Výsledky vyhledávání - "M. Yoshitani"

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InN/GaN SQW and DH structures grown by radio frequency plasma‐assisted MBE

Autor: Kouichirou Akasaka, Takayuki Ohkubo, Wataru Terashima, Song-Bek Che, Yoshihiro Ishitani, M. Yoshitani, Naoki Hashimoto, Akihiko Yoshikawa

Publikováno v: physica status solidi (c). 2:2258-2262

We studied the fabrication of InN/GaN single-quantum well (SQW) and double hetero (DH) structures by the radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) system with in-situ monitoring of spectroscopic ellipsometry (SE) and reflection

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1770b17205ea7e2d0f8dfb2c33c67e62
https://doi.org/10.1002/pssc.200461437

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Bandgap energy of InN and its temperature dependence

Autor: M. Yoshitani, Wataru Terashima, Song-Bek Che, Yoshihiro Ishitani, H. Masuyama, Akihiko Yoshikawa, Naoki Hashimoto

Publikováno v: physica status solidi (c). 2:2276-2280

InN crystals are grown on sapphire substrates by a plasma assisted MBE system. The carrier concentration of the samples are 2 × 1018−1 × 1019 cm–3. Optical transmission and reflectance measurements are performed on these samples in a temperatur

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::56510d391e42c417318e4340ca5b7b40
https://doi.org/10.1002/pssc.200461433

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Properties of the fundamental absorption edge of InN crystals investigated by optical reflection and transmission spectra

Autor: Koichiro Akasaka, Wataru Terashima, M. Yoshitani, Naoki Hashimoto, Ke Xu, Yoshihiro Ishitani, H. Masuyama, Takahiro Ohkubo, A. Yoshikawa, S. B. Che

Publikováno v: physica status solidi (b). 241:2849-2853

InN crystals are grown on sapphire substrates using a plasma-assisted MBE system. The carrier concentrations of the samples are 2 × 10 18-1 x 10 19 cm -3 . Optical transmission and reflectance measurements are performed on these samples in the tempe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::da4af4d6e07e79bce884c56fa4f1cc2f
https://doi.org/10.1002/pssb.200405097

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Comparative study of InN growth on Ga‐ and N‐polarity GaN templates by molecular‐beam epitaxy

Autor: Yoshihiro Ishitani, Ke Xu, Akihiko Yoshikawa, Wataru Terashima, B. Cao, Naoki Hashimoto, T. Hata, M. Yoshitani

Publikováno v: physica status solidi (c). :2814-2817

Molecular-beam epitaxial growth of InN was investigated on Ga- and N-polar GaN templates. It was found that InN layers could be grown at higher temperature on N-polar GaN than on Ga-polar one, on which InN films succeeded the cation- or anion-polarit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::87b2913d9b3436ec7fdcdb0a6ab45a11
https://doi.org/10.1002/pssc.200303456

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High‐quality and thick InN films grown on 2‐inch sapphire substrate by molecular‐beam epitaxy

Autor: Ke Xu, T. Hata, Yoshihiro Ishitani, Akihiko Yoshikawa, M. Yoshitani, Wataru Terashima, Naoki Hashimoto, B. Cao

Publikováno v: physica status solidi (c). :2790-2793

InN growth on 2-inch sapphire (0001) with thickness up to 5 μm was demonstrated by radio-frequency plasma-assisted molecular beam epitaxy (rf-MBE). The surfaces of the 2-inch samples were mirror-like and atomic growth steps were observed in large ar

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5a09bf45cc1f65cae389eff3fbed0af3
https://doi.org/10.1002/pssc.200303269

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Infrared measurements of InN films at low temperatures

Autor: T. Hata, Yoshihiro Ishitani, Wataru Terashima, Ke Xu, Akihiko Yoshikawa, M. Yoshitani, Naoki Hashimoto

Publikováno v: physica status solidi (c). :2838-2841

InN crystals with the electron concentration Ne of 4–11 × 1018 cm−3 are grown on sapphire substrates by molecular beam epitaxy. Optical reflectance and transmission measurements are performed in a temperature range of 5 to 296 K. The reflectance

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d6a25bc7aebe184285ad2b84756edf7e
https://doi.org/10.1002/pssc.200303400

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Akademický článek

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GaN-MOVPE growth and its microscopic chemistry of gaseous phase by computational thermodynamic analysis

Autor: Y. Nishikawa, M. Nishibayashi, Akira Hirako, M. Yoshitani, Kazuhiro Ohkawa

Publikováno v: Journal of Crystal Growth. :931-935

We studied microscopic chemistry of gaseous phase in GaN growth by computational thermodynamic analysis of metalorganic vapor phase epitaxy with two- and three-flow methods. Correlations between quality of GaN layers and gaseous phase chemistry were

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0e3f5714004e3f48793163f81dfd5300
https://doi.org/10.1016/s0022-0248(01)01999-6

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