Zobrazeno 1 - 10
of 29
pro vyhledávání: '"M. Yu. Melnikov"'
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-6 (2023)
Abstract The effective mass at the Fermi level is measured in the strongly interacting two-dimensional (2D) electron system in ultra-clean SiGe/Si/SiGe quantum wells in the low-temperature limit in tilted magnetic fields. At low electron densities, t
Externí odkaz:
https://doaj.org/article/935d3eea224548a2b6d2453420162f70
Autor:
A. A. Shashkin, M. Yu. Melnikov, V. T. Dolgopolov, M. M. Radonjić, V. Dobrosavljević, S.-H. Huang, C. W. Liu, Amy Y. X. Zhu, S. V. Kravchenko
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-7 (2022)
Abstract The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting two-dimensi
Externí odkaz:
https://doaj.org/article/15e6163bb86d475396cc295da24b899b
Publikováno v:
Разработка и регистрация лекарственных средств, Vol 0, Iss 2, Pp 140-145 (2019)
The article presents data on the development of a technique of photometric determination of ferric chloride (III) as a hemostatic tool, through the formation of salicylates iron. The developed method was validated for following validation characteris
Externí odkaz:
https://doaj.org/article/a5ccbd7ddc6d4ea1a21bfa5a907d9c3a
Publikováno v:
Разработка и регистрация лекарственных средств, Vol 0, Iss 1, Pp 76-83 (2019)
The article describes a method for quantitative determination of aminocaproic acid in a multi-component hemostatic medical agent having the local effect. The analysis uses the method of direct spectrophotometry with the wavelength of 568 nm. Based on
Externí odkaz:
https://doaj.org/article/31ddeeff4745469cb10ac170300388e1
Autor:
M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, Amy Y. X. Zhu, S. V. Kravchenko, S.-H. Huang, C. W. Liu
Publikováno v:
Physical Review B. 107
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41a377be314051153198278baef8a3fc
https://doi.org/10.1103/physrevb.107.039902
https://doi.org/10.1103/physrevb.107.039902
Autor:
A. A. Shashkin, M. Yu. Melnikov, V. T. Dolgopolov, M. M. Radonjić, V. Dobrosavljević, S.-H. Huang, C. W. Liu, Amy Y. X. Zhu, S. V. Kravchenko
The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting two-dimensional elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::05f6c2a1da04880826fedd467ffdb76c
http://arxiv.org/abs/2106.05927
http://arxiv.org/abs/2106.05927
Autor:
V. T. Dolgopolov, A. A. Shashkin, Chieh-I Liu, S.-H. Huang, S. V. Kravchenko, M. Yu. Melnikov
We observe minima of the longitudinal resistance corresponding to the quantum Hall effect of composite fermions at quantum numbers $p=1$, 2, 3, 4, and 6 in an ultraclean strongly interacting bivalley SiGe/Si/SiGe two-dimensional electron system. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::822e7b706ea498f683f6cc8b49e3ba3d
Autor:
V. T. Dolgopolov, S. V. Kravchenko, A. A. Shashkin, M. Yu. Melnikov, Vladimir Dobrosavljevic, Chieh-I Liu, S.-H. Huang, Amy Y. X. Zhu, M. M. Radonjić
We observe that in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells, the resistivity on the metallic side near the metal-insulator transition increases with decreasing temperature, reaches a maximum at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::82380f8e62ff3888ddacccb182cf28c6
http://arxiv.org/abs/2004.14968
http://arxiv.org/abs/2004.14968
Autor:
S.-H. Huang, Amy Y. X. Zhu, M. Yu. Melnikov, A. A. Shashkin, S. V. Kravchenko, V. T. Dolgopolov, Chee-Wee Liu
Publikováno v:
Physical Review B. 101
We have studied the strongly interacting, two-valley two-dimensional (2D) electron system in ultrahigh mobility SiGe/Si/SiGe quantum wells in parallel magnetic fields strong enough to completely polarize the electron spins thus making the electron sy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::80c7b1d9ecf6e07946ab7ec1572fda99
https://doi.org/10.1103/physrevb.101.045302
https://doi.org/10.1103/physrevb.101.045302
Autor:
V. T. Dolgopolov, A. A. Shashkin, S.-H. Huang, M. Yu. Melnikov, Chee-Wee Liu, S. V. Kravchenko
Publikováno v:
JETP Letters. 107:794-797
We have experimentally studied the fractional quantum Hall effect (FQHE) in SiGe/Si/SiGe quantum wells in relatively weak magnetic fields, where the Coulomb interaction between electrons exceeds the cyclotron splitting by a factor of a few XX. Minima
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1a13f2c5bc3b0e08c3ad0edd76d481be
https://doi.org/10.1134/s0021364018120019
https://doi.org/10.1134/s0021364018120019