Zobrazeno 1 - 10
of 57
pro vyhledávání: '"M.A. Kulakov"'
Publikováno v:
Shipping & Navigation. 28:103-108
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39689f67675b0364b4c322adff7feb17
https://doi.org/10.31653/2306-5761.27.2018.103-108
https://doi.org/10.31653/2306-5761.27.2018.103-108
Autor:
M.A. Kulakov
Publikováno v:
Automation of ship technical facilities. 23:51-56
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68192ad529f018e3c71f12c81a7a2075
https://doi.org/10.31653/1819-3293-2017-1-23-51-56
https://doi.org/10.31653/1819-3293-2017-1-23-51-56
Publikováno v:
Surface Science. 382:L658-L665
The atomic structure of SiC(0001)C surface of the 6H polytype has been studied in UHV by scanning tunnelling microscopy, low energy electron diffraction and Auger electron spectroscopy. A number of different reconstructions could be reproducibly prep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9475bfad9f64b465bf9701eef3945df
https://doi.org/10.1016/s0039-6028(97)00084-8
https://doi.org/10.1016/s0039-6028(97)00084-8
Publikováno v:
Surface Science. 375:195-202
Large unit cells of dimer-adatom-stacking-fault (DAS) structure and related (2 × 2) and c(4 × 2) reconstructions have been prepared by low temperature solid phase epitaxy and observed by scanning tunnelling microscopy. The development of larger uni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c870a94f56bbfd142e0d1ac13d642007
https://doi.org/10.1016/s0039-6028(96)01291-5
https://doi.org/10.1016/s0039-6028(96)01291-5
Publikováno v:
Surface Science. 376:L414-L418
A simple method of cooling rate determination of Si samples in a radiative quench is presented. The method relies on monitoring of the LEED pattern of the Si(111) sample during quench and exact determination of the onset of the 1 × 1 – 7 × 7 phas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c88e59d42186ac67d03ff0f523622ef
https://doi.org/10.1016/s0039-6028(96)01589-0
https://doi.org/10.1016/s0039-6028(96)01589-0
Autor:
M.A. Kulakov
Publikováno v:
Surface Science. 372:L266-L270
Surface morphology of the Si(111) samples quenched with a cooling rate of about 350°C s −1 was studied by scanning tunnelling microscopy. In all quench experiments the (7 × 7) reconstruction was the main structure observed. No traces of other str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b124bd3b7353a18b46a2de54618df81e
https://doi.org/10.1016/s0039-6028(96)01257-5
https://doi.org/10.1016/s0039-6028(96)01257-5
Publikováno v:
Thin Solid Films. 294:88-92
Solid-phase epitaxy has been performed on Si(100) and Si(111) surfaces at substrate temperatures in the range of 350–650 °C and for film thickness up to a few monolayers. The features of the epitaxial films were acquired by scanning tunnelling mic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::617a1f6ed87a202083c099bffb13bccc
https://doi.org/10.1016/s0040-6090(96)09253-x
https://doi.org/10.1016/s0040-6090(96)09253-x
Publikováno v:
Applied Surface Science. 103:443-449
Scanning tunnelling microscopy is used to study the structure of the B Si(100) surface at low boron coverage, the surface being prepared by high-temperature annealing of heavily B-doped Si(100) samples. The surface reproducibly shows features which a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67eb89d73b495756c792bb3a05bc8e10
https://doi.org/10.1016/s0169-4332(96)00542-9
https://doi.org/10.1016/s0169-4332(96)00542-9
Publikováno v:
Surface Science. 369:L131-L135
New features of the C-type defects on the Si(100) surface have been found by a scanning tunnelling microscope. The depressions of these defects appear to be surface vacancies. Two protrusions of most C-type defects are actually not equal and the smal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b0a6a8f69cd5889ebf143f39798844b
https://doi.org/10.1016/s0039-6028(96)01129-6
https://doi.org/10.1016/s0039-6028(96)01129-6
Publikováno v:
Surface Science. 369:69-75
c(4 × 4) reconstructions have been prepared by 600°C annealing a number of different Si(100) surfaces upon which about one monolayer thick Si films had been deposited at several temperatures. Nucleation, extension and disappearance of these structu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bade63f2ee4d2b5fba484f42793bf1e6
https://doi.org/10.1016/s0039-6028(96)00925-9
https://doi.org/10.1016/s0039-6028(96)00925-9