Zobrazeno 1 - 10
of 54
pro vyhledávání: '"M. Yuabov"'
Publikováno v:
physica status solidi (a). 118:577-589
The current–voltage (CVC) and spectral characteristics of photocurrent in thin-film a-Si:H p–i–n photocells are investigated theoretically and experimentally without and under action of reverse and forward bias voltages and analysed with weak a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98077021ce1a20d1a3c18ed0197303ed
https://doi.org/10.1002/pssa.2211180231
https://doi.org/10.1002/pssa.2211180231
Transient Processes of Current Reversal in MIS Structures with Majority and Minority Charge Carriers
Publikováno v:
physica status solidi (a). 73:K179-K183
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::858e61f9db5ce6ad8a4bcbbd0015503b
https://doi.org/10.1002/pssa.2210730251
https://doi.org/10.1002/pssa.2210730251
Publikováno v:
physica status solidi (a). 95:337-342
The influence of a surface inversion layer in MIS structures with a tunnel-thin insulator of such characteristics as the height of the potential barrier and the width of the space charge region, is theoretically studied using the approximation of a c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57fad349b1d672dfed674594194795a6
https://doi.org/10.1002/pssa.2210950142
https://doi.org/10.1002/pssa.2210950142
Publikováno v:
Physica Status Solidi (a). 109:211-216
An investigation is made of p—i—n and p+—i—p+ structures of hydrogenated amorphous silicon with various contents of monosilane (SiH4) mixed with argon. The short-circuit current (Isc) and open-circuit voltage (Uoc) in dependence on the illumi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47cea1a9f75f637a8780c296fe92160d
https://doi.org/10.1002/pssa.2211090122
https://doi.org/10.1002/pssa.2211090122
Publikováno v:
Physica Status Solidi (a). 6:311-322
Current—voltage, current—capacitance, photosensitivity, temperature, and spectral characteristics of SnO2n-CdSp-CdTeMe thin film structures have been investigated. The experimental results are explained by electron processes taking place in n-CdS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4874231d229044a27cd0abcc43fb840d
https://doi.org/10.1002/pssa.2210060136
https://doi.org/10.1002/pssa.2210060136
Publikováno v:
physica status solidi (a). 93:K219-K221
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b45138e9942046a477630f5df8485e5
https://doi.org/10.1002/pssa.2210930265
https://doi.org/10.1002/pssa.2210930265
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