Zobrazeno 1 - 10
of 81
pro vyhledávání: '"M.-C. Calvet"'
Autor:
F.W. Sexton, J.-M. Palau, B. Sagnes, Frédéric Saigné, Paul E. Dodd, K. Castellani-Coulie, M.-C. Calvet
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2004, 51 (5), pp.2799-2804. ⟨10.1109/TNS.2004.835076⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2004, 51 (5), pp.2799-2804. ⟨10.1109/TNS.2004.835076⟩
International audience; Silicon on insulator static random-access memory cell sensitivity to single event upset is studied. Currents and sensitive regions are then considered. Because of the buried oxide, the main part of these results appears to be
Publikováno v:
IEEE Transactions on Nuclear Science. 48:1946-1952
Academic 128/spl times/128 bit structures are simulated to study soft error cross sections induced by high-energy nucleons (n/p) in SRAM memories. The distributions of secondary ions are obtained by the nuclear high energy transport code and analyzed
Publikováno v:
IEEE Transactions on Nuclear Science. 48:1960-1965
This paper presents single-event upset cross-sections obtained with pions for a set of SRAMs/DRAMs from different generations. The experimental results show that pions are not more efficient than protons in creating upsets. Predictions using the two-
Publikováno v:
IEEE Transactions on Nuclear Science. 47:2580-2585
Neutron reactions with silicon nuclei can be responsible for much of the soft errors rate (SER) observed, for instance, in high density memories. The nuclear reactions create ionizing particles that then can induce charge collection at sensitive node
Publikováno v:
IEEE Transactions on Nuclear Science. 46:1410-1414
A device simulator is used to analyze the heavy ion induced failure mechanism in insulated gate bipolar transistors (IGBTs) and to investigate hardening solutions. Single event latchup was already identified as the failure mechanism. Lateral and vert
Publikováno v:
IEEE Transactions on Nuclear Science. 45:2915-2920
A new approach for SEU rate prediction in components submitted to neutron environment is presented. The method aims to take into account the characteristics of the secondary particles in terms of electrical effect. So, in addition to the critical ene
Autor:
J. Garnier, J.-M. Palau, C. Sudre, C. Detcheverry, J. Gasiot, Eric Lorfevre, Robert Ecoffet, C. Dachs, M.-C. Calvet
Publikováno v:
IEEE Transactions on Nuclear Science. 45:1624-1627
Heavy ion induced burnout is reported, for the first time, in different parts of a VIP. A 2D-simulation investigation allows a better understanding of this phenomenon and shows the importance of the epi-substrate junction parameters in the SEB occurr
Autor:
Eric Lorfevre, C. Dachs, Robert Ecoffet, C. Detcheverry, M.-C. Calvet, J.-M. Palau, J. Gasiot, F. Roubaud
Publikováno v:
IEEE Transactions on Nuclear Science. 44:2353-2357
Heavy ion induced destructive failures are reported in N-channel power IGBTs. For the first time, an experimental and 2D simulation investigation shows that latchup is involved in the triggering of the device.
Autor:
C. Poivey, P. Simon, O. Notebaert, Robert Ecoffet, T. Carriere, J.M. Salle, B. Steiger, J. Beaucour, M.-C. Calvet, B. Cadot, P. Garnier, Francoise Bezerra
Publikováno v:
IEEE Transactions on Nuclear Science. 43:886-892
The ARIANE5 On Board Computer (OBC) and Inertial Reference System (SRI) are based on Motorola MC68020 processor and MC68882 coprocessor. The SRI data acquisition board also uses the DSP TMS320C25 from Texas Instruments. These devices were characteriz
Autor:
Ronald D. Schrimpf, M. Allenspach, Jeffrey L. Titus, P. Calvel, Ken LaBel, I. Mouret, C.F. Wheatley, M.-C. Calvet, Kenneth F. Galloway, P. Tastet
Publikováno v:
IEEE Transactions on Nuclear Science. 43:936-943
The temperature and angular dependence of Single-Event Gate Rupture (SEGR) experiments, conducted on power DMOS transistors, show that a normal incident angle favors SEGR and elevated temperature is insignificant. Both the oxide and substrate respons