Zobrazeno 1 - 10
of 28
pro vyhledávání: '"M. Zahangir Kabir"'
Autor:
M. Zahangir Kabir
Publikováno v:
Radiation, Vol 2, Iss 1, Pp 91-99 (2022)
The effects of charge carrier trapping on image resolution in multilayer photoconductive imaging detectors was analyzed by developing an analytical model for calculating the modulation transfer function (MTF) of the imaging detectors. The MTF model w
Externí odkaz:
https://doaj.org/article/366a1e824b9c466489fb8bbe06ca2af5
Autor:
M. Zahangir Kabir
Publikováno v:
Energies, Vol 14, Iss 13, p 3868 (2021)
A physics-based compact analytical model for studying the current–voltage characteristics of perovskite solar cells has been proposed by considering the external voltage-dependent carrier transport, exponential photon absorption, and bulk charge ca
Externí odkaz:
https://doaj.org/article/bcf8b00927e04605a1c8869370b9c950
Autor:
M. Zahangir Kabir
Publikováno v:
Photoconductivity and Photoconductive Materials. :613-641
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da25e5f421f1ac7677941d42a9ab2202
https://doi.org/10.1002/9781119579182.ch15
https://doi.org/10.1002/9781119579182.ch15
Autor:
M. Zahangir Kabir
Publikováno v:
Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors ISBN: 9783031239991
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfcd31cc6290f91a902c90c6b148c5d2
https://doi.org/10.1007/978-3-031-24000-3_1
https://doi.org/10.1007/978-3-031-24000-3_1
Publikováno v:
Medical Imaging 2022: Physics of Medical Imaging.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b90615fc474741b84fffb4de6e8b8fc
https://doi.org/10.1117/12.2613030
https://doi.org/10.1117/12.2613030
Publikováno v:
IEEE Transactions on Electron Devices. 67:633-639
We demonstrate the use of pulse-height spectroscopy (PHS) to extract the internal electric field of an amorphous-selenium (a-Se) detector having a polyimide (PI) blocking layer. PHS enables more accurate measurement of the internal electric field of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10bc11fd2642bcf8818c9a033c680d6c
https://doi.org/10.1109/ted.2019.2958789
https://doi.org/10.1109/ted.2019.2958789
Publikováno v:
IEEE Transactions on Electron Devices. 63:704-709
The photocurrent and the lag signals in amorphous selenium (a-Se) detectors have been characterized by measuring the optical and residual currents under varying light intensity, applied electric field, and temperature. A mathematical model for the tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::244ac39e344bd3925d7f4a915c1aaba3
https://doi.org/10.1109/ted.2015.2508672
https://doi.org/10.1109/ted.2015.2508672
Autor:
M. Zahangir Kabir, Safa Kasap
Publikováno v:
Springer Handbook of Electronic and Photonic Materials ISBN: 9783319489315
Modern flat-panel x-ray imaging detectors have played an important role in the transition from analog to digital x-ray imaging. They capture an x-ray image electronically and hence enable a clinical transition to digital radiography. This chapter cri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b745acd1ed83a383ecbdb1f029a92a15
https://doi.org/10.1007/978-3-319-48933-9_45
https://doi.org/10.1007/978-3-319-48933-9_45
Autor:
M. Zahangir Kabir, Safayat Al Imam
Publikováno v:
Canadian Journal of Physics. 92:641-644
The density of defect states near the valence band of the hole blocking layer (commonly called the n-layer) is determined by analyzing the transient dark current behavior of multilayer amorphous selenium (a-Se) X-ray image detectors. The previous tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d827a474911cfe0dcc07c866220c1078
https://doi.org/10.1139/cjp-2013-0536
https://doi.org/10.1139/cjp-2013-0536
Autor:
M. Zahangir Kabir, Olivier Tousignant, Safa Kasap, Philippe-Aubert Gauthier, Habib Mani, M. Yunus
Publikováno v:
Current Applied Physics. 6:393-398
A model explaining the ghosting mechanisms in amorphous selenium based X-ray image detectors is described by considering deep trapping of charge carriers, trapped charges arising from previous exposures, trap filling effects, recombination between dr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c68d08af21be342ea212626af83d6e8
https://doi.org/10.1016/j.cap.2005.11.026
https://doi.org/10.1016/j.cap.2005.11.026