Zobrazeno 1 - 10
of 49
pro vyhledávání: '"M.-T. Dau"'
Autor:
S. Oyarzún, A. K. Nandy, F. Rortais, J.-C. Rojas-Sánchez, M.-T. Dau, P. Noël, P. Laczkowski, S. Pouget, H. Okuno, L. Vila, C. Vergnaud, C. Beigné, A. Marty, J.-P. Attané, S. Gambarelli, J.-M. George, H. Jaffrès, S. Blügel, M. Jamet
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-9 (2016)
Engineering the interaction between spin and charge is important for the creation of spintronics devices. Here, the authors show that the Rashba effect at a single crystalline Fe/Ge(111) interface produces enhanced spin-charge conversion, which could
Externí odkaz:
https://doaj.org/article/4e7a0d52402845b5b59c24b5655ea43c
Autor:
T. Guillet, A. Marty, C. Beigné, C. Vergnaud, M.-T. Dau, P. Noël, J. Frigerio, G. Isella, M. Jamet
Publikováno v:
AIP Advances, Vol 8, Iss 11, Pp 115125-115125-11 (2018)
Topological insulators (TIs) like Bi2Se3 are a class of material with topologically protected surface states in which spin-momentum locking may enable spin-polarized and defect-tolerant transport. In this work, we achieved the epitaxial growth of Bi2
Externí odkaz:
https://doaj.org/article/4d04dc2d1d2347dc8147cff0e57d6993
Autor:
Benjamin Grévin, Y. Almadori, Pascal Pochet, C. Vergnaud, Bérangère Hyot, C Paillet, Timotée Journot, M.-T. Dau, Yannick J. Dappe, Matthieu Jamet
Publikováno v:
Nanotechnology
Nanotechnology, 2020, 31 (25), pp.255709. ⟨10.1088/1361-6528/ab8083⟩
Nanotechnology, Institute of Physics, 2020, 31 (25), pp.255709. ⟨10.1088/1361-6528/ab8083⟩
Nanotechnology, 2020, 31 (25), pp.255709. ⟨10.1088/1361-6528/ab8083⟩
Nanotechnology, Institute of Physics, 2020, 31 (25), pp.255709. ⟨10.1088/1361-6528/ab8083⟩
International audience; We report on Kelvin Probe Force Microscopy (KPFM) and Density Functional Theory (DFT) investigations of charge transfers in vertical heterojunctions between tungsten diselenide (WSe2) layers and graphene on silicon carbide sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::35bb07eea4bd47e7502a133ef0c74d9f
https://hal.science/hal-02989896/file/BGREVIN-draft.pdf
https://hal.science/hal-02989896/file/BGREVIN-draft.pdf
Autor:
Christophe Licitra, C. Vergnaud, M.-T. Dau, Benjamin Grévin, Hanako Okuno, Matthieu Jamet, Alain Marty
Publikováno v:
Nanotechnology
Nanotechnology, 2020, 31 (25), pp.255602. ⟨10.1088/1361-6528/ab80fe⟩
Nanotechnology, Institute of Physics, 2020, 31 (25), pp.255602. ⟨10.1088/1361-6528/ab80fe⟩
Nanotechnology, 2020, 31 (25), pp.255602. ⟨10.1088/1361-6528/ab80fe⟩
Nanotechnology, Institute of Physics, 2020, 31 (25), pp.255602. ⟨10.1088/1361-6528/ab80fe⟩
The search for high-quality transition metal dichalcogenides mono- and multi-layers grown on large areas is still a very active field of investigation. Here, we use molecular beam epitaxy to grow WSe2 on 15 × 15 mm large mica in the van der Waals re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bad25d00d0b543e3191e591d710184cb
https://hal.science/hal-02990159
https://hal.science/hal-02990159
Autor:
Y J, Dappe, Y, Almadori, M T, Dau, C, Vergnaud, M, Jamet, C, Paillet, T, Journot, B, Hyot, P, Pochet, B, Grévin
Publikováno v:
Nanotechnology. 31(25)
We report on Kelvin probe force microscopy (KPFM) and density functional theory (DFT) investigations of charge transfers in vertical heterojunctions between tungsten diselenide (WSe
Autor:
C. Vergnaud, Giovanni Isella, Matthieu Jamet, Jacopo Frigerio, Paul Noël, T. Guillet, M.-T. Dau, Alain Marty, C. Beigné
Publikováno v:
AIP Advances
AIP Advances, 2018, 8 (11), pp.115125. ⟨10.1063/1.5048547⟩
AIP Advances, American Institute of Physics-AIP Publishing LLC, 2018, 8 (11), pp.115125. ⟨10.1063/1.5048547⟩
AIP Advances, Vol 8, Iss 11, Pp 115125-115125-11 (2018)
AIP Advances, 2018, 8 (11), pp.115125. ⟨10.1063/1.5048547⟩
AIP Advances, American Institute of Physics-AIP Publishing LLC, 2018, 8 (11), pp.115125. ⟨10.1063/1.5048547⟩
AIP Advances, Vol 8, Iss 11, Pp 115125-115125-11 (2018)
Topological insulators (TIs) like Bi$_2$Se$_3$ are a class of material with topologically protected surface states in which spin-momentum locking may enable spin-polarized and defect-tolerant transport. In this work, we achieved the epitaxial growth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5ebc318567c0bcd241b6e44ddff65881
http://hdl.handle.net/11311/1113080
http://hdl.handle.net/11311/1113080
Autor:
T. Le Quang, Pierre Mallet, Matthieu Jamet, M.-T. Dau, K. Nogajewski, Marek Potemski, V. Cherkez, Jean-Yves Veuillen
Publikováno v:
2D Materials
2D Materials, 2017, 4 (3), pp.035019. ⟨10.1088/2053-1583/aa7b03⟩
2D Materials, IOP Publishing, 2017, 4 (3), pp.035019. ⟨10.1088/2053-1583/aa7b03⟩
2D Materials, 2017, 4 (3), pp.035019. ⟨10.1088/2053-1583/aa7b03⟩
2D Materials, IOP Publishing, 2017, 4 (3), pp.035019. ⟨10.1088/2053-1583/aa7b03⟩
We have investigated the electronic properties of two-dimensional (2D) transition metal dichalcogenides (TMDs), namely trilayer WSe2 and monolayer MoSe2, deposited on epitaxial graphene on silicon carbide, by using scanning tunneling microscopy and s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b59838471bbd923f62fb90f8ff57f33
https://hal.science/hal-01741679
https://hal.science/hal-01741679
Autor:
Olivier Renault, Edith Bellet-Amalric, H. Boukari, F. Rortais, M.-T. Dau, M. Jamet, Carlos Alvarez, Alain Marty, C. Beigné, Pascal Pochet, V. Guigoz, C. Vergnaud, Hanako Okuno
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2017, 110 (1), pp.011909. ⟨10.1063/1.4973519⟩
Applied Physics Letters, 2017, 110 (1), pp.011909. ⟨10.1063/1.4973519⟩
Applied Physics Letters, American Institute of Physics, 2017, 110 (1), pp.011909. ⟨10.1063/1.4973519⟩
Applied Physics Letters, 2017, 110 (1), pp.011909. ⟨10.1063/1.4973519⟩
Molecular beam epitaxy technique has been used to deposit a single layer and a bilayer of MoSe 2 on sapphire. Extensive characterizations including in-situ and ex-situ measurements show that the layered MoSe 2 grows in a scalable manner on the substr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::84ab9dde069e41c2208a38eecc959640
https://hal.archives-ouvertes.fr/hal-01664036/file/DauMinhTuan-2017_millimeterScale.pdf
https://hal.archives-ouvertes.fr/hal-01664036/file/DauMinhTuan-2017_millimeterScale.pdf
Autor:
F. Rortais, Serge Gambarelli, Stefan Blügel, Jean-Philippe Attané, Stéphanie Pouget, Hanako Okuno, Matthieu Jamet, Paul Noël, P. Laczkowski, C. Vergnaud, Laurent Vila, Juan-Carlos Rojas-Sánchez, M.-T. Dau, Ashis Kumar Nandy, Alain Marty, C. Beigné, Henri Jaffrès, J.-M. George, Simón Oyarzún
Publikováno v:
Nature Communications
Nature Communications, 2016, 7, ⟨10.1038/ncomms13857⟩
Nature Communications, Vol 7, Iss 1, Pp 1-9 (2016)
Nature Communications, Nature Publishing Group, 2016, 7, ⟨10.1038/ncomms13857⟩
Nature Communications, 2016, 7, ⟨10.1038/ncomms13857⟩
Nature Communications, Vol 7, Iss 1, Pp 1-9 (2016)
Nature Communications, Nature Publishing Group, 2016, 7, ⟨10.1038/ncomms13857⟩
The spin–orbit coupling relating the electron spin and momentum allows for spin generation, detection and manipulation. It thus fulfils the three basic functions of the spin field-effect transistor. However, the spin Hall effect in bulk germanium i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dc33cd4f8cfa47c2361a156a83e55713
https://hal.science/hal-01614036
https://hal.science/hal-01614036
Autor:
Matthieu Jamet, Lisa Michez, A. Glachant, S.F. Olive-Méndez, J. Derrien, M. T. Dau, V. Le Thanh, A. Barski, A. Watanabe, Aurélie Spiesser
Publikováno v:
Thin Solid Films. 518:S113-S117
We report on the structural and magnetic properties of epitaxial Mn 5 Ge 3 films grown by molecular beam epitaxy (MBE) on Ge(111) substrates with film thicknesses ranging from 5 to ∼ 185 nm. It is shown that epitaxial Mn 5 Ge 3 films with a thickne