Výsledky vyhledávání - "M. Z. Kovalyuk"

Fabrication and characterization of photosensitive n-ZnO/p-InSe heterojunctions

Autor: B. V. Kushnir, V. V. Netyaga, M. Z. Kovalyuk, V. V. Khomyak, V. N. Katerynchuk, Zakhar R. Kudrynskyi

Publikováno v: Thin Solid Films. 582:253-257

Indium monochalcogenide (InSe) with a band gap of 1.25 eV is a promising material for photovoltaic applications. In this work, photosensitive anisotype n-ZnO/p-InSe heterojunctions were fabricated by means of radio-frequency magnetron sputtering of t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5f82b8ae3067bf7e91b8207bb0d8937c
https://doi.org/10.1016/j.tsf.2014.11.015

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Controlled synthesis and characterization of highly ordered core-shell nickel-carbon nanoparticle arrays on the van der Waals surfaces of layered semiconductor crystals

Autor: V. V. Vishniak, A. P. Bakhtinov, O. S. Lytvyn, Zakhar R. Kudrynskyi, V. M. Vodopyanov, M. Z. Kovalyuk, V. V. Netyaga, V. L. Karbivskyy

Publikováno v: physica status solidi (a). 211:342-350

Self-assembled core–shell Ni–C nanoparticles (NPs) with nearly uniform sizes were grown on the van der Waals (0001) surfaces of GaSe layered crystals. The metal NPs encapsulated within graphite shells (Ni@C) with the sizes ranging from a few to 1

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2e794113a4d5fc8527aaee4b9fa7e630
https://doi.org/10.1002/pssa.201330081

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Films of degenerate intrinsic oxides of InSe and In4Se3 semiconductor crystals

Autor: V. M. Katerynchuk, M. Z. Kovalyuk

Publikováno v: Semiconductors. 44:1176-1179

The results of investigation of electric properties of oxide-p-InSe and oxide-p-In4Se3 heterojunctions, the front layer in which is obtained by the thermal oxidation of crystalline substrates, are presented. It is established that the forward portion

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::49ba48d4705308a8dd1930a8af40665f
https://doi.org/10.1134/s1063782610090125

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Influence of Intercalation on The Electrophysical Properties of Layered Semiconductors Bi2Te3 and InSe

Autor: V. A. Kulbachinskii, M. N. Pyrlya, M. Z. Kovalyuk

Publikováno v: Molecular Crystals and Liquid Crystals Science and Technology. Section A. Molecular Crystals and Liquid Crystals. 245:49-54

The Li and Ba atoms were intercalated into the van der Waals gaps of Bi 2 Te 3 , solid solutions based on Bi 2 Te 3 and β-polytype of InSe single crystals of nand p-types. The temperature dependence of resistivity, the Hall effect and the Shubnikov-

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a64cc9a72f67cd99a7e8deaad5205196
https://doi.org/10.1080/10587259408051665

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InSe p-n Homojunction Diodes

Autor: M. Z. Kovalyuk, V. N. Katerinchuk

Publikováno v: Physica Status Solidi (a). 133:K45-K48

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::270f55a36f4d66f7b0f8740354894280
https://doi.org/10.1002/pssa.2211330128

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Gallium telluride heterojunctions

Autor: M. Z. Kovalyuk, V. N. Katerinchuk

Publikováno v: Technical Physics Letters. 25:54-55

The photoelectric properties of In2O3-GaTe and GaTe-InSe heterojunctions were investigated. Their characteristics were described using a diffusion model of the heterojunction. Some deviation of the characteristics from ideal was observed for In2O3-Ga

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5e81ef2940d403dc79d4ddbb72db2341
https://doi.org/10.1134/1.1262353

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Photosensitive oxide—p-In4Se3 heterostructures

Autor: M. Z. Kovalyuk, A. D. Ogorodnik, V. N. Katerinchuk

Publikováno v: Physica Status Solidi (a). 148:K75-K76

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::02637e13b6ccd6224be28ecacae44b6d
https://doi.org/10.1002/pssa.2211480237

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Photopleochroism of oxide-p-InSe diode structures

Autor: V. N. Katerinchuk, M. Z. Kovalyuk

Publikováno v: Technical Physics Letters. 23:377-377

A layered InSe crystal is used to fabricate a polarimetric photodetector. The heterostructure is formed in the plane perpendicular to the cleavage plane of the layers by thermal oxidation of the crystal substrate. The coefficient of photopleochroism

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d21dc5698b5926065f15738c2fcd605b
https://doi.org/10.1134/1.1261674

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p-GaSe-n-Ga2S3 heterojunctions

Autor: V. I. Vitkovskaya, M. Z. Kovalyuk, M. V. Tovarnitskii

Publikováno v: Technical Physics Letters. 23:385-385

Epitaxial layers of n-Ga2S3 have been grown on p-GaSe single crystals annealed in sulfur vapor. The possibility of fabricating p-GaSe-n-Ga2S3 heterojunctions is demonstrated.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cf499b3e017fefbc4a1351306ae9c354
https://doi.org/10.1134/1.1261689

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