M.C. Calvet, Ronald D. Schrimpf, C.F. Wheatley, I. Mouret, Jeffrey L. Titus, M. Allenspach
Publikováno v:
IEEE Electron Device Letters. 17:163-165
The heavy-ion fluence required to induce Single-Event Gate Rupture (SEGR) in power MOSFETs is measured as a function of the drain bias, V/sub DS/, and as a function of the gate bias, V/sub GS/. These experiments reveal the abrupt nature of the SEGR-v
Autor:
R. Briand, Yann Deval, Pascal Fouillat, Andre Touboul, X. Montagner, J.P. David, L. Bonora, M.C. Calvet, P. Calvel
Publikováno v:
RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294).
This paper presents a design approach in order to deal with total-dose induced degradation with commercial IC processes. Devices behavior limitations are presented, and layout-based techniques are proposed to reduce bipolar transistors radiation sens
Publikováno v:
RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294).
This paper presents the results from in-flight measurements of single event upsets (SEU) in static random access memories (SRAM) caused by the atmospheric radiation environment at aircraft altitudes. The memory devices were carried on commercial airl
Autor:
J. Bourrieau, M.C. Calvet
Publikováno v:
Acta astronautica. 36(8-12)
Radiation hazard during previous manned space flights was not a critical problem as seen from monitoring on board MIR and the SHUTTLE. Future Martian and Lunar missions as well as flights on inclined or high altitude orbits around the Earth can be ex
Publikováno v:
International journal of developmental neuroscience : the official journal of the International Society for Developmental Neuroscience. 12(6)
The non-competitive N- methyl- d -aspartate antagonist cis-Pip/Me 1-[1-(2-thienyl)-2-methyl-cyclohexyl] piperidine (GK11) either in racemic(±) or (−) enantiomeric form has been investigated on survival of human fetal spinal cord cells in culture.
Autor:
M.C. Calvet, J. Calvet
Publikováno v:
Journal of neuroscience methods. 4(2)
A simple, useful and inexpensive device was designed and tested which allowed, under visual control at high magnification, large areas of a culture to be scanned without removing the microelectrodes inserted into remote parts of the nervous tissue. S
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