Zobrazeno 1 - 10
of 78
pro vyhledávání: '"M. Zoaeter"'
Publikováno v:
Active and Passive Electronic Components, Vol 25, Iss 3, Pp 215-223 (2002)
The use of VDMOS transistor under certain functional stress conditions produces a modification of its physical and electrical properties. This paper explores the physical analysis and SPICE simulation of the degradation effects related to the compone
Externí odkaz:
https://doaj.org/article/75e6c6943e63408da2daeffec456d3ee
Publikováno v:
Composites Science and Technology
Composites Science and Technology, Elsevier, 2009, 69 (1), pp.111-116. ⟨10.1016/j.compscitech.2007.10.048⟩
Composites Science and Technology, Elsevier, 2009, 69 (1), pp.111-116. ⟨10.1016/j.compscitech.2007.10.048⟩
This study proposes an analytical and numerical model, for the prediction of mechanical properties of orthogonal 3D reinforcement composite materials, taking into account their structural parameters (mechanical properties of the components and geomet
Publikováno v:
Microelectronics Reliability. 47:1406-1410
This paper reports the effects of high electric field stress (HEFS) and positive bias temperature instability (PBTI) in threshold voltage, input and Miller capacitances of N − channel power VDMOSFETs. The procedure used for this study is based on t
Publikováno v:
Physica B: Condensed Matter. 396:192-198
We present first-principles calculations of the structural, electronic and thermodynamic properties of rock-salt AgClxBr1−x alloys by application of the full potential linearized augmented plane wave (FP-LAPW) method. We use both Perdew–Burke–E
Publikováno v:
Microelectronics Journal. 38:727-734
This paper reports the effects of bias temperature stress (positive and negative bias temperature instabilites, PBTI-NBTI) on threshold voltage, input capacitance and Miller capacitance of N-Channel Power MOSFET. The device is stressed with gate volt
Publikováno v:
Physica B: Condensed Matter. 392:309-317
We present the results of a theoretical study of the structural and optoelectronic properties of silver halides AgCl and AgBr, using the full-potential linearized augmented plane wave (FP-LAPW). In this approach, the local density approximation (LDA)
Publikováno v:
Materials Letters. 61:1178-1182
The structural and electronic properties of Zn 1− x Mg x S y Se 1− y quaternary alloys have been investigated using the full potential-linearized augmented plane wave (FP-LAPW) method within density functional theory (DFT). We used the generalize
Publikováno v:
Materials Science and Engineering: B. :335-340
Using a two-dimensional simulator, the effect of the thermal stress on static and dynamic vertical double-diffusion metal oxide semiconductor (VDMOS) characteristics have been investigated. The use of the device under certain thermal stress condition
Publikováno v:
International Journal of Modern Physics B. 19:4081-4092
The ground state properties and the structural phase transformation of tin dioxide ( SnO 2) have been investigated using first principle full potential-linearized augmented plane wave (FP-LAPW) method within density functional theory (DFT). We used l
Publikováno v:
Physica B: Condensed Matter. 363:82-87
Using the full potential linearized augmented plane wave (FP-LAPW) method we present the structural and electronic properties of Tellurium in the BCC phase at high pressure. Apart from the electronic band structure in the BCC phase, the density of st