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pro vyhledávání: '"M.B. Gonzlez"'
Autor:
S. Dueas, G. Gonzlez-Cordero, Francesca Campabadal, J.B. Roldn, F. Jimnez-Molinos, H. Garca, H. Castn, M.B. Gonzlez
Publikováno v:
Microelectronic Engineering. 178:26-29
A new model to account for variability in resistive memories is presented. It is included in a previous general current model that considers the main physical mechanisms involved in the conductive filament formation and disruption processes that lead
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76d340965ac245ae93e7bcb0c88c8620
https://doi.org/10.1016/j.mee.2017.04.019
https://doi.org/10.1016/j.mee.2017.04.019
