Výsledky vyhledávání - "M. Yu. Pogorel'skiĭ"

Multilayer AIN/AlGaN/GaN/AlGaN heterostructures with quantum wells for high-power field-effect transistors grown by ammonia MBE

Autor: S. B. Aleksandrov, M. V. Stepanov, Yu. V. Pogorel’skiĭ, M. Yu. Pogorel’skiĭ, L. É. Velikovskiĭ, I. É. Velikovskiĭ, S. I. Petrov, A. P. Shkurko, M. A. Sokolov, A. É. Byrnaz, D. M. Krasovitskiĭ, M. V. Pavlenko, A. V. Veretekha, A. N. Alekseev, V. P. Chalyĭ, A. G. Tkachenko, I. A. Sokolov

Publikováno v: Technical Physics Letters. 32:960-963

High-power field-effect transistors (FETs) are among the main applications of heterostructures based on group III metal nitrides, which in most cases implement the classical GaN/AlGaN structure with a single junction. An alternative approach based on

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e8c7ed44bc2407c764780f3166f78d63
https://doi.org/10.1134/s1063785006110162

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Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE on silicon substrates

Autor: I. A. Sokolov, M. V. Pavlenko, M. A. Sokolov, A. N. Alekseev, L. É. Velikovskiĭ, D. M. Krasovitskiĭ, A. P. Shkurko, S. B. Aleksandrov, S. I. Petrov, M. Yu. Pogorel’skiĭ, M. V. Stepanov, A. É. Byrnaz, A. G. Tkachenko, Yu. V. Pogorel’skiĭ, I. É. Velikovskiĭ, V. P. Chalyĭ

Publikováno v: Technical Physics Letters. 34:300-302

We report preliminary results on the transfer of the ammonia MBE technology of AlN/AlGaN/GaN/AlGaN heterostructures to silicon substrates. Optimization of the growth conditions allowed the number of macroscopic cracks in the epilayers to be reduced a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::59cc19c68ba9de32cf581a028992a21e
https://doi.org/10.1134/s1063785008040093

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