Zobrazeno 1 - 3
of 3
pro vyhledávání: '"M. Yu. Tolotaev"'
Publikováno v:
Physics of the Solid State. 49:865-867
Weak magnetic fields with an induction B = 0.28 T are found to have an effect on the transformation of subsystems of structural (intrinsic and radiation-induced) silicon defects under irradiation with a low-intensity flux of beta particles (I = 105 c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f847e3db56e86f706aab868f789f7e11
https://doi.org/10.1134/s1063783407050101
https://doi.org/10.1134/s1063783407050101
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 1:204-206
It is shown that nonequilibrium point defects are of primary importance in the changes in the silicon microhardness induced by a low-intensity (I ∼ 105 cm−2 s−1) electron beam. It is found that the necessary condition for softening under low-in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e9586108d94fb9e943d6b5627b2c464
https://doi.org/10.1134/s1027451007020176
https://doi.org/10.1134/s1027451007020176
Autor:
I. V. Blokhin, N. Yu. Suchkova, M. V. Badylevich, A. A. Dmitrievskiĭ, S. V. Kartsev, Yu. I. Golovin, M. Yu. Tolotaev
Publikováno v:
Semiconductors. 40:1375-1377
Deep-level transient spectroscopy is used to study the dependence of the concentration of the donor-and acceptor-type radiation defects in silicon on the duration of irradiation with low-intensity fluxes of β particles (I ≈ 9 × 105 cm−2 s−1).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30409415ca35f18a8ea0c8a3cd120ee4
https://doi.org/10.1134/s1063782606120013
https://doi.org/10.1134/s1063782606120013