Zobrazeno 1 - 10
of 121
pro vyhledávání: '"M.-O. Ruault"'
Publikováno v:
Solid State Phenomena. :133-138
The paper presents the results of experimental in-situ observations of cobalt disilicide nucleation in Co+ implanted silicon and ab initio simulations of energies of small cobalt and cobaltvacancy clusters. Based on these results, microscopic nucleat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8300b6f71a907e8dee43fc98526df922
https://doi.org/10.4028/www.scientific.net/ssp.108-109.133
https://doi.org/10.4028/www.scientific.net/ssp.108-109.133
Publikováno v:
Solid State Phenomena. :291-296
We implanted 300keV Xenon in silicon oxide at doses ranging from 1x1016 to 5x1016/cm2. For the first time, we reported the formation and the thermal evolution of bubbles/cavities in SiO2. Characterization by cross-section transmission electron micros
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20c591488e86233c3f888c10c57f4f5f
https://doi.org/10.4028/www.scientific.net/ssp.108-109.291
https://doi.org/10.4028/www.scientific.net/ssp.108-109.291
Publikováno v:
Solid State Phenomena. :337-342
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b86b211c3461cb80068d1f12b1d2b83f
https://doi.org/10.4028/www.scientific.net/ssp.95-96.337
https://doi.org/10.4028/www.scientific.net/ssp.95-96.337
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 206:912-915
Nanocavities of diameter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bbe860264866aef8fe07aa2865764ff
https://doi.org/10.1016/s0168-583x(03)00860-7
https://doi.org/10.1016/s0168-583x(03)00860-7
Autor:
Vladimir A. Volodin, M. O. Ruault, V. G. Kesler, A. F. Leier, S. G. Yanovskaya, G. A. Kachurin
Publikováno v:
Semiconductors
Semiconductors, 2002, 36, pp.647-651
Semiconductors, 2002, 36, pp.647-651
The formation of silicon nanocrystals in SiO2 layers implanted with Si ions was investigated by Raman scattering, X-ray photoelectron spectroscopy, and photoluminescence. The excess Si concentration was varied between 3 and 14 at. %. It was found tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5485f53572934e087fa0fe8bd810199b
https://doi.org/10.1134/1.1485663
https://doi.org/10.1134/1.1485663
Autor:
O. Kaitasov, G. Marrakchi, J. Crestou, Georges Bremond, M. Hage-Ali, Alain Lusson, A. Zerrai, Robert Triboulet, M.‐O. Ruault, Karim Cherkaoui, P. Fougeres, J.M. Koebel, S. Hassan, Paul Siffert, Rahma Adhiri
Publikováno v:
Journal of Crystal Growth. :1313-1318
Cd x Zn 1− x Te crystals grown by high-pressure Bridgman are promising for nuclear detection and are already widely used and studied for this application. Phase precipitation is identified for the first time in such HPB grown crystals, more or less
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f0cf4d1b071bd80181c6d45702a3c75
https://doi.org/10.1016/s0022-0248(98)80271-6
https://doi.org/10.1016/s0022-0248(98)80271-6
Autor:
Franck Fortuna, M.-O. Ruault, M.-A. Nguyen, Vladimir A. Borodin, Maria Ganchenkova, Marquis A. Kirk
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2012, 112, pp.123504. ⟨10.1063/1.4769213⟩
Journal of Applied Physics, American Institute of Physics, 2012, 112, pp.123504. ⟨10.1063/1.4769213⟩
In this paper, we show a way to control cobalt disilicide precipitation during Co ion implantation at high temperatures (650 °C) by affecting radiation defects involved in precipitate nucleation and growth. We demonstrate that the relative shares of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::df71ff134ac5e8a2be56994157284538
http://hal.in2p3.fr/in2p3-00773567
http://hal.in2p3.fr/in2p3-00773567
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 84:135-138
The control of buried suicide layer interfaces requires a systematic study of their formation conditions (implantation temperature, sample orientation, post-annealing conditions). At stoichiometric concentration, the layer roughness stems from the fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67600091a0bd59c8e7dd3741e7a6ffd7
https://doi.org/10.1016/0168-583x(94)95741-x
https://doi.org/10.1016/0168-583x(94)95741-x
Publikováno v:
Applied Physics Letters. 81:2617-2619
Nanocavities were formed in Si substrates by conventional H implantation and thermal annealing, after which the samples were amorphized by Si ion irradiation. The size evolution of the nanocavities was monitored in situ during further ion irradiation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81e6b256a2be894b848c5af535d66e88
https://doi.org/10.1063/1.1509854
https://doi.org/10.1063/1.1509854
Publikováno v:
Applied Surface Science
Applied Surface Science, Elsevier, 1993, 73, pp.264-267
Applied Surface Science, Elsevier, 1993, 73, pp.264-267
By first growing NiSi 2 precipitates in amorphous Si(a-Si) and then irradiating with a 150 keV Si beam, we have studied ion beam induced epitaxial crystallization (IBIEC) of Si initiated at the a-Si/NiSi 2 precipitate interface. We confirm our previo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9699691342494be8b3e6575bbbc73485
https://doi.org/10.1016/0169-4332(93)90177-d
https://doi.org/10.1016/0169-4332(93)90177-d