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pro vyhledávání: '"M. Zbroszczyk"'
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Publikováno v:
Optical and Quantum Electronics. 36:443-457
Threshold current and differential quantum efficiency of broad contact lasers with asymmetric facet reflectivity are discussed with the purpose to reveal factors essential for optimisation of the wall-plug efficiency of such lasers. Lasers with low f
Autor:
J. Ratajczak, J. Kątcki, M. Zbroszczyk, J.M. Kubica, K. Regiński, Maciej Bugajski, Jan Muszalski, Tomasz J. Ochalski
Publikováno v:
Scopus-Elsevier
We discuss some problems of molecular beam technology (MBE) technology of planar microcavities based on GaAs, AlGaAs and InGaAs compounds. This technology needs specific methods of in situ control and postgrowth characterization. One of the crucial p
Autor:
M. Zbroszczyk, Leszek Adamowicz
Publikováno v:
Surface Science. :247-250
The self-consistent Green's function technique for surface and interfaces is applied to semi-infinite crystals of various III–V semiconductors in the tight-binding LMTO-ASA scheme. We have studied the deposition of metallic and nonmetallic full mon
Autor:
M. Zbroszczyk, Leszek Adamowicz
Publikováno v:
Surface Science. :730-733
The self-consistent Green's function technique for surface and interfaces is applied to a semi-infinite perfect crystal of GaAs with various surface orientations. Charge densities for surface atoms are calculated. The surface energies and work functi
Autor:
P Kocinski, M Zbroszczyk
Publikováno v:
Semiconductor Science and Technology. 10:1452-1457
The structural and electronic properties of the zinc-blende, beta -Sn and rock-salt phases of BP are calculated within the local-density approximation. Two competing methods-LMTO and the pseudopotential plane-wave method-have been used. The agreement
Autor:
K. Regiński, M. Zbroszczyk, T. Piwoński, J.M. Kubica, Maciej Bugajski, P. Sajewicz, B. Mroziewicz
Publikováno v:
Microwave and Optical Technology Letters. 29:75-77
The operation in the 1020 nm wavelength range of strained-layer InGaAs/GaAs separate-confinement-heterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 A thick InGaAs quantum well with an indium
Publikováno v:
LEOS 2000. 2000 IEEE Annual Meeting Conference Proceedings. 13th Annual Meeting. IEEE Lasers and Electro-Optics Society 2000 Annual Meeting (Cat. No.00CH37080).
In this paper, we report development of an equivalent-circuit electrical-thermal-optical (ETO) model for VCSELs suitable for coupling to package-level thermo-mechanical CAD software using Analogy's Saber state-of-the-art circuit simulator platform as
Autor:
J. Kątcki, Jan Muszalski, J.M. Kubica, Maciej Bugajski, Tomasz J. Ochalski, M. Zbroszczyk, K. Regiński
Publikováno v:
Optical Properties of Semiconductor Nanostructures ISBN: 9780792363170
ResearcherID
ResearcherID
Spontaneous emission control has been achieved in InxGa1-xAs/GaAs planar microcavities with DBR reflectors. The room temperature emission in λ-sized cavities is enhanced compared to its free space value whilst in λ/2-sized cavities suppression of s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b5372e34ca7835b8777e38e333c9c905
https://doi.org/10.1007/978-94-011-4158-1_22
https://doi.org/10.1007/978-94-011-4158-1_22
Akademický článek
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