Zobrazeno 1 - 10
of 109
pro vyhledávání: '"M.B. Assouar"'
Autor:
Simon Gautier, P. L. Bonanno, Alexander Kazimirov, Abderrahim Ramdane, L. Le Gratiet, Nabila Maloufi, Jérôme Martin, W. H. Goh, Andrei Sirenko, Abdallah Ougazzaden, Tarik Moudakir, M.B. Assouar, Z.-H. Cai, Anthony Martinez
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 268:320-324
Highly relaxed GaN nanodots and submicron ridges have been selectively grown in the NSAG regime using MOVPE on lattice mismatched 6H–SiC and AlN substrates. 2D real space and 3D reciprocal space mapping was performed with a CCD detector using 10.4
Publikováno v:
Diamond and Related Materials. 17:1660-1665
A simple and direct synthesis method was used to grow silicon carbide nanofibers in CH4/H2 mixture on silicon substrates covered by Fe thin film catalyst using microwave plasma assisted chemical vapour deposition. The silicon source is the substrate
Autor:
Omar Elmazria, Boumediene Benyoucef, M.B. Assouar, Christophe Gatel, A. Fardeheb-Mammeri, J.-J. Fundenberger
Publikováno v:
Diamond and Related Materials. 17:1770-1774
AlN thin films are of continued interest for exciting acoustic waves for surface and bulk acoustic wave devices. This work reports on the growth and the characterisation of AlN films with the c-axis inclined. These films are of significant interest f
Autor:
P. Kirsch, D. Monéger, Omar Elmazria, Alix Gicquel, M.B. Assouar, Fabien Bénédic, P. Alnot, Ovidiu Brinza
Publikováno v:
Diamond and Related Materials. 17:804-808
Very high frequency surface acoustic wave (SAW) devices based on the AlN/diamond layered structure are fabricated by direct writing using e-beam lithography on the nucleation side of nanocrystalline diamond (NCD) films deposited by microwave plasma a
Publikováno v:
physica status solidi (a). 204:3085-3090
We report in this study, the growth of silicon carbide nanofibers on silicon substrates covered by Fe thin film catalyst using microwave plasma assisted chemical vapour deposition. The silicon source is the substrate itself. The growth morphology, mi
Publikováno v:
Integrated Ferroelectrics. 91:119-128
AlN films with c-axis oriented perpendicular to the surface were deposited on silicon substrates by reactive RF magnetron sputtering method, at various temperatures (without heating −400°C). The structural, morphological and optical properties of
Publikováno v:
Diamond and Related Materials. 16:1417-1420
The study of the effect of the deposition temperature on the surface acoustic wave (SAW) propagation velocity of aluminum nitride (AlN) films has been made using Brillouin spectroscopy. The AlN films were deposited using magnetron sputtering techniqu
Publikováno v:
Diamond and Related Materials. 16:1244-1249
In this paper we present some results obtained from transmission electron microscopy, selected area electron diffraction patterns and the electron energy loss spectroscopy of carbon nanostructures (CNSs) obtained by microwave plasma assisted chemical
Autor:
M.B. Assouar, Yacine Halfaya, Suresh Sundaram, Paul L. Voss, J. Y. Marteau, Chris Bishop, Jean-Paul Salvestrini, Y. El Gmili, Laetitia Pradere, Abdallah Ougazzaden
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2015, 106 (24), pp.243504. ⟨10.1063/1.4922803⟩
Applied Physics Letters, American Institute of Physics, 2015, 106 (24), pp.243504. ⟨10.1063/1.4922803⟩
International audience; We report a double Schottky junction gas sensor based on a BGaN/GaN superlattice and Pt contacts. NO2 is detected at concentrations from 4.5 to 450 ppm with current responsivity of 6.7 mA/(cm(2) x ppm) at 250 degrees C with a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b42e0d573a5302b5b9c2a12bd1ec2c4c
https://hal.archives-ouvertes.fr/hal-01170536
https://hal.archives-ouvertes.fr/hal-01170536
Publikováno v:
Integrated Ferroelectrics. 82:45-54
Polycrystalline aluminium nitride films were deposited on Si(100) substrates by RF reactive sputtering method. We have carried out experiments to evaluate the effect of stress in AlN thin films on the surface acoustic wave (SAW) velocity by studying