Dedicated random telegraph noise characterization of Ni/HfO2-based RRAM devices

Autor: Francesca Campabadal, Rosana Rodriguez, M.C. Acero, Javier Martin-Martinez, Montserrat Nafria, Xavier Aymerich, Mireia Bargallo Gonzalez

Publikováno v: Recercat. Dipósit de la Recerca de Catalunya
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Recercat: Dipósit de la Recerca de Catalunya
Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona
Digital.CSIC. Repositorio Institucional del CSIC

Trabajo presentado en la 19th Conference on Insulating Films on Semiconductors 2015, celebrado en Udine (Italia), del 29 de junio al 2 de julio de 2015
In this work, random telegraph noise (RTN) associated to discrete current fluctuations in the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6e29d0fd4ca6d639a86bbffe2026811f
http://hdl.handle.net/2072/407352

Advanced electrical characterization of atomic layer deposited Al2O3 MIS-based structures

Autor: Helena Castán, Salvador Dueñas, Mireia Bargallo Gonzalez, Héctor García, M.C. Acero, Francesca Campabadal

Publikováno v: 2017 Spanish Conference on Electron Devices (CDE).

The electrical properties of Al 2 O 3 -based metal-insulator-semiconductor capacitors have been investigated. Three different metal gate electrodes were used: two mid-gap metals (TiN and tungsten) and aluminum, a metal with a work function close to t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::17e68bc6aa6156f15c8c0534d98a4fc3
https://doi.org/10.1109/cde.2017.7905235

Resistive switching with bipolar characteristics in TiN/Ti/HfO2/W devices

Autor: Samuel Poblador, Francesca Campabadal, Mireia Bargallo Gonzalez, M.C. Acero

Publikováno v: 2017 Spanish Conference on Electron Devices (CDE).

In this work, TiN/Ti/HfO 2 /W devices have been fabricated and their resistive switching (RS) characteristics have been assessed. The analysis of the obtained results indicates an asymmetric bipolar RS behavior with two very well defined resistance s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3f933a7ef51cb1806170c85638e2e47d
https://doi.org/10.1109/cde.2017.7905217

Investigation of Filamentary Current Fluctuations Features in the High-Resistance State of Ni/HfO2-Based RRAM

Autor: Javier Martin-Martinez, Mireia Bargallo Gonzalez, Francesca Campabadal, Montserrat Nafria, M. Maestro, M.C. Acero

Publikováno v: Digital.CSIC. Repositorio Institucional del CSIC
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In this paper, the presence of filamentary current instabilities in the high resistance state of Ni/HfO2-based RRAM devices and their associated current fluctuations mechanisms are explored. After systematic measurements, the advanced weighted time-l

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::63ef51653454964f4ea13cda6629b46e
http://hdl.handle.net/10261/257207

Investigation of the resistive switching behavior in Ni/HfO2-based RRAM devices

Autor: Francesca Campabadal, M. Zabala, Mireia Bargallo Gonzalez, O. Beldarrain, M.C. Acero

Publikováno v: 2015 10th Spanish Conference on Electron Devices (CDE).

In this work, a systematic study of the electrical properties and the cycle-to-cycle variability in Ni/HfO 2 -based RRAM devices is presented. Besides the resistive switching behavior, attention is also given to the impact of temperature on device st

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1a8bc416f670912867019e24acf4beb0
https://doi.org/10.1109/cde.2015.7087499