Zobrazeno 1 - 10
of 66
pro vyhledávání: '"M. Zigone"'
Autor:
M. Zigone, Juan P. Martínez-Pastor, Claude Delalande, Ph. Roussignol, T. Lebihen, Emmanuelle Deleporte, Arianna Filoramo, G. Martinez
Publikováno v:
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4d3573cea90271af538d39dc07e91ac5
https://doi.org/10.1103/physrevb.55.9915
https://doi.org/10.1103/physrevb.55.9915
Publikováno v:
Thin Solid Films. 276:47-50
Luminescence and Raman scattering experiments have been performed on different types of porous silicon (PS) samples as a function of hydrostatic pressure. These measurements allow one to compare the response of the material in different structural ph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f56413c6715d9fcddec3ad57d9e3702c
https://doi.org/10.1016/0040-6090(95)08068-6
https://doi.org/10.1016/0040-6090(95)08068-6
Publikováno v:
Solid State Communications. 96:503-506
Luminescence and Raman scattering experiments have been performed on different types of porous silicon (PS) samples as a function of the hydrostatic pressure. These measurements allow to compare the response of the material in different structural ph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::845f5c802427aeed45ca83b1329101c6
https://doi.org/10.1016/0038-1098(95)00426-2
https://doi.org/10.1016/0038-1098(95)00426-2
Publikováno v:
Journal of Physics and Chemistry of Solids. 56:635-638
Raman scattering experiments performed on GaAs:Si as a function of hydrostatic pressure in the indirect-gap range 4–9 GPa, reveal the bistable character of the related impurity level under optical illumination. A numerical simulation of our results
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c7b206f85974074da6d770237b45e86
https://doi.org/10.1016/0022-3697(94)00256-8
https://doi.org/10.1016/0022-3697(94)00256-8
Publikováno v:
Journal of Physics and Chemistry of Solids. 56:655-661
Recent high pressure measurements on different types of porous silicon (PS) samples have provided very interesting information on the variation and the stability of the related visible luminescence. It is shown that this luminescence still exists in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c16df6defdb18c39e7fdabe1553e290
https://doi.org/10.1016/0022-3697(94)00259-2
https://doi.org/10.1016/0022-3697(94)00259-2
Publikováno v:
Thin Solid Films. 255:35-38
The luminescence and Raman spectra of porous silicon have been studied at room temperature as a function of hydrostatic pressure up to 15 GPa. The luminescence is still observed in the high pressure metallic phase, showing that it is not related to t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79d24da9af2c62dc54e1584a7da88bf6
https://doi.org/10.1016/0040-6090(94)05625-n
https://doi.org/10.1016/0040-6090(94)05625-n
Publikováno v:
Europhysics Letters (EPL). 26:625-630
The luminescence and Raman spectra of porous silicon have been investigated at room temperature as a function of hydrostatic pressure up to 15 GPa. In the high-pressure metallic phase the luminescence is still observed showing that it is not related
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a771bd734b9a4a8e8624f30f6adc0c9
https://doi.org/10.1209/0295-5075/26/8/012
https://doi.org/10.1209/0295-5075/26/8/012
Publikováno v:
Physical Review B
Physical Review B, 1993, 47 (24), pp.16643-16646. ⟨10.1103/PhysRevB.47.16643⟩
Physical Review B, 1993, 47 (24), pp.16643-16646. ⟨10.1103/PhysRevB.47.16643⟩
Carrier tunneling through (Cd,Zn)Te barriers of different thicknesses is investigated in CdTe/Cd,Zn)Te asymmetric double quantum wells by use of time-resolved photoluminescence and steady-state photoluminescence excitation experiments. The strong dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::961827df9534b8d0dac4a9c6b129b3be
https://doi.org/10.1103/physrevb.47.16643
https://doi.org/10.1103/physrevb.47.16643
Publikováno v:
Semiconductor Science and Technology
Semiconductor Science and Technology, 1991, 6 (6), pp.454-460. ⟨10.1088/0268-1242/6/6/007⟩
Semiconductor Science and Technology, 1991, 6 (6), pp.454-460. ⟨10.1088/0268-1242/6/6/007⟩
The photoluminescence of CdTe/Cd1-xZnxTe (x approximately=0.1) strained-layer heterostructures has been studied at 1.8 K as a function of hydrostatic pressure up to 2.7 GPa. The pressure dependence of transitions related to the substrate has been mea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cf0f83c41066e16f1a566d4181f78162
https://doi.org/10.1088/0268-1242/6/6/007
https://doi.org/10.1088/0268-1242/6/6/007
Publikováno v:
Materials Science Forum. :1097-1102
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a48d6002764a0bd8cab9978b540c237
https://doi.org/10.4028/www.scientific.net/msf.38-41.1097
https://doi.org/10.4028/www.scientific.net/msf.38-41.1097