Zobrazeno 1 - 10
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pro vyhledávání: '"M.A. Remennyi"'
Publikováno v:
Infrared Physics & Technology. 125:104301
Akademický článek
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Publikováno v:
Semiconductors. 53:139-149
The results of investigations of light-emitting diodes based on heterostructures with an InAs active region grown by liquid phase and metalorganic vapor-phase epitaxy over the last decade are reviewed. The near-field pattern, L–I and I–V characte
Publikováno v:
Infrared Physics and Technology
Infrared Physics and Technology, Elsevier, 2020, 111, pp.103460. ⟨10.1016/j.infrared.2020.103460⟩
Infrared Physics and Technology, Elsevier, 2020, 111, pp.103460. ⟨10.1016/j.infrared.2020.103460⟩
Low frequency photocurrent noise, as well as the forward current noise are studied for the first time in mid-infrared InAsSbP/InAs double heterostructure photodiodes at 100 K. Two types of photodiodes are identified. For the first type, the spectral
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7f35ded9f4ce00e51ef8a964e926be75
https://hal.archives-ouvertes.fr/hal-03151345
https://hal.archives-ouvertes.fr/hal-03151345
Publikováno v:
Semiconductor Science and Technology
Semiconductor Science and Technology, IOP Publishing, 2020, 35 (7), pp.075010. ⟨10.1088/1361-6641/ab8756⟩
Semiconductor Science and Technology, IOP Publishing, 2020, 35 (7), pp.075010. ⟨10.1088/1361-6641/ab8756⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::beb4d4522379b84f66845f7752369c42
https://hal.archives-ouvertes.fr/hal-03151302
https://hal.archives-ouvertes.fr/hal-03151302
Autor:
Vladislav Khayrudinov, Prokhor A. Alekseev, Harri Lipsanen, B. A. Matveev, Vidur Raj, Tuomas Haggren, M.A. Remennyi
Publikováno v:
ACS Nano
Semiconductor nanowires are routinely grown on high-priced crystalline substrates as it is extremely challenging to grow directly on plastics and flexible substrates due to high-temperature requirements and substrate preparation. At the same time, pl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d54083df007c80de12c7bbf05d922894
https://aaltodoc.aalto.fi/handle/123456789/45570
https://aaltodoc.aalto.fi/handle/123456789/45570
Publikováno v:
Semiconductor Science and Technology
Semiconductor Science and Technology, IOP Publishing, 2019, 34 (10), pp.105015. ⟨10.1088/1361-6641/ab3c3e⟩
Semiconductor Science and Technology, IOP Publishing, 2019, 34 (10), pp.105015. ⟨10.1088/1361-6641/ab3c3e⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d6d07f5389db3d672818faaea21fac97
https://hal.archives-ouvertes.fr/hal-03151296
https://hal.archives-ouvertes.fr/hal-03151296
Autor:
S. A. Karandashev, A. A. Lavrov, M.A. Remennyi, B. A. Matveev, N.M. Stus, N. D. Il’inskaya, A.A. Usikova
Publikováno v:
Infrared Physics & Technology. 88:223-227
Autor:
M.A. Remennyi, N. Dyakonova, M.E. Levinshtein, S. A. Karandashev, B. A. Matveev, A.A. Usikova
Publikováno v:
Infrared Physics & Technology. 117:103867
Low frequency noise in P-InAsSbP/n-InAs infrared light emitting diode- photodiode pairs is investigated for the first time at 300 K. It is shown that photocurrent fluctuations under LED illumination are smaller than photocurrent fluctuations under a
Autor:
N.M. Stus, B. A. Matveev, Pavel N. Brunkov, A.A. Usikova, M.A. Remennyi, A. A. Lavrov, S. A. Karandashev, N. D. Il’inskaya
Publikováno v:
Infrared Physics & Technology. 78:249-253
P-InAsSbP/n-InAs/n+-InAs single heterostructure photodiode monolithic array with linear impurity distribution in the space charge region and “bulk” n-InAs absorbing layer has been fabricated by the LPE method and studied for the first time. Unlik