Zobrazeno 1 - 10
of 26
pro vyhledávání: '"M. Zerarka"'
Publikováno v:
2021 21th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2491f09722c7f2059a08900ef0a29ab2
https://doi.org/10.1109/radecs53308.2021.9954574
https://doi.org/10.1109/radecs53308.2021.9954574
Autor:
Antoine Touboul, O. Crepel, Vincent Pouget, G. Bascoul, M. Matmat, C. Ngom, M. Zerarka, Fabio Coccetti, S. Jonathas
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2021, 68 (8), pp.1642-1650. ⟨10.1109/TNS.2021.3081485⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2021, 68 (8), pp.1642-1650. ⟨10.1109/TNS.2021.3081485⟩
International audience; We present backside laser testing of GaN power devices on Si substrate using optical parameters compatible with three-photon absorption in GaN and single-photon absorption in the substrate. The laser/device interaction is desc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f3916e66571fb10205b65e340e13aa58
https://hal.archives-ouvertes.fr/hal-03428144
https://hal.archives-ouvertes.fr/hal-03428144
Autor:
M. Zerarka, O. Crepel, C. Weulersse, S. Morand, C. Binois, M. Mazurek, G. Vignon, L. Serrano, F. Coccetti
Publikováno v:
2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0b21b84f20ffda5cb29af6bdc66c8be
https://doi.org/10.1109/radecs50773.2020.9857695
https://doi.org/10.1109/radecs50773.2020.9857695
Publikováno v:
Microelectronics Reliability. 126:114339
This paper presents the numerical evaluation of different multiphotonic absorption mechanisms to be used for backside laser testing of single-event effects in GaN-on-Si HEMTs. The optical transmission through the complete stack of layers of three com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0012e4f182a0fc8657f198d813174dff
https://doi.org/10.1016/j.microrel.2021.114339
https://doi.org/10.1016/j.microrel.2021.114339
Akademický článek
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Autor:
Raymond Aschheim, Mohamed Ikbal Benakila, Sébastien Bindel, Frédéric Drouhin, Smain Femmam, Laurent George, Marc Gilg, Xiaoting Li, Faouzi M. Zerarka
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::136a52325f653114cc1a52fab8cb7137
https://doi.org/10.1016/b978-1-78548-274-8.50011-8
https://doi.org/10.1016/b978-1-78548-274-8.50011-8
Autor:
Smain Femmam, Faouzi M. Zerarka
Let G and H be two simple undirected graphs. An embedding of the graph G into the graph H is an injective mapping f from the vertices of G to the vertices of H. The study of graph embedding arises naturally in a number of computational problems: port
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8471efd40c4e06dd3f5868b11a5e4a70
https://doi.org/10.1016/b978-1-78548-274-8.50006-4
https://doi.org/10.1016/b978-1-78548-274-8.50006-4
Publikováno v:
IEEE Transactions on Electron Devices. 59:3482-3488
Two-dimensional numerical simulations have been performed to define the sensitive volume and triggering criteria of single-event burnouts (SEBs) for standard and superjunction MOSFETs and planar and trench IGBTs for different configurations of ionizi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15f778c5a9a334d1da90997c2e073656
https://doi.org/10.1109/ted.2012.2222889
https://doi.org/10.1109/ted.2012.2222889
Publikováno v:
CAS 2011 Proceedings (2011 International Semiconductor Conference).
Single-Event-Burnout (SEB) is a catastrophic failure mode in power semiconductor devices triggered by cosmic ray heavy ions. Thus, it is essential to improve the robustness of these devices under this environment. In this paper a new design of planar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9484883e466f60dabfe94f995040696
https://doi.org/10.1109/smicnd.2011.6095800
https://doi.org/10.1109/smicnd.2011.6095800
Akademický článek
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