Zobrazeno 1 - 10
of 38
pro vyhledávání: '"M.A.Z. Rejman-Greene"'
Autor:
M.A.Z. Rejman-Greene, M.H. Lyons, S.J. Amin, P.J. Skevington, Graham J. Davies, M. A. G. Halliwell
Publikováno v:
Journal of Crystal Growth. 120:328-332
InP/InGaAs multiple quantum well structures with up to 200 periods have been grown by CBE. These structures exhibit exceptional lateral uniformity, measured as ±1 A in period, ±13 ppm in lattice mismatch and ±0.5 nm in wavelength across a 2 inch w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7df232d4c8dc4286c945bb758d528e8e
https://doi.org/10.1016/0022-0248(92)90412-c
https://doi.org/10.1016/0022-0248(92)90412-c
Autor:
B. R. White, M.A.Z. Rejman-Greene, Paul McKee, E.G. Scott, N. Barnes, Alan O'neill, Peter Healey, David Wood, R.P. Webb
Publikováno v:
Optical and Quantum Electronics. 24:S505-S516
An experimental 16-channel parallel interconnection system able to support 100 Mbits−1 per channel and an opto-electronic neural network operating at up to 50 Mbits−1 have been constructed to demonstrate the potential of optics in processing syst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd70432061358d5977fefb577cb6e545
https://doi.org/10.1007/bf00619515
https://doi.org/10.1007/bf00619515
Autor:
E.G. Scott, M.A.Z. Rejman-Greene
Publikováno v:
Journal of Crystal Growth. 111:1076-1079
Matched Stark effect MQW optical modulators in the InP/InGaAs materials system have been grown using double sided epitaxy (DSE) on both sides of a single InP wafer by gas source MBE. Coupled multi-quantum well stacks have been used to reduce the oper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d3f017e817a7c626431a529661177d0
https://doi.org/10.1016/0022-0248(91)91136-x
https://doi.org/10.1016/0022-0248(91)91136-x
Publikováno v:
Journal of Crystal Growth. 105:249-253
InGaAs/InP multi-quantum well layers, suitable for use as quantum confined Stark effect modulators, have been grown by gas source MBE. Detailed analysis of interface perfection has been obtained by multiple crystal X-ray diffraction techniques and lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e176f27393d7d68757751ebb63de529b
https://doi.org/10.1016/0022-0248(90)90371-q
https://doi.org/10.1016/0022-0248(90)90371-q
Autor:
E.G. Scott, M. Hodgson, R.P.S. Steward, Peter Healey, R.P. Webb, Paul McKee, David Wood, M.A.Z. Rejman-Greene
Publikováno v:
Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, Smart Pixels.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5aa6d44d9b63e8de6086af5624b84102
https://doi.org/10.1109/leosst.1992.697513
https://doi.org/10.1109/leosst.1992.697513
Autor:
Peter Healey, N. Barnes, E.G. Scott, David Wood, Alan O'neill, M.A.Z. Rejman-Greene, R.P. Webb, Paul McKee
Publikováno v:
Neural Networks for Vision, Speech and Natural Language ISBN: 9789401050418
We have seen in previous chapters that typical neural network models comprise large numbers of relatively simple processing elements (PEs), usually arranged in layers, with massive interconnectivity between the layers. The processing elements usually
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a0cc1135beca413b9b7dce002e88ace
https://doi.org/10.1007/978-94-011-2360-0_21
https://doi.org/10.1007/978-94-011-2360-0_21
Autor:
Alan O'neill, David Wood, N. Barnes, Geoff Scott, M.A.Z. Rejman-Greene, David William Smith, Paul McKee, Peter Healey, R.P. Webb
Publikováno v:
SPIE Proceedings.
Two dimensional arrays of InGaAsIJnP based multiple quantum well surface modulators driven by standard high-speed CMOS have been demonstrated in experimental parallel optical interconnect and artificial neural processing systems. Transition times wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe53a523071b79a572cb0205653d8764
https://doi.org/10.1117/12.25547
https://doi.org/10.1117/12.25547
Autor:
M.A.Z. Rejman-Greene, E.G. Scott
Publikováno v:
Electronics Letters. 26:946
Epitaxial growth of InGaAs/InP MQW structures on both sides of an InP substrate is used to enhance the performance of planar optical modulators to 3.8 dB for −10 V change in bias. 2×2 arrays of such devices, operating at 1.51 μm, are realised by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43d4d65e8027541497c2c87185a57891
https://doi.org/10.1049/el:19900617
https://doi.org/10.1049/el:19900617
Publikováno v:
Electronics Letters. 26:1126
A 4 × 4 planar array of MQW surface modulators driven by standard high-speed CMOS has been demonstrated in an experimental parallel-interconnect system. Transition times were fast enough for 100 Mbit/s operation and the potential exists to increase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1116808d002c8ace8640072820fd8f67
https://doi.org/10.1049/el:19900728
https://doi.org/10.1049/el:19900728
Autor:
Alan O'neill, N. Barnes, Peter Healey, Paul McKee, M.A.Z. Rejman-Greene, R.P. Webb, David Wood, E.G. Scott
Publikováno v:
Electronics Letters. 26:1110
The first opto-electronic neural network, employing InGaAs/InP based, multi-quantum well, surface modulator/detector arrays and operating at speeds above 10 Mbit/s is reported. The network uses a novel architecture that has a computer generated holog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39828ff01b6ef0bc097d2b1d48c4d2c1
https://doi.org/10.1049/el:19900718
https://doi.org/10.1049/el:19900718