Zobrazeno 1 - 10
of 89
pro vyhledávání: '"M.-L Locatelli"'
Autor:
S. Diaham, M.-L. Locatelli
Publikováno v:
IEEE Transactions on Dielectrics and Electrical Insulation. 22:3053-3058
The dielectric properties of a novel high-glass transition polyamide-imide (hTg-PAI, Tg=333 °C) are investigated for its high temperature use as an insulating material in the range above 250 °C in order to extend the limit of conventional PAI (c-PA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddce613dabca94e0317a2725ff64839b
https://doi.org/10.1109/tdei.2015.004925
https://doi.org/10.1109/tdei.2015.004925
Publikováno v:
Scopus-Elsevier
In order to take the full advantage of the high-temperature SiC and GaN operating power devices, package materials able to withstand high-temperature storage and large thermal cycles are required. However, a survey of the commercially available silic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b54bfd82cdbfb926a2198068f9afdc80
https://doi.org/10.4071/hiten-session6-paper6_6
https://doi.org/10.4071/hiten-session6-paper6_6
Publikováno v:
Scopus-Elsevier
An interesting way to improve high temperature polyimides (PI) electrical properties by filling it with boron nitride nanoparticles (BN) is proposed in this study. The filler content (from 0 to 60 vol.%) and the average diameter size (35 nm and 120 n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::04d127af5643d095fe04e8767cec9409
https://doi.org/10.4071/hiten-session3a-paper3a_3
https://doi.org/10.4071/hiten-session3a-paper3a_3
Akademický článek
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Publikováno v:
2016 IEEE International Conference on Dielectrics (ICD).
The influence of silicon nitride (Si 3 N 4 ) nanoparticles is studied on the DC dielectric strength of an epoxy-based nanocomposite. Si 3 N 4 nanofillers are interesting due to good both electrical insulation and thermal conduction properties. To obt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3770e3c0164896008eb95e78c9754eb
https://doi.org/10.1109/icd.2016.7547546
https://doi.org/10.1109/icd.2016.7547546
Publikováno v:
2013 IEEE International Conference on Solid Dielectrics (ICSD).
High temperature dielectric relaxation spectroscopy (DRS) experiments have been performed on MIS (metal-insulator-semiconductor), MOS (metal-oxide-semiconductor) single-layer and MIOS (metal-insulator-oxide-semiconductor) double-layer structures, whe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23f13402f89da64846e0797fd1adce20
https://doi.org/10.1109/icsd.2013.6619716
https://doi.org/10.1109/icsd.2013.6619716
Publikováno v:
2013 IEEE International Conference on Solid Dielectrics (ICSD).
In this paper, transient current characteristics for fluorinated parylene (PA-HT) films are investigated in the temperature range between 200°C and 350°C as a function of the electric field, material thickness and electrode polarity using a non sym
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76e14e6c5bc6b15a202ac2a78e87ad56
https://doi.org/10.1109/icsd.2013.6619668
https://doi.org/10.1109/icsd.2013.6619668
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2012, 59 (3), pp.761-769. ⟨10.1109/TED.2011.2181390⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2012, 59 (3), pp.761-769. ⟨10.1109/TED.2011.2181390⟩
International audience; Silicon carbide (SiC) power devices can operate at much higher junction temperature than those made of silicon. However, this does not mean that SiC devices can operate without a good cooling system. To demonstrate this, the m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0168e0a143a052f7e70df85a791d6601
https://hal.archives-ouvertes.fr/hal-00672440/document
https://hal.archives-ouvertes.fr/hal-00672440/document
Publikováno v:
EPE Journal. 4:43-46
The use of silicon as the basic semiconductor for power electronics sets a limitation for the rise in device operating temperature. The great increase in leakage currents is a major obstacle for th...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55d7d0fac9eb8e385ec4c7facd2af0bc
https://doi.org/10.1080/09398368.1994.11463335
https://doi.org/10.1080/09398368.1994.11463335
Publikováno v:
2011 - 14th International Symposium on Electrets.
In summary, the effect of film thicknesses between 1.4 and 49.4 µm on the MWS relaxation in PA-F polymer films have been studied by broadband dielectric spectroscopy in wide temperature (20 °C to 400 °C) and frequency (100 mHz to 1 MHz) ranges. At
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95534e46028799d9d0f3782312b2d703
https://doi.org/10.1109/ise.2011.6085017
https://doi.org/10.1109/ise.2011.6085017