Zobrazeno 1 - 7
of 7
pro vyhledávání: '"M. Ya. Chernykh"'
Autor:
I. S. Ezubchenko, M. Ya. Chernykh, P. A. Perminov, J. V. Grishchenko, I. N. Trun’kin, I. A. Chernykh, M. L. Zanaveskin
Publikováno v:
Technical Physics Letters. 47:705-708
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2748726a8ca5e76fde607c7bb2015f2
https://doi.org/10.1134/s1063785021070208
https://doi.org/10.1134/s1063785021070208
Autor:
M. L. Zanaveskin, I. A. Chernykh, M. Ya. Chernykh, I. N. Trunkin, I. S. Ezubchenko, I. O. Mayboroda
Publikováno v:
Crystallography Reports. 65:122-125
The effect of trimethylaluminum preflow time on the crystalline quality of AlN films grown by metalorganic chemical vapor deposition on Si(111) substrates has been investigated. It is found that semipolar (10$$\bar {1}$$1) layers are formed in the Al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5261105a2a82c64d33ce078aa246dc4d
https://doi.org/10.1134/s1063774520010071
https://doi.org/10.1134/s1063774520010071
Autor:
I. S. Ezubchenko, I. O. Maiboroda, Yu. V. Grishchenko, I. A. Chernykh, M. Ya. Chernykh, M. L. Zanaveskin, A. A. Andreev, E. M. Kolobkova
Publikováno v:
Technical Physics Letters. 45:173-175
Ammonia molecular-beam epitaxy has been used to grow gallium nitride (GaN) transistor heterostructures on sapphire and silicon substrates. GaN transistors with a 1.2-mm periphery fabricated on substrates of both types exhibited similar high static ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfeb67e955df6c5add44fecb58f10874
https://doi.org/10.1134/s1063785019020238
https://doi.org/10.1134/s1063785019020238
Autor:
Andreev, A. A.1 (AUTHOR) andreev_aa@nrcki.ru, Grishchenko, Yu. V.1 (AUTHOR), Ezubchenko, I. S.1 (AUTHOR), Chernykh, M. Ya.1 (AUTHOR), Kolobkova, E. M.1 (AUTHOR), Maiboroda, I. O.1 (AUTHOR), Chernykh, I. A.1 (AUTHOR), Zanaveskin, M. L.1 (AUTHOR)
Publikováno v:
Technical Physics Letters. Feb2019, Vol. 45 Issue 2, p173-175. 3p.
Autor:
Guschina, N. V.1 (AUTHOR) guscha@rambler.ru, Voronin, V. I.2 (AUTHOR), Proskurnina, N. V.2 (AUTHOR), Bobrovskii, V. I.2 (AUTHOR), Shalomov, K. V.1 (AUTHOR), Ovchinnikov, V. V.1 (AUTHOR)
Publikováno v:
Russian Physics Journal. May2022, Vol. 65 Issue 1, p123-130. 8p.
Autor:
Ezubchenko, I. S.1 (AUTHOR) ezivan9@gmail.com, Chernykh, M. Ya.1 (AUTHOR), Perminov, P. A.1 (AUTHOR), Grishchenko, J. V.1 (AUTHOR), Trun'kin, I. N.1 (AUTHOR), Chernykh, I. A.1 (AUTHOR), Zanaveskin, M. L.1 (AUTHOR)
Publikováno v:
Technical Physics Letters. Oct2021, Vol. 47 Issue 10, p705-708. 4p.
Autor:
Ezubchenko, I. S.1 (AUTHOR) ezivan9@gmail.com, Chernykh, M. Ya.1 (AUTHOR), Mayboroda, I. O.1 (AUTHOR), Trun'kin, I. N.1 (AUTHOR), Chernykh, I. A.1 (AUTHOR), Zanaveskin, M. L.1 (AUTHOR)
Publikováno v:
Crystallography Reports. Jan2020, Vol. 65 Issue 1, p122-125. 4p.